Features
■ very low conduction losses
■ negligible switching losses
■ low capacitance diode
■ Flip Chip, 2-bump package
BAT30F3
Small signal Schottky diode
Complies with the following standards
■ IEC 61000-4-2 level 1:
– ±2kV (air discharge)
– ±2kV (contact discharge)
Description
The BAT30F3 is a Schottky diode in a 2-bump,
Flip-Chip package.
This device is specially suited for switching mode
applications needing a low forward voltage drop
diode.
The electrical parameters are guaranteed across
the operating temperature range
(- 30 °C to 85 °C).
Flip Chip
(2 bumps)
Figure 1. Pin configuration (bump side)
1
A
B
Figure 2. Schematic
1
A
B
October 2010 Doc ID 16915 Rev 2 1/10
www.st.com
10
Characteristics BAT30F3
1 Characteristics
Table 1. Absolute maximum ratings (T
Symbol Parameter Value Unit
Peak pulse voltage:
V
PP
IEC 61000-4-2 air discharge
IEC 61000-4-2 contact discharge
amb
= 25 °C)
±2
±2
kV
V
T
1. condition to avoid thermal runaway for a diode on its own heatsink
Table 2. Electrical characteristics
Repetitive peak reverse voltage 20 V
RRM
Storage temperature range
stg
Operating junction temperature range -30 to +85 °C
T
op
<
Rth(j-a)
1
dPtot
dTj
(1)
-55 to +150 °C
Symbol Parameter Test conditions Min. Typ. Max. Unit
VR = 6 V - - 2
25 °C
= 20 V - - 6
V
R
V
= 6 V - - 20
(1)
I
Reverse leakage current
R
V
Forward voltage drop
F
1. Pulse test: tp = 5 ms, δ < 2%
55 °C
85 °C
25 °C
- 30 °C
R
V
= 20 V - - 55
R
V
= 6 V - - 145
R
= 20 V - - 360
V
R
I
= 0.1 mA - - 200
F
= 1 mA - - 270
I
F
= 10 mA - - 340
I
F
I
= 100 mA - - 440
F
= 200 mA - - 500
I
F
= 300 mA - - 560
I
F
I
= 0.1 mA - - 300
F
= 1 mA - - 355
I
F
= 10 mA - - 415
I
F
I
= 100 mA - - 495
F
= 200 mA - - 545
I
F
= 300 mA - - 600
I
F
mV
µA
2/10 Doc ID 16915 Rev 2
BAT30F3 Characteristics
Figure 3. Leakage current versus reverse
applied voltage (typical values)
I (µA)
R
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
Tj=85°C (Maximum specified values)
Tj=85°C
Tj=55°C
Tj=25°C
Tj=0°C
Tj=-30°C
V (V)
R
0 5 10 15 20 25 30
Figure 5. Forward voltage drop versus
forward current (typical values,
negative temperatures)
I (A)
FM
1.E+00
1.E-01
Tj=-20°CTj=-20°C
1.E-02
1.E-03
Tj=-10°CTj=-10°C
Tj=-30°CTj=-30°C
Figure 4. Forward voltage drop versus
forward current (typical values,
positive temperatures)
I (A)
FM
1.E+00
1.E-01
1.E-02
Tj= 55 °C
Tj= 85 °C
Tj= 25 °C
1.E-03
1.E-04
0.0 0.1 0.2 0.3 0.4 0.60.5 0.7
V (V)
Figure 6. Relative variation of reverse
leakage current versus junction
temperature (typical values)
I[Tj] / I [Tj= 25 °C]
RR
1.E+02
1.E+01
1.E+00
1.E-01
FM
V (V)
1.E-04
0.2 0.3 0.4 0.5 0.6 0.7
FM
Tj=-30°C (Maximum specified values)
1.E-02
-30 -20 0 20 40 60 80-10 10
30
Tj(°C)
50 70 90
Doc ID 16915 Rev 2 3/10