ST BAT30 User Manual
Features
■ Very low conduction losses
■ Negligible switching losses
■ Low forward and reverse recovery times
■ Extremely fast switching
■ Surface mount device
■ Low capacitance diode
Description
BAT30
Small signal Schottky diodes
BAT30JFILM
(Single)
SOD-323
BAT30KFILM
(Single)
SOD-523
BAT30LFILM
(Single)
SOD-923
The BAT30 series uses 30 V Schottky barrier
diodes encapsulated in a wide range of packages
such as SOD-323, SOD-523, SOD-923, SOT-23,
SOT-323, or SOT-666. This device is specially
suited for switching mode applications needing
low forward voltage drop diodes.
Table 1. Device summary
Symbol Value
I
V
F
RRM
C(typ) 14 pF
(max) 150 °C
T
j
300 mA
30 V
SOT-23
SOT-323
SOT-666
BAT30FILM
(Single)
BAT30AFILM
(Common anode)
BAT30SFILM
(Series)
BAT30CFILM
(Common cathode)
BAT30WFILM
(Single)
BAT30CWFILM
(Common cathode)
BAT30AWFILM
(Common anode)
BAT30SWFILM
(Series)
BAT30-07P6FILM
(2 parallel diodes)
BAT30-09P6FILM
(2 opposite diodes)
Configurations in top view
October 2009 Doc ID 12564 Rev 3 1/14
www.st.com
14
Characteristics BAT30
1 Characteristics
Table 2. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
I
T
Repetitive peak reverse voltage 30 V
RRM
I
Continuous forward current 300 mA
F
Surge non repetitive forward current tp = 10 ms Sinusoidal 1 A
FSM
Storage temperature range -65 to +150 °C
stg
T
Maximum operating junction temperature
j
Maximum soldering temperature 260 °C
T
L
(1)
150 °C
1. Pulse test: tp = 5 ms, δ < 2 %
Table 3. Thermal parameters
Symbol Parameter Value Unit
SOT-23 500
R
Junction to ambient
th(j-a)
(1)
SOT-323, SOD-323, 550
°C/W
SOD-523, SOT-666 600
SOD-923 900
1. On epoxy printed circuit board with recommended pad layout
Table 4. Static electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
= 5 V - - 0.5
V
R
= 10 V - - 1
V
T
= 25 °C
j
(1)
I
V
Reverse leakage current
R
(2)
Forward voltage drop Tj = 25° C
F
= 70 °C
T
j
T
= 85 °C - 18 50
j
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
R
= 25 V - 0.65 3
V
R
V
= 30 V - - 5
R
-720
= 10 V
V
R
I
= 0.1 mA - - 240
F
= 1 mA - - 300
I
F
= 10 mA - - 375
I
F
I
= 30 mA - - 430
F
= 100 mA - - 500
I
F
= 200 mA - - 580
I
F
I
= 300 mA - 530 -
F
µA
mV
2/14 Doc ID 12564 Rev 3
BAT30 Characteristics
Table 5. Dynamic characteristics
Symbol Parameter
C Diode capacitance
Test conditions
V
= 0 V, F = 1 MHz - 22 -
R
= 1 V, F = 1 MHz - 14 -
R
= 10 V, F = 1 MHz - 6 -
V
R
Figure 1. Power dissipation versus average
forward current
P (W)
0.175
δ=0.1
0.150
0.125
0.100
0.075
0.050
0.025
0.000
0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35
δ=0.05
δ=0.2
I (A)
F(AV)
δ=0.5
δ
=tp/T
δ=1
T
tp
Figure 3. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Min. Typ Max. Unit
Figure 2. Average forward current versus
ambient temperature (δ = 1)
I (A)
F(AV)
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0 25 50 75 100 125 150
δ
=tp/T
T
T (° C)
tp
amb
Figure 4. Relative variation of thermal
impedance junction to ambient
versus pulse duration
pFV
Z
th(j-a)/Rth(j-a)
1.E+00
Single pulse
SOT-23
1.E-01
Alumine substrate
10 x 8 x 0.5 mm
1.E-02
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02
tP(s)
Z
th(j-a)/Rth(j-a)
1.E+00
1.E-01
1.E-02
1.E-03
Single pulse
SOT-323/SOD-323
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Epoxy printed board FR4
Copper surface = 2.25 mm
Coppr thickness = 35 µm
(s)t
P
2
Doc ID 12564 Rev 3 3/14
Characteristics BAT30
/
3
/
0.00.20.40.60.81.0
0
Figure 5. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Z
R
th(j-a)
1.E+00
1.E-01
1.E-02
th(j-a)
Single pulse
SOT-666
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
(s)t
P
Epoxy printed board FR4
Coppr thickness = 35 µm
Figure 7. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Z
R
th(j-a)
1.E+00
1.E-01
1.E-02
1.E-03
th(j-a)
Single pulse
SOD-523
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
(s)t
P
Epoxy printed board FR4
Coppr thickness = 35 µm
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Z
th(j-a)/Rth(j-a)
1.E+00
Single pulse
SOD-923
1.E-01
(s)t
P
1.E-02
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+0
Figure 8. Thermal resistance junction to
ambient versus copper surface
under each lead (SOD-923)
R
(°C/W)
th(j-a)
900
800
700
600
500
400
300
200
100
0
Epoxy printed board FR4
Copper thichness = 35 µm
SCU(cm²)
1.2 1.4 1.61.82.
Figure 9. Thermal resistance junction to
ambient versus copper surface
Figure 10. Leakage current versus reverse
applied voltage (typical values)
under each lead (SOD-323)
R
(°C/W)
th(j-a)
600
500
400
300
200
0 5 10 15 20 25 30 35 40 45 50
SCU(mm²)
Epoxy printed board FR4
Copper thichness = 35 µm
4/14 Doc ID 12564 Rev 3
IR(µA)
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
0 5 10 15 20 25 30
Tj=150°C
Tj=125°C
Tj=85°C
Tj=25°C
VR(V)
BAT30 Characteristics
Figure 11. Relative variation of reverse
leakage current versus junction
temperature (typical values)
IR[Tj]/IR[Tj=25°C]
1.E+04
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
VR=30 V
Tj(°C)
-40 -20 0 20 40 60 80 100 120 140 160
Figure 13. Forward voltage drop versus
forward current (typical values)
IFM(A)
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
Tj=150 °CTj=150 °C
Tj=85 °CTj=85 °C
Tj=-40 °CTj=-40 °C
VFM(V)
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Figure 12. Junction capacitance versus
reverse applied voltage
(typical values)
C(pF)
100
10
1
1 10 100
V
OSC
F=1 MHz
=30 mV
Tj=25 °C
VR(V)
Figure 14. Forward voltage drop versus
forward current (typical values)
IFM(A)
1.E+01
1.E+00
1.E-01
Tj=125 °C
1.E-02
1.E-03
1.E-04
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Tj=25 °C
VFM(V)
RMS
Doc ID 12564 Rev 3 5/14
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