The SPC564Axx /SPC563Mxx devices target a range of powertrain applications:
●Low to mid range engine management
●Automotive transmission control
The devices are based on the e200zx Power Architecture
version of the enhanced Timing Processor Unit (eTPU2) for advanced, independent timing
control operations.
This document aims to provide guidelines to design the ECU hardware in the most efficient
way. It is focused on:
The SPC564Axx / SPC563Mxx devices require three separate power supplies, nominally:
●5V (VDDREG, VDDEHx, VDDA);
●3.3V (VRC33, VDDEHx, VDDEx);
●1.2V (VDD, VDDPLL);
In addition, an optional 0.95 - 1.2 / 2 - 5.5 V V
be required
(a)
.
stby
Different modes of operations are possible:
●Single 5V system power supply (SPC564Axx: QFP176 only, SPC563Mxx: QFP144
only)
●Three external power supplies
●5V and 3.3V provided externally (1.2 V internally controlled)
●5V and 1.2V provided externally (3.3 V internally generated)
1.1 Single 5 V system power supply
The SPC564Axx in QFP176 and the SPC563Mxx in QFP144 devices can operate from a
single 5 volt system power supply. An on-chip regulator is provided for 3.3 volts, and an onchip regulator controller is provided for the 1.2 volt supply. The 1.2 volt controller requires an
external NPN ballast transistor and external bypassing for proper operation. This section
covers the requirements for the regulator controller and the bypass capacitors for the device.
The Voltage Regulator Supply (VDDREG) is the 5V input to the internal 3.3V regulator and
the 1.2 regulator controller. This input can be tied to VSS to disable these feature. However
grounding VDDREG disables also the low voltage inhibit (LVI) circuit. Refer to Section 1.2:
External power supply configuration for more details.
The SPC564Axx in BGA324 and the SPC563Mxx in QFP176 devices instead cannot
operate from a single 5 volt system power supply. Most of the SPC564Axx EBI interface pins
(main difference between BGA324 and QFP176) can’t be powered with 5V, therefore an
additional external voltage supply (3.3 V) is needed. Similarly, SPC563Mxx QFP176 Nexus
pins (ALT_MDOx, ALT_MSEOx, ALT_EVTI, ALT_EVTO and ALT_MCKO) must be supplied
with 3.3 V.
for the SRAM stand-by functionality may
1.1.1 External power supply slew rate
Make sure that all power supply ramps are not too fast and in line to what is specified in the
device datasheet. Higher slew rates might cause false ESD trigger.
1.1.2 3.3 V power supply
The 3.3V regulator circuitry is completely contained within the device and it requires only the
5V input supply (VDDREG) and a bypass capacitor on the regulator output(s), VRC33. This
3.3V regulator is intended for internally operation only (oscillator, part of FLASH, some
a. Refer to Section 1.6: Stand-by RAM functionality
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AN4092Power Management Controller (PMC)
Nexus pins) and it must not be used to supply external circuitry or other IOs. Nevertheless,
VRC33 can be used as the reference on the debug connector of the JTAG/Nexus
interface
(b)
.
Please notice that the JTAG and some Nexus signals (TCK, TDI, TDO, TMS, JCOMP,
MSEO[0:1], RDY, MDO[4..11], EVTO, EVTI) even if powered by a nominal 5V supply,
VDDEH7, are always operating on 3.3 voltage levels, being MultiV pads configured by
default (this setting cannot be changed) in low swing mode. On the other hand, when the
same MultiV pads are configured as GPIO (or eTPU), they work on 5V levels (this setting
cannot be changed either).
1.1.3 1.2 V power supply and regulator controller
Most of the internal device circuitry is powered by the 1.2 V VDD input. This includes the
core and the majority of the device internal logic. An internal regulator controller is
implemented to provide a more cost optimized solution. By using an external ballast
transistor, the power loss from reducing the 5 V to 1.2 V can be dissipated externally.
This 1.2V voltage regulator controller provides a current signal (VRCCTL) that drives the
base of the external transistor. VDD is internally connected to the a sense signal that is
compared to an internal bandgap reference that sets the reference voltage. Depending on
VDD the current flowing out of the VRCCTL is adjusted to keep the 1.2 voltage level.
1.1.4 External ballast transistor
The following NPN transistors are guaranteed for use with the on-chip voltage regulator
controller: ON Semiconductor BCP68T1 or NJD2873 as well as NXP BCP68. The collector
of the external transistor is preferably connected to the same voltage supply source as the
output stage of the regulator, however it can also be connected to another voltage supply
(for example 3.3 V).
Any other transistor type / vendor may not work with the circuitry proposed in the
Section 1.1.5: 1.2V core regulator external circuitry in all the conditions, considering the
PVT (Process, Voltage, Temperature) worst cases.
