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BAT 49
SMALL SIGNAL SC HO TTKY DIODE
DESCRIPTION
General purpose metal to silicon diode featuring
very low turn-on voltage and fast switching.
This device has integrated protection against excessive voltage such as electrostatic discharges.
ABSOLUTE RATINGS
Symbol Parameter Value Unit
V
RRM
I
F
I
FRM
I
FSM
T
stg
T
T
L
Repetitive Peak Reverse Voltage 80 V
Forward Continuous Current*
Repetitive Peak Forward Current*
Surge non Repetitive Forward Current*
Storage and Junction Temperature Range - 65 to 150
j
Maximum Lead Temperature for Soldering during 10s at 4mm
from Case
(limiting values)
= 70
T
a
t
= 1s
p
0.5
δ ≤
≤ 10ms
t
p
C
°
DO 41
(Glass)
500 mA
3A
10 A
- 65 to 125
230
C
°
C
°
C
°
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
Junction-ambient* 110
ELECTRICAL CHARACT E RISTI CS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
* *
I
R
V
* *
F
= 25°CV
T
j
= 25°CI
T
j
T
= 25°CI
j
T
= 25°CI
j
= 80V
R
= 10mA
F
= 100mA
F
= 1A
F
200
0.32 V
0.42
1
DYNAMIC CHARACTERI STICS
Symbol Test Conditions Min. Typ. Max. Unit
C
* On infinite heatsink with 4mm lead length
** Pulse test: t
= 25°C f = 1MHz
T
j
300µs δ < 2%
≤
p
.
August 1999 Ed : 1A
V
= 0V 120 pF
R
V
= 5V 35
R
C/W
°
µ
A
1/4
BAT 49
Figure 1. Forward current versus forward
voltage at low level (typical values).
Figure 2. Forward current versus forward
voltage at high level (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus V
cent.
RRM
in per
2/4