®
BAT46
SMALL SIGNAL SCHOTTKY DIODE
DESCRIPTION
General purpose, metalto silicon diode featuring
high breakdown voltage low turn-on voltage.
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
I
FRM
I
FSM
P
T
RRM
I
F
tot
stg
T
T
L
Repetitive Peak Reverse Voltage 100 V
Forward Continuous Current* Ta= 25°C 150 mA
t
≤ 1s
Repetitive Peak Forward Current*
Surge non Repetitive Forward Current*
p
δ≤0.5
t
= 10ms
p
Power Dissipation* TI= 80°C 150 mW
Storage and Junction Temperature Range - 65 to + 150
j
Maximum Temperature for Soldering during 10s at 4mm from
Case
DO-35
350 mA
750 mA
- 65 to + 125
230 °C
°C
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
* On infinite heatsink with 4mm lead length.
October 2001 - Ed: 2B
Junction-ambient* 300
°C/W
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BAT46
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
*T
V
F
I
*
R
Tj= 25°C
= 25°C
j
= 25°C
T
j
= 25°C
T
j
T
= 25°C
j
T
= 60°C 5
j
= 25°C
T
j
T
= 60°C 7.5
j
= 25°C VR= 50V 2
T
j
= 60°C 15
T
j
= 25°C VR= 75V 5
T
j
= 60°C 20
T
j
IR= 100µA
IF= 0.1mA
IF= 10mA
IF= 250mA
VR= 1.5V
VR= 10V
100 V
0.25 V
0.45
1
0.5
0.8
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
C
* Pulse test: tp≤ 300µs δ<2%.
Tj= 25°C VR= 0V
Tj= 25°C VR= 1V 6
f = 1Mhz
10 pF
µA
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