ST BAT54 User Manual
Features
■ Low conduction and reverse losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ Extremely fast switching
■ Surface mount device
■ Low capacitance diode
Description
The BAT54 series uses 40 V Schottky barrier
diodes packaged in SOD- 23, SOD-323,
SOD-523, SOT-23, SOT-323, or SOT-666.
BAT54
Small signal Schottky diodes
BAT54ZFILM
(Single)
SOD-123
BAT54JFILM
BAT54JFILM-H
SOD-323
SOD-523
SOT-23
(Single)
BAT54KFILM
(Single)
BAT54FILM
(Single)
BAT54AFILM
(Common anode)
BAT54SFILM
(Series)
Table 1. Device summary
Symbol Value
I
F
V
RRM
(typ) 7 pF
C
(max) 150 °C
T
j
300 mA
40 V
SOT-323
SOT-666
Configurations in top view
BAT54CFILM
(Common cathode)
BAT54WFILM
(Single)
BAT54CWFILM
(Common cathode)
BAT54AWFILM
(Common anode)
BAT54SWFILM
(Series)
BAT54-07P6FILM
(2 parallel diodes)
BAT54-09P6FILM
(2 opposite diodes)
October 2009 Doc ID 5505 Rev 10 1/13
www.st.com
13
Characteristics BAT54
1 Characteristics
Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
I
T
Table 3. Thermal parameters
Repetitive peak reverse voltage 40 V
RRM
I
Continuous forward current 300 mA
F
Surge non repetitive forward current tp = 10 ms Sinusoidal 1 A
FSM
Storage temperature range -65 to +150 °C
stg
T
Operating junction temperature range -40 to +150 °C
j
T
Maximum soldering temperature 260 °C
L
Symbol Parameter Value Unit
R
Junction to ambient
th(j-a)
(1)
SOT-23, SOD-123 500
SOT-323, SOD-323, 550
°C/W
SOD-523, SOT-666 600
1. Epoxy printed circuit board with recommended pad layout
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
T
= 25 °C
(1)
I
Reverse leakage current
R
j
= 100 °C 100
T
j
V
R
= 30 V
1
IF = 0.1 mA 240
= 1 mA 320
I
F
(2)
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
Table 5. Dynamic characteristics
Symbol Parameter
Forward voltage drop Tj = 25 °C
F
Test conditions
I
= 10 mA 400
F
= 30 mA 500
I
F
= 100 mA 900
I
F
Min. Typ. Max. Unit
µA
mV
Diode
C
t
rr
capacitance
Reverse
recovery time
V
= 1 V, F = 1 MHz 7 10 pF
R
IF = 10 mA, IR = 10 mA, Tj = 25 °C
I
= 1 mA, RL = 100 Ω
rr
2/13 Doc ID 5505 Rev 10
5ns
BAT54 Characteristics
Figure 1. Average forward power dissipation
versus average forward current
P(W)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35
δ=0.05
δ=0.2
δ=0.1
I
F(AV)
δ=0.5
(A)
δ
=tp/T
δ=1
T
tp
Figure 3. Reverse leakage current versus
reverse applied voltage
(typical values)
IR(µA)
1.E+02
Tj=100°C
1.E+01
1.E+00
1.E-01
1.E-02
0 5 10 15 20 25 30
Tj=50°C
Tj=25°C
VR(V)
Figure 2. Average forward current versus
ambient temperature (δ = 1)
I
(A)
F(AV)
0.35
0.30
0.25
0.20
0.15
δ
=tp/T
T
tp
T
(°C)
amb
0.10
0.05
0.00
0 25 50 75 100 125 150
Figure 4. Reverse leakage current versus
junction temperature
IR[Tj]/IR[Tj=25°C]
1.E+04
VR=3V
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
0 25 50 75 100 125 150
Tj(°C)
Figure 5. Junction capacitance versus
reverse applied voltage
(typical values)
C(pF)
10
1
1 10 100
VR(V)
V
F=1MHz
OSC
Tj=25°C
=30mV
Figure 6. Forward voltage drop versus
forward current (typical values)
IFM(A)
1.E+00
RMS
1.E-01
1.E-02
1.E-03
1.E-04
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Doc ID 5505 Rev 10 3/13
Tj=100°CTj=100°C
Tj=50°CTj=50°C
Tj=25°CTj=25°C
Tj=-40 °CTj=-40 °C
VFM(V)
Characteristics BAT54
Figure 7. Thermal resistance junction to
ambient versus copper surface
under each lead (SOD-323)
R
(°C/W)
th(j-a)
600
Epoxy FR4
=35 µm
e
CU
500
400
300
200
0 5 10 15 20 25 30 35 40 45 50
SCU(mm²)
Figure 9. Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOT-23)
Z
th(j-a)/Rth(j-a)
1.E+00
Single pulse
SOT23
Figure 8. Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOD-323)
Z
th(j-a)/Rth(j-a)
1.E+00
Single pulse
SOD323
1.E-01
1.E-02
Epoxy FR4
=2.25 mm²
S
CU
=35 µm
e
1.E-03
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
tP(s)
CU
Figure 10. Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOD-523)
Z
th(j-a)/Rth(j-a)
1.E+00
Single pulse
SOD523
1.E-01
1.E-01
1.E-02
Alumine substrate
1.E-02
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
tP(s)
10 x 8 x 0.5 mm
1.E-03
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
tP(s)
Epoxy FR4
e
=35 µm
CU
Figure 11. Relative variation of thermal impedance junction to ambient versus pulse duration
Z
th(j-a)/Rth(j-a)
1.E+00
Single pulse
SOT666
1.E-01
Epoxy FR4
e
=35 µm
1.E-02
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
tP(s)
CU
4/13 Doc ID 5505 Rev 10
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