ST AN626 Application note

AN626
Application note
Serial EEPROM product numbering
This application note provides a detailed description of the part numbering scheme of Serial EEPROM products.
The part numbering scheme consists of a maximum of 13 digits grouped into nine fields (A to H) as shown in Table 1: Serial EEPROM part numbering scheme on page 1<Blue>Table
Fields A to C represent the product identifiers and fields D to H the product options. The “-” character is used to separate the identifiers from the options.

Table 1. Serial EEPROM part numbering scheme

Digit Field Use
1st A Product line (“M” = memory)
2nd
3rd
4th
B Device type (Product family)
C Device function (Memory capacity)5th
6th
7th - Dash, to separate the product number identifiers from the product option designators
8th D Operating range (V
9th
E Package type
10th
11th F Device grade (Temperature range)
12th G Option
13th H Plating technology
14th /J Die process
CC
)
An additional “/” followed by two digits are used by ST to aid traceability, and might appear on some documents at the bottom of the Ordering information scheme table under Process. This information offers the die and technology references (for temperature range 3 devices) and can be ignored for temperature range 6 devices.
July 2010 ID 5663 Rev 4 1/5
www.st.com

Table 2. Field A, 1st character, product line

Product line code Product line type
M Memory

Table 3. Field B, 2nd and 3rd characters, product family

Family code Memory type Family
AN626
93
24 I2C
Non-volatile memory
MICROWIRE
95 SPI
33
34 I
Application-specific memory Non-volatile memory
MICROWIRE
2
C
35 SPI

Table 4. Field C, 4th, 5th and 6th characters, memory capacity

Capacity Microwire (M93) I²C (M24) SPI (M95)
1 Kb C46 C01 010
2 Kb C56 C02 020
4 Kb C66 C04 040
8 Kb C76 C08 080
16 Kb C86 C16 160
32 Kb - C32 320
64 Kb - C64 640
128 Kb - 128-B 128
256 Kb - 256-B 256
512 Kb - 512 512
1 Mb - M01 M01
2 Mb - M02 M02

Table 5. Field D, 8th character, VCC range

Voltage range code Memory Voltage range
Blank
W 2.5 V to 5.5 V
Serial EEPROMs
R 1.8 V to 5.5 V
F 1.7 V to 5.5 V
2/5 ID 5663 Rev 4
4.5 V to 5.5 V
AN626
Table 6. Field E, 9
th
and 10th characters, package (two letters used in every case)
Package code Package type
BN PSDIP8 standard
CS WLCSP (Chip scale package)
CT Thin WLCSP (Chip scale package)
DW TSSOP8
DS TSSOP8 3 × 3 mm (MSOP8)
MN SO8 narrow 0.150 mils
MW SO8 wide 0.200 mils
MB UFDFPN8 (MLP8)
CS WLCSP (chip scale package)
CT TWLSCP (thin chip scale package)

Table 7. Field F, 11th character, temperature range

Device grade Temperature range
1 0 °C to 70 °C
3
–40 °C to +125 °C, with a certified reliability flow tailored for the automotive industry
6 –40 °C to +85 °C

Table 8. Field G, 12th, packing option

Option code Option
Blank Standard packing
T Tape and reel packing

Table 9. Field H, 13th, plating technology

Code Plating technology
®
P or G ECOPACK

Table 10. Field J, 14th, die process

(RoHS compliant)
Code Plating technology
G or S F6SP
B or P F6DP
AF8L
KF8H
For complete details of the correct product number, and ordering codes, for a specific product, please contact your nearest ST sales office or distributor.
ID 5663 Rev 4 3/5
Revision history AN626

Revision history

Table 11. Document revision history

Date Revision Changes
June-1998 1.0 First Issue.
15th digit concerning Plating option added in Ta bl e 1 : Se r i a l
22-Nov-2004 2.0
25-Apr-2008 3 Document reformatted. All tables updated.
19-Jul-2010 4
EEPROM part numbering scheme. Tables 3, 5, 5, 6 updated and Table 9: Field H, 13th, plating technology added.
Table 1: Serial EEPROM part numbering scheme, Ta b l e 4: F i e l d C, 4th, 5th and 6th characters, memory capacity, and Ta bl e 6 : F i el d E ,
th
and 10th characters, package (two letters used in every case)
9
updated. Table 10: Field J, 14th, die process added.
4/5 ID 5663 Rev 4
AN626
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ID 5663 Rev 4 5/5
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