Gain
The maximum current available or the VDD supply depends on the gain of the NPN
transistor used, it should be high enough to allow the operation in the worst case scenario in
terms of current consumption, given the minimum current that can be sourced by
VRCCTL
From the SPC564Axx point of view, the worst case is at hot, the device may require up to
450mA
In addition the transistor gain should not be too high otherwise the regulator may become
unstable.
b. IEEE-ISTO 5001™ - 2003 extract: “The VREF signal is used to establish the signaling levels of the debug
c. Please refer to device DS.
d. Preliminary data. Check the latest DS for updated figures.
(c)
.
(d)
on the VDD. On the other hand, usually the worst case gain is obtained at cold.
interface of the target system. Any current drawn from this pin should be limited to that needed for voltage
translation and/or signal interpolation and is not intended to supply logic functions or power. VREF is not
necessarily at the target processor VDD level.”
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Power Management Controller (PMC)AN4092
Power dissipation
Another important point is that the external transistor must be able to dissipate the power
due to the voltage drop. The worst case is calculated as follow: (VDDREG
IDD
= (5.25 - 1.32) * 0.450 = 1.768W. Depending on the package, this power might not
max
be dissipated. For example, if the total thermal resistance is 25C/Watt, T
125C, 1W is the maximum allowed. Sometimes a heatsink is required to reduce the overall
thermal resistance and thus increase the power dissipation.
An optional collector resistor can help in sharing the power dissipation. For example a 2
Ohm resistor on the collector reduce the voltage drop between collector and emitter by
0.9 V. In this case the transistor has to dissipate only (5.25 - 1.32 - 0.9) * 0.450 = 1.3635W.
Ballast transistor saturation voltage
On the other hand, the value of the collector resistor cannot be too high because the
transistor must always be operating out of the saturation region: VCE>VCE
if the VCE
= 0.3V, R
sat
= (VDDREG
max
min
- VDD
/ 0.45 = 7.6 Ohm.
1.1.5 1.2V core re gulator external circuitry
In the Figure 1 and Figure 2 are shown the guaranteed configuration of the external
components
series impedance mismatch require bigger bypass capacitor on the 5V supply. The value of
the collector cap can be reduced to the ones of the emitter to allow the matching.
The ground connection is also critical and must be as close as possible to the mandatory
V
capacitor bank to be effective.
DD
The snubber circuit on the base is required for stability reasons.
(f)
. Collector and emitter caps should be the same type capacitors; otherwise
max
- VCE
sat
) / IDD
- VDD
max
= 150C e T
j
. For example,
sat
= (4.75 - 1.32 - 0.3)
max
max
amb
(e)
) *
=
e. The worst case is normally with VDD = 1.12V, however the max current is specified when VDD = 1.32V.
f. Refer also to Appendix A: Previous recommended PMC network configurations
Depending on the 5V regulator impedance,
the required capacitor can go up to 100uF
May or may not be required. It depends on
the allowable power dissipation of T
1
+/-10% The required value can be obtained
by using more resistors in parallel
SupplyQuantityValueNotes
VRC331470nF - 2uFLow ESR (<50mOhm)
VSTBY110nF
To be grounded if the Stand-by feature is
not used.
1100nF
VDDPLL
110nF
4100nF
VDDEHx
Two pairs each side
41nF
VDDA110uFTo be connected between VDDA and VSSA
VRH110nF
VRL
VSSA
REFBYPC1100nF
1.1.6 Inrush current
Since big capacitors need to be charged, a large current can be required when the power is
turned on, to be more precise when the 1.2V regulator is switched on.
A soft-start circuitry is included in the 1.2V regulator but the ramp is only limited to 60-80us
(PVT variation), being ineffective for limiting the inrush current.
As already pointed out in the Section 1.1.4, the resistor on the collector may or may not be
required depending on the allowable power dissipation of the ballast transistor. However the
resistor on the collector can be also very useful in limiting the current necessary to charge
the capacitors during power on.
REFBYPC is not a supply. The external
bypass capacitor must be placed between
REFBYPC pin and GND.
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Power Management Controller (PMC)AN4092
Figure 3.Inrush current example - without collector resistor
Figure 4.Inrush current example - with collector resistor
1.1.7 Layout recommendations
The inductance of the heatsink rail of the ballast transistor and the MCU lead to inductance
in the system. The placement of the transistor also affects the inductance, due to the lengths
of the 1.2 V traces (from the emitter to the V
inductances eventually reduce the phase margin jeopardizing the regulator stability.
It is mandatory to keep the parasitic inductance between the emitter and V
than 20nH.
pins) and of the VRCCTL signal: those
DD
pins lower
DD
12/38Doc ID 023080 Rev 1
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