BAT42
®
BAT43
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicondiodes featuring
very low turn-on voltage fast switching.
These devices have integrated protection against
excessive voltage such as electrostatic dis-
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
I
FRM
I
FSM
P
T
RRM
I
F
tot
stg
T
T
L
Repetitive Peak Reverse Voltage 30 V
Forward Continuous Current Ta= 25°C 200 mA
Repetitive Peak Fordware Current tp≤ 1s
δ ≤ 0.5
Surge non Repetitive Forward Current* tp= 10ms 4 A
Power Dissipation* Tl= 65 °C 200 mW
Storage and Junction Temperature Range - 65 to +150
j
Maximum Temperature for Soldering during 10s at 4mm from
Case
DO-35
500 mA
- 65 to +125
230
°C
°C
°C
THERMAL RESISTANCE
Symbol Test Conditions Value Unit
R
th(j-a)
* On infinite heatsink with 4mm lead length
October 2001 - Ed: 1C
Junction-ambient* 300 °C/W
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BAT42 / BAT43
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
V
BR
*
V
F
*
I
R
DYNAMIC CHARACTERISTICS
Symbol Test Conditions Min. Typ. Max. Unit
CT
trr
h
Tj = 25°C
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
T
= 25°C
j
= 100°ÉC 100
T
j
= 25°C VR= 1V f = 1MHz 7 pF
j
Tj = 25°CI
= 100Ω
R
L
= 25°C RL= 15KΩ CL= 300pF f = 45MHz Vi= 2V
T
j
= 10mA IR= 10mA irr= 1mA
F
I
= 100µA
R
= 200mA
I
F
= 10mA
I
F
= 50mA
I
F
= 2mA
I
F
= 15mA
I
F
All Types 1 V
BAT 42 0.4
BAT 43 0.26 0.33
= 25V
V
R
30 V
0.65
0.45
0.5
5ns
80 %
µA
* Pulse test: tp≤ 300µs δ<2%.
Fig. 1:Forwardcurrentversus forward voltageat
different temperatures (typical values).
Fig. 2: Forward current versus forward voltage
(typical values).
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®