In recent years the variable speed motor control market has required high performance
solutions able to satisfy the increasing energy saving requirements, compactness, reliability,
and system costs in home appliances, such as dish washers, refrigerator compressors, air
conditioning fans, draining and recirculation pumps, and in low power industrial applications,
such as small fans, pumps and tools, etc. To meet these market needs, STMicroelectronics
has developed a new family of very compact, high efficiency, dual-in-line intelligent power
modules, with optional extra features, called small low-loss intelligent molded module nano
(SLLIMM™-nano).
The SLLIMM-nano product family combines optimized silicon chips, integrated in three main
inverter blocks:
●power stage
–six very fast IGBTs
–six freewheeling diodes
●driving network
–three high voltage gate drivers
–three gate resistors
–three bootstrap diodes
●protection and optional features
–op amp for advanced current sensing
–comparator for fault protection against overcurrent and short-circuit
–smart shutdown function
–dead time, interlocking function and undervoltage lockout.
Thanks to its very good compactness, the fully isolated SLLIMM-nano package (NDIP) is
the ideal solution for applications requiring reduced assembly space, without sacrificing
thermal performance and reliability.
Compared to discrete-based inverters, including power devices, and driver and protection
circuits, the SLLIMM-nano family provides a high integrated level that means simplified
circuit design, reduced component count, lower weight, and high reliability.
The aim of this application note is to provide a detailed description of SLLIMM-nano
products, providing guidelines to motor drive designers for an efficient, reliable, and fast
design when using the new ST SLLIMM-nano family.
Inverter design concept and SLLIMM-nano solutionAN4043
1 Inverter design concept and SLLIMM-nano solution
Motor drive applications, ranging from a few tens of watts to mega watts, are mainly based
on the inverter concept thanks to the fact that this solution can meet efficiency, reliability,
size, and cost constraints required in a number of markets.
As shown in
Figure 1
, an inverter for motor drive applications is basically composed of a
power stage, mainly based on IGBTs and freewheeling diodes; a driving stage, based on
high voltage gate drivers; a control unit, based on microcontrollers or DSPs; some optional
sensors for protection and feedback signals for controls.
The approach of this solution with discrete devices produces high manufacturing costs
associated with high reliability risks, bigger size and higher weight, a considerable number
of components and the significant stray inductances and dispersions in the board layout.
Figure 1.Inverter motor drive block diagram
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In recent years, the use of intelligent power modules has rapidly increased thanks to the
benefits of greater integration levels. The new ST SLLIMM-nano family is able to replace
more than 20 discrete devices in a single package.
discrete-based inverter and the SLLIMM-nano solution, the advantages of SLLIMM-nano
can be easily understood and can be summarized in a significantly improved design time,
reduced manufacturing efforts, higher flexibility in a wide range of applications, and
increased reliability and quality level.
In addition, the optimized silicon chips in both control and power stages and the optimized
board layout provide maximized efficiency, reduced EMI and noise generation, higher levels
of protection, and lower propagation delay time.
6/60Doc ID 022726 Rev 1
Figure 2
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shows a comparison between a
AN4043Inverter design concept and SLLIMM-nano solution
Figure 2.Discrete-based inverter vs. SLLIMM-nano solution comparison
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1.1 Product synopsis
The SLLIMM-nano family has been designed to satisfy the requirements of a wide range of
final applications up to 100 W (in free air), such as:
●dish washers
●refrigerator compressors
●air conditioning fans
●draining and recirculation pumps
●low power industrial applications
●small fans, pumps and tools.
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The main features and integrated functions can be summarized as follows:
●600 V, 3 A ratings
●3-phase IGBT inverter bridge including:
–six low-loss IGBTs
–six low forward voltage drop and soft recovery freewheeling diodes
●three control ICs for gate driving and protection including:
–smart shutdown function
–comparator for fault protection against overcurrent and short-circuit
–op amp for advanced current sensing
–three integrated bootstrap diodes
–interlocking function
–undervoltage lockout
●open emitter configuration for individual phase current sensing
●very compact and fully isolated package
●integrated gate resistors for IGBT switching speed optimum setting
●gate driver proper biasing.
Doc ID 022726 Rev 17/60
Inverter design concept and SLLIMM-nano solutionAN4043
Figure 3
Figure 3.SLLIMM block diagram
shows the block diagram of the SLLIMM-nano included in the inverter solution.
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The power devices (IGBTs and freewheeling diodes), incorporated in the half bridge block,
are tailored for a motor drive application delivering the greatest overall efficiency, thanks to
the optimized trade-off between conduction and switching power losses and very low EMI
generation, as a result of reduced dV/dt and di/dt.
The IC gate drivers have been selected in order to meet two levels of functionality, giving
users more freedom to choose: a basic version which includes the essential features for a
cost-effective solution and a fully featured version which provides advanced options for a
sophisticated control method.
