ST BAT48 User Manual
Features
BAT48
Small signal Schottky diode
■ Low leakage current losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ Extremely fast switching
■ Surface mount device
■ Low capacitance diode
Description
The BAT48 series uses 40 V Schottky barrier
diodes packaged in SOD-123, SOD-323 or
DO-35. This series is general purpose and
features very low turn-on voltage and fast
switching.
SOD-123
SOD-323
Configurations in top view
A
K
Band indicates cathode
Table 1. Device summary
Symbol Value
I
F
V
RRM
C (typ) 18 pF
(max) 150 °C
T
j
BAT48ZFILM
(Single)
BAT48JFILM
(Single)
BAT48RL
350 mA
40 V
July 2011 Doc ID 12634 Rev 2 1/8
www.st.com
8
Characteristics BAT48
1 Characteristics
Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)
Symbol Parameter Value Unit
V
I
T
Repetitive peak reverse voltage 40 V
RRM
I
Continuous forward current 350 mA
F
Surge non repetitive forward
FSM
current
Storage temperature range -65 to +150 °C
stg
Maximum operating junction temperature
T
j
range
tp = 10 ms
sinusoidal
SOD-123, SOD-323 2
DO-35 7.5
SOD-123, SOD-323 -40 to +150
DO-35 -40 to +125
SOD-123, SOD-323 260
Maximum temperature for soldering during
T
L
10 s
Table 3. Thermal parameters
DO-35 at 4 mm from
case
230
Symbol Parameter Value Unit
R
R
1. Epoxy printed circuit board with recommended pad layout
2. On infinite heatsink with 4 mm lead length
Junction to ambient
th(j-a)
Junction to lead
th(j-l)
(1)
(2)
SOD-123 500
°C/W
SOD-323 550
DO-35 300 °C/W
A
°C
°C
2/8 Doc ID 12634 Rev 2
BAT48 Characteristics
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
I
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Table 5. Dynamic characteristics
Symbol Parameter
Breakdown reverse voltage Tj = 25 °C Ir = 25 µA 40 V
BR
= 1.5 V 1
V
R
= 10 V 2
V
R
= 20 V 5
V
R
V
= 40 V 25
R
= 1.5 V 10
V
R
= 10 V 15
V
R
V
= 20 V 25
R
= 40 V 50
V
R
I
= 0.1 mA 0.25
F
= 1 mA 0.3
I
F
= 10 mA 0.4
I
F
= 50 mA 0.5
I
F
I
= 200 mA 0.75
F
= 500 mA 0.9
I
F
Min. Typ. Max. Unit
(1)
Reverse leakage current
R
(2)
Forward voltage drop Tj = 25 °C
F
= 380 µs, δ < 2 %
p
= 25 °C
T
j
Tj = 60 °C
Test conditions
µA
V
V
= 0 V, F = 1 MHz 30
C Diode capacitance
R
= 1 V, F = 1 MHz 18
V
R
Figure 1. Average forward power dissipation
versus average forward current
P(W)
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ = 1
T
tp
=tp/T
δ
Doc ID 12634 Rev 2 3/8
Figure 2. Average forward current versus
ambient temperature (δ = 1)
I (A)
F(AV)
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0 25 50 75 100 125 150
δ
=tp/T
T
T (°C)
tp
amb
pF
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