The BAT20J is using 23V schottky barrier diode
encapsulated on a SOD-323 package. This is specially suited for switching mode in mobile phone
and PDA power management applications or LED
driver circuits (step up converters).
AK
SOD-323
ABSOLUTE RATINGS (limiting values)
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage23V
Repetitive peak forward current2A
Average forward currentδ = 0.381A
Surge non repetitive forward current (tp=10ms sinusoidal)5A
Maximum storage temperature range- 65 to +150°C
TjMaximum operating junction temperature *150°C
TLMaximum temperature for soldering during *260°C
dPtot
*:
<
dTjRth ja
thermal runaway condition for a diode on its own heatsink
−1()
Order code
Part NumberMarking
BAT20JFILM20
April 2004 - Ed: 1
1/5
BAT20J
THERMAL RESISTANCE
SymbolParameterValueUnit
R
th (j-a)
(*) Mounted on epoxy board without copper heat sink.
Junction to Ambient (*)600°C/W
STATIC ELECTRICAL CHARACTERISTICS
SymbolParametersTests conditionsMin.Typ.Max.Unit
I
*Reverse leakage current
R
Tj = 25°CVR=5V
(see note 1)
*Reverse leakage currentTj = 85°CVR=5V
I
R
**Forward voltage dropTj = 25°CIF=10mA
V
F
*Pulse test tp = 380 µs, δ <2%
** Pulse test tp = 5 ms, δ <2%
Note 1: I
at 23 V and Tj = 25°C is equal to 60 µA typ.
R
V
=8V
R
V
=15V
R
V
=8V
R
V
=15V
R
I
= 100 mA
F
I
=1A
F
0.65
0.88
3.00
55
70
120
0.28
0.35
0.54
2
3
12
120
150
250
0.31
0.40
0.62
µA
DYNAMIC ELECTRICAL CHARACTERISTICS
SymbolParametersTests conditionsMin.Typ.Max.Unit
V
C
To evaluate the maximum conduction losses, use the following equations :
P = 0.32 x I
Diode capacitanceVR=5VF=1MHz2030pF
d
+ 0.23 x I
F(AV)
F2(RMS)
2/4
BAT20J
Fig. 1: Peak forward current versus ambient
temperature (δ = 0.11).
I(A)
P
3.0
2.5
2.0
1.5
1.0
δ
=tp/T
T
T(°C)
tp
amb
0.5
0.0
0255075100125150
Printed circuit board FR4
S =2.25mm
CU
2
Fig. 3: Relative variation of thermal impedance
junction to ambient versus pulse duration .
Z/R
th(j-a) th(j-a)
1.E+00
1.E-01
Single pulse
S =2.25mm
CU
2
Fig. 2: Average forward current versus ambient
temperature ( δ = 0.5).
I(A)
F(AV)
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
0255075100125150
δ
=tp/T
T
T(°C)
tp
amb
Printed circuit board FR4
S =2.25mm
CU
2
Fig. 4: Reverse leakage currrent versus reverse
voltage applied (typical values).
I (µA)
R
1.E+04
1.E+03
1.E+02
T =150°C
j
T =85°C
j
1.E-02
t(s)
1.E-03
1.E-031.E-021.E-011.E+001.E+011.E+021.E+03
p
Fig. 5: Relative variation of reverse leakage
currrent versus junction temperature (typical
values).
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