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AVS12 |
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AUTOMATIC VOLTAGE SWITCH (SMPS < 500W)
CONTROLLER
■50/60Hz FULL COMPATIBILITY
■INTEGRATED VOLTAGE REGULATOR
■TRIGGERING PULSE TRAIN OF THE TRIAC
■PARASITIC FILTER
■LOW POWER CONSUMPTION
TRIAC
■HIGH EFFICIENCY AND SAFETY SWITCHING
■UNINSULATED PACKAGE : AVS12CB
■VDRM = ± 600 V
■IT(RMS) : 12A
DESCRIPTION
The AVS12 kit is an automatic mains selector (110/220V AC) to be used in SMPS < 500 W. It is composed of 2 devices :
■The Controller is optimized for low consumption and high security triggering of the
triac. When connected to VSS, the mode input activates an additional option. If the main power drops from 220V to 110V, the triac control remains locked to the 220V mode and avoids any high voltage spike when the voltage is restored to 220V.
When connected to VDD, the mode input desactivates this option.
■The TRIAC is specially designed for this application. An optimization between sensitivity and dynamic parameters of the triac gate highly reduces the losses of supply resistor and allows excellent immunity against disturbances.
A2
G
A1A2
AVS1ACP08 |
AVS12CB |
DIP-8 |
TO-220AB |
PIN CONNECTION
VSS |
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1 |
8 |
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VM |
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Osc / In |
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2 |
7 |
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Mode |
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Osc / Out |
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3 |
6 |
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N.C. |
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VDD |
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4 |
5 |
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VG |
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January 2002 - Ed: 3C |
1/7 |
AVS12
BLOCK DIAGRAM
AVS1ACP08 |
MODE |
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Supply |
Peak Voltage
Detector
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AVS12CB |
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Reset |
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A2 |
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Mains |
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Parasitic |
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mode |
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CP |
Controller |
Q |
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Filter |
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Zero Crossing |
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Detector |
S |
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Triggering |
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Q |
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CP |
Time |
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OSC/IN |
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Controller |
A1 |
Oscillator |
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OSC/OUT |
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ABSOLUTE MAXIMUM RATINGS
CONTROLLER AVS1ACP08
Symbol |
Parameter |
Value |
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Unit |
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Min. |
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Max. |
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VSS |
Supply voltage |
-12 |
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0.5 |
V |
VI / VO |
I / O voltage |
VSS -0.5 |
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0.5 |
V |
II / IO |
I / O current |
-40 |
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+40 |
mA |
Tstg |
Storage Temperature |
-60 |
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+150 |
°C |
Toper |
Operating Temperature code ''C'' |
0 |
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+70 |
°C |
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TRIAC AVS12CB Tj = +25°C (unless otherwise specified)
Symbol |
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Parameter |
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Value |
Unit |
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VDRM |
Repetitive peak off-state voltage (2) |
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± 600 |
V |
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IT(RMS) |
RMS on-state current (360° conduction angle) |
T C = 70°C |
12 |
A |
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ITSM |
Non repetitive surge peak on-state current ( Tj initial = 25°C ) |
t = 8.3ms |
105 |
A |
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t = 10ms |
100 |
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I2t |
I2t value |
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t = 10ms |
50 |
A2s |
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dI / dt |
Critical rate of rise of on-state current (1) |
Repetitive |
20 |
A/µs |
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F = 50Hz |
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Non |
100 |
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Repetitive |
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dV/dt * |
Linear slope up to 0.67 VDRM |
Gate open |
Tj = 110°C |
50 |
V/µs |
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Tstg |
Storage Temperature |
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- 40 + 150 |
°C |
Tj |
Junction Temperature Range |
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0 + 125 |
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(1) Gate supply : IG = 100mA – di/dt = 1A/μs |
* For either polarity of electrode A2 voltage with reference to electrode A1 |
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(2) Tj = 110°C |
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2/7 |
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AVS12 |
THERMAL RESISTANCE |
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TRIAC AVS12CB |
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Symbol |
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Parameter |
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Value |
Unit |
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Rth (j-a) |
Junction to ambient |
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60 |
°C/W |
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Rth (j-c) DC |
Junction to case for DC |
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3 |
°C/W |
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Rth (j-c) AC |
Junction to case for 360° conduction angle (F = 50Hz) |
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2.3 |
°C/W |
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DC GENERAL ELECTRICAL CHARACTERISTICS |
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TRIAC AVS12CB |
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Symbol |
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Parameter |
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Value |
Unit |
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Min. |
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Max. |
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VGD |
VD = VDRM |
RL = 3.3kΩ Pulse duration > 20µs |
Tj = 110°C |
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0.2 |
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V |
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VTM * |
ITM = 17A |
tp = 10ms |
Tj = 25°C |
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1.75 |
V |
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IDRM * |
VDRM rated |
Gate open |
Tj = 25°C |
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10 |
μA |
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Tj = 110°C |
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500 |
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* For either polarity of electrode A2 voltage with reference to electrode A1 |
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Fig. 1: Maximum RMS power dissipation versus RMS on-state current (F = 60Hz). (Curves are cut off by (dI/dt)c limitation)
Fig. 2: Correlation between maximum mean power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact.
3/7