ST BAT20J User Manual
®
BAT20J
HIGH EFFICIENCY SWITCHING AND
ULTRA LOW LEAKAGE CURRENT SCHOTTKY DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
25°C(max) @ 15V 12 µA
I
R
1A
23 V
Tj (max) 150 °C
FEATURES AND BENEFITS
Low conduction losses
■
Very low reverse current
■
Negligible switching losses
■
Low capacitance diode
■
Low forward and reverse recovery times
■
Extremely fast switching
■
Surface mount device
■
DESCRIPTION
The BAT20J is using 23V schottky barrier diode
encapsulated on a SOD-323 package. This is specially suited for switching mode in mobile phone
and PDA power management applications or LED
driver circuits (step up converters).
AK
SOD-323
ABSOLUTE RATINGS (limiting values)
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage 23 V
Repetitive peak forward current 2 A
Average forward current δ = 0.38 1 A
Surge non repetitive forward current (tp=10ms sinusoidal) 5 A
Maximum storage temperature range - 65 to +150 °C
Tj Maximum operating junction temperature * 150 °C
TL Maximum temperature for soldering during * 260 °C
dPtot
*:
<
dTj Rth j a
thermal runaway condition for a diode on its own heatsink
−1()
Order code
Part Number Marking
BAT20JFILM 20
April 2004 - Ed: 1
1/5
BAT20J
THERMAL RESISTANCE
Symbol Parameter Value Unit
R
th (j-a)
(*) Mounted on epoxy board without copper heat sink.
Junction to Ambient (*) 600 °C/W
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameters Tests conditions Min. Typ. Max. Unit
I
* Reverse leakage current
R
Tj = 25°C VR=5V
(see note 1)
* Reverse leakage current Tj = 85°C VR=5V
I
R
** Forward voltage drop Tj = 25°C IF=10mA
V
F
* Pulse test tp = 380 µs, δ <2%
** Pulse test tp = 5 ms, δ <2%
Note 1: I
at 23 V and Tj = 25°C is equal to 60 µA typ.
R
V
=8V
R
V
=15V
R
V
=8V
R
V
=15V
R
I
= 100 mA
F
I
=1A
F
0.65
0.88
3.00
55
70
120
0.28
0.35
0.54
2
3
12
120
150
250
0.31
0.40
0.62
µA
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameters Tests conditions Min. Typ. Max. Unit
V
C
To evaluate the maximum conduction losses, use the following equations :
P = 0.32 x I
Diode capacitance VR=5V F=1MHz 20 30 pF
d
+ 0.23 x I
F(AV)
F2(RMS)
2/4
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