ST BAS70 User Manual

BAS70

Low capacitance, low series inductance and resistance Schottky diodes

Features

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery times

■ Surface mount device

■ Low capacitance diode

■ Low resistance and inductance

Description

The BAS70 series uses 70 V Schottky barrier diodes packaged in SOD-123, SOD-323, SOD523, SOT-23, SOT-323, SOT-323-6L or SOT-666. These diodes are specially suited for signal detection and temperature compensation in RF applications.

SOD-123

SOD-323

SOD-523

SOT-23

SOT-323

BAS70ZFILM (Single)

BAS70JFILM (Single)

BAS70KFILM (Single)

BAS70FILM (Single)

BAS70-04FILM (Series)

BAS70-05FILM (Common cathode)

BAS70-06FILM (Common anode)

BAS70WFILM (Single)

BAS70-04WFILM (Series)

BAS70-05WFILM (Common cathode)

BAS70-06WFILM (Common anode)

BAS70-08SFILM (3 parallel diodes)

Table 1. Device summary

Symbol Value

RRM

(max) 2 pF

(max) 150 °C

70 mA

70 V

SOT-323-6L

SOT-666

BAS70-07P6FILM (2 parallel diodes)

BAS70-09P6FILM (2 opposite diodes)

Configurations in top view

October 2009 Doc ID 12563 Rev 2 1/14

www.st.com

Characteristics BAS70

1 Characteristics

Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

Table 3. Thermal parameters

Repetitive peak reverse voltage 70 V

RRM

Continuous forward current 70 mA

Surge non repetitive forward current tp = 10 ms Sinusoidal 1 A

FSM

Storage temperature range - 65 to +150 °C

stg

Maximum operating junction temperature 150 °C

Maximum soldering temperature 260 °C

Symbol Parameter Value Unit

SOD-123, SOT-23 500

Junction to ambient

th(j-a)

(1)

°C/WSOT-323, SOD-323 550

SOD-523, SOT-666 600

1. Epoxy printed circuit board with recommended pad layout

Table 4. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

= 50 V 100 nA

(1)

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Table 5. Dynamic characteristics

Symbol Parameter

Reverse leakage current Tj = 25 °C

(2)

Forward voltage drop Tj = 25 °C

Test conditions

= 70 V 10

= 1 mA 410

= 10 mA 750

= 15 mA 1000

Min. Typ. Max. Unit

µA

mVI

C Diode capacitance V

Differential forward

resistance

Series inductance 1.5 nH

= 0 V, F = 1 MHz 2 pF

= 10 mA, F = 100 MHz 30 Ω

2/14 Doc ID 12563 Rev 2

BAS70 Characteristics

Figure 1. Average forward power dissipation

versus average forward current

P(W)

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0.00

0.00 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.10

d=0.05

d=0.1

d=0.2

d=0.5

d=1

=tp/T

(A)

F(AV)

Figure 3. Reverse leakage current versus

reverse applied voltage (typical values)

IR(µA)

1.E+02

1.E+01

1.E+00

1.E-01

1.E-02

1.E-03

0 10203040506070

Tj=150 °C

Tj=85 °C

Tj=25 °C

VR(V)

Figure 2. Average forward current versus

ambient temperature (δ = 1)

(A)

F(AV)

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

0.00

0 25 50 75 100 125 150

=tp/T

(°C)

amb

Figure 4. Reverse leakage current versus

junction temperature (typical values)

IR(µA)

1.E+02

VR=50 V

1.E+01

1.E+00

1.E-01

1.E-02

0 25 50 75 100 125 150

Tj(°C)

Figure 5. Junction capacitance versus

reverse applied voltage (typical values)

C(pF)

10.0

1.0

0.1

0.1 1.0 10.0 100.0

VR(V)

OSC

F=1 MHz

=30 mV

Tj=25 °C

Figure 6. Forward voltage drop versus

forward current (typical values)

IFM(mA)

1.E+02

RMS

Doc ID 12563 Rev 2 3/14

Tj=150 °C

1.E+01

Tj=-40 °CTj=-40 °C

1.E+00

Tj=85°CTj=85°C

1.E-01

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

VFM(V)

Characteristics BAS70

Figure 7. Forward voltage drop versus

forward current (typical values)

IFM(mA)

1.E+02

1.E+01

1.E+00

1.E-01

Tj=125 °C

Tj=25 °C

VFM(V)

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Figure 9. Relative variation of thermal

impedance junction to ambient versus pulse duration

(°C/W)

th(j-a)

1000

printed circuit board, epoxy FR4 e = 35 µm SOT-323-6L

100

Single pulse SOT-323-6L

Figure 8. Differential forward resistance

versus forward current (typical values)

R()FΩ

1000

100

0.1 1.0 10.0

IF(mA)

F=100 MHz

Tj=25 °C

Figure 10. Relative variation of thermal

impedance junction to ambient versus pulse duration

th(j-a)/Rth(j-a)

1.00

Single pulse

SOT-23

Aluminesubstrate

0.10

10 x 8 x 0.5 mm

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

tP(s)

Figure 11. Relative variation of thermal

impedance junction to ambient versus pulse duration

th(j-a)/Rth(j-a)

1.00

Single pulse

SOD-323

EpoxyFR4

=2.25 mm²

=35 µm

0.10

printed circuit board, epoxy FR4 e = 35 µm SOD-323

0.01

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02

tP(s)

alluminium oxide substrate 10 x 8 x 0.5 mm SOT-23

0.01

1.E-02 1.E-01 1.E+00 1.E+01 1.E+0

Figure 12. Relative variation of thermal

impedance junction to ambient versus pulse duration

th(j-a)/Rth(j-a)

1.00

Single pulse

SOT-666

Epoxy FR4

=35 µm

0.10

printed circuit board, epoxy FR4 e = 35 µm SOT-666

0.01

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

tP(s)

4/14 Doc ID 12563 Rev 2

BAS70 Ordering information scheme

Figure 13. Relative variation of thermal

Figure 14. Thermal impedance junction to impedance junction to ambient versus pulse duration

th(j-a)/Rth(j-a)

1.00

Single pulse

SOD-523

EpoxyFR4 e

=35 µm

0.10

0.01

printed circuit board, epoxy FR4 e = 35 µm SOD-523

0.00

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01

tP(s)

th(j-a)

600

550

500

450

400

350

300

0 5 10 15 20 25 30 35 40 45 50

2 Ordering information scheme

Figure 15. Ordering information scheme

BAS70 xx xx FILM

ambient versus copper surface under each lead

(°C/W)

printed circuit board, epoxy FR4 e = 35 µm SOD-323

SCU(mm²)

Signal Schottky diodes

V=70V

RRM

Configuration

No letter = Single diode 04 = Series diodes 05 = Common cathode 06 = Common anode 07 = 2 Parallel diodes 08 = 3 Parallel diodes 09 = 2 Opposite diodes

Package

Blank = SOT-23 J = SOD-323 W = SOT-323 K = SOD-523 P6 = SOT-666 S = SOT323-6L Z = SOD-123

Packing

FILM = Tape and reel

Doc ID 12563 Rev 2 5/14

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