ST BAS69 User Manual
Low capacitance small signal Schottky diodes
Main product characteristics
I
F
V
RRM
(typ) <1 pF
C
(max) 150° C
T
j
10 mA
15 V
BAS69 Series
BAS69KFILM
(Single)
SOD-523
Features and benefits
■ Low diode capacitance
■ Designed for RF applications
■ Low profile packages
■ Very low parasitic inductor and resistor
Description
The BAS69 series use 15V barrier, with extremely
low junction capacitance, suitable for the
detection of an RF signal and the compensation
of the voltage drift with the temperature. The
presented packages make the device ideal in
applications where space saving is critical.
The low junction capacitance will reduce the
disturbance on the RF signal.
Order codes
Part Number Marking
BAS69WFILM 23
BAS69-04WFILM 24
BAS69-05WFILM 25
BAS69-06WFILM 26
BAS69KFILM 65
BAS69-09P6FILM 69
BAS69-07P6FILM 67
SOT-323
SOT-666
BAS69WFILM
(Single)
BAS69-05WFILM
(Common cathode)
BAS69-06WFILM
(Common anode)
BAS69-04WFILM
(Series)
BAS69-07P6FILM
(2 parallel diodes)
BAS69-09P6FILM
(2 opposite diodes)
Configurations in top view
July 2006 Rev 1 1/9
www.st.com
Characteristics BAS69 Series
1 Characteristics
Table 1. Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
I
I
FSM
T
T
1. Pulse test: tp = 380 µs, δ < 2 %
Table 2. Thermal parameters
Repetitive peak reverse voltage 15 V
Continuous forward current 10 mA
F
Surge non repetitive forward current Half wave, single phase 60 Hz 2 A
Storage temperature range -65 to +150
stg
Maximum operating junction temperature
j
Maximum soldering temperature
L
(1)
(1)
150
260
Symbol Parameter Value Unit
R
th(j-a)
1. Epoxy printed circuit board with recommended pad layout
Table 3. Static electrical characteristics
Junction to ambient
(1)
SOT-323 550
° C/W
SOD-523, SOT-666 600
Symbol Parameter Test conditions Min. Typ Max. Unit
° CT
(1)
I
R
V
F
1. Pulse test: tp ≤ 250 ms, δ ≤ 2 %
Table 4. Dynamic characteristics
Reverse leakage current
(1)
Forward voltage drop
Symbol Parameter
C Diode capacitance V
R
Forward resistance IF = 5 mA, F = 100 MHz 15 Ω
F
L
Series inductance 1.5 nH
S
T
= 25° C
j
= 125° C 6 30
T
j
T
= 25° C
j
T
= 125° C 10 100
j
T
= 25° C
j
T
= 125° C 230 260
j
T
= 25° C
j
= 125° C 460 510
T
j
= 0 V, F = 1 MHz 1.0 pF
R
V
= 1 V
R
= 15 V
V
R
= 1 mA
I
F
I
= 10 mA
F
Test conditions
350 380
500 570
Min. Typ Max. Unit
0.035
0.23
µA
mV
2/9
BAS69 Series Characteristics
Figure 1. Forward voltage drop versus
forward current (typical values)
I (mA)
FM
1.E+02
1.E+01
Tj=125°CTj=125°C
1.E+00
1.E-01
Tj=85°CTj=85°C
Tj=25°CTj=25°C
Tj=-40°CTj=-40°C
V (V)
FM
0.0 0.2 0.4 0.6 0.8 1.0 1.2
Figure 3. Differential forward resistance
versus forward current (typical
values)
R( )FΩ
100
10
I (mA)
1
1.0 10.0 100.0
F
F=10kHz
Tj=25°C
Figure 2. Reverse leakage current versus
reverse voltage applied (typical
values)
I (µA)
R
1.E+02
Tj=125°C
1.E+01
1.E+00
Tj=85°C
1.E-01
1.E-02
Tj=25°C
V (V)
1.E-03
R
0.0 2.5 5.0 7.5 10.0 12.5 15.0
Figure 4. Junction capacitance versus
reverse voltage applied (typical
values)
C(pF)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0 2.5 5.0 7.5 10.0 12.5 15.0
V (V)
R
F=1MHz
Vosc=30mV
Tj=25°C
RMS
Figure 5. Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOT-323)
Z
th(j-a)/Rth(j-a)
1.E+00
1.E-01
1.E-02
1.E-03
Single pulse
SOT-323
Epoxy FR4
=2.25 mm²
S
CU
=35 µm
e
(s)t
P
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
CU
Figure 6. Relative variation of thermal
impedance junction to ambient
versus pulse duration (SOT-666)
Z
th(j-a)/Rth(j-a)
1.E+00
Single pulse
SOT-666
1.E-01
Epoxy FR4
e
=35 µm
(s)t
1.E-02
1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
P
3/9
CU
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