The fully isolated NDIP package offers a high compactness level, very useful in those
applications with reduced space, ensuring at the same time, high thermal performance and
reliability levels.
8/60Doc ID 022726 Rev 1
AN4043Inverter design concept and SLLIMM-nano solution
1.2 Product line-up and nomenclature
Table 1.SLLIMM-nano line-up
Basic versionFully featured version
Features
STGIPN3H60ASTGIPN3H60
Voltage (V)600600
Current @ T
R
max. (°C/W)5050
thJA
Package typeNDIP-26LNDIP-26L
Package size (mm) X, Y, Z29.5x12.5x3.129.5x12.5x3.1
Integrated bootstrap diodeYesYes
SD functionNoYes
Comparator for fault protectionNoYes (1 pin)
Smart shutdown functionNoYes
Op amps for advanced current sensingNoYes
Interlocking functionYesYes
Undervoltage lockoutYesYes
Open emitter configurationYes (3 pins)Yes (3 pins)
Inverter design concept and SLLIMM-nano solutionAN4043
1.3 Internal circuit
Figure 5.Internal circuit of the STGIPN3H60A
10/60Doc ID 022726 Rev 1
AN4043Inverter design concept and SLLIMM-nano solution
Figure 6.Internal circuit of the STGIPN3H60
1.4 Absolute maximum ratings
The absolute maximum ratings represent the extreme capability of the device and they can
be normally used as a worst limit design condition. It is important to note that the absolute
maximum value is given according to a set of testing conditions such us temperature,
frequency, voltage, and so on. Device performance can change according to the applied
condition.
Doc ID 022726 Rev 111/60
Inverter design concept and SLLIMM-nano solutionAN4043
The SLLIMM-nano specifications are described below using the STGIPN3H60 datasheet as
an example. Please refer to the respective product datasheets for a detailed description of
all possible types.
Table 2.Inverter part
SymbolParameterValueUnit
V
CES
±I
±I
P
TOT
1. Applied between HINU, HINV, HINW; LINU, LINV, LINW and GND.
2. Calculated according to the iterative
3. Pulse width limited by max. junction temperature.
Collector emitter voltage (V
(2)
Each IGBT continuous collector current at TC = 25 °C3A
C
(3)
Each IGBT pulsed collector current18A
C
Each IGBT total dissipation at TC = 25 °C8W
(1)
IN
Equation 1
= 0)
600V
.
Equation 1
●V
: collector emitter voltage
CES
)T(I
=
CC
⋅
−
TT
−
Cmaxj
))T(IT(@VR
CCmax,j)(max)sat(CE)cj(th
The power stage of the SLLIMM-nano is based on IGBTs (and freewheeling diodes) having
600 V V
rating. Generally, considering the intelligent power module internal stray
CES
inductances during the commutations, which can generate some surge voltages, the
maximum surge voltage between P-N (V
Figure 7
. At the same time, considering also the surge voltage generated by the stray
PN(surge)
) allowed is lower than V
, as shown in
CES
inductance between the device and the DC-link capacitor, the maximum supply voltage (in
steady-state) applied between P-N (V
) must be even lower than V
PN
PN(surge)
. Thanks to the
small package size and the lower working current, this phenomenon is less marked in the
SLLIMM-nano than in a big intelligent power module.
12/60Doc ID 022726 Rev 1
AN4043Inverter design concept and SLLIMM-nano solution
Figure 7.Stray inductance components of output stage
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: each IGBT continuous collector current
C
The allowable DC current continuously flowing at the collector electrode (T
parameter is calculated according to
Table 3.Control part of the STGIPN3H60
SymbolParameterValueUnit
V
OUT
V
CC
V
CIN
V
OP+
V
OP
V
boot
V
V
SD/OD
dV
OUT
Output voltage applied between OUTU, OUTV, OUTW, and
GND (V
CC
Low voltage power supply-0.3 to 21V
Comparator input voltage-0.3 to VCC +0.3V
Op amp non-inverting input -0.3 to V
Op amp inverting input-0.3 to V
Bootstrap voltage-0.3 to 620V
IN
Logic input voltage applied between HIN, LIN and GND-0.3 to 15 V
Open drain voltage-0.3 to 15V
/dtAllowed output slew rate50V/ns
Equation 1
=15 V)
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CC
+0.3V
CC
●V
: low voltage power supply
CC
Doc ID 022726 Rev 113/60
Inverter design concept and SLLIMM-nano solutionAN4043
VCC represents the supply voltage of the control part. A local filtering is recommended to
enhance the SLLIMM-nano noise immunity. Generally, the use of one electrolytic capacitor
(with greater value but not negligible ESR) and one smaller ceramic capacitor (hundreds of
nF), faster than the electrolytic one to provide current, is suggested.
Please refer to
Table 4.Supply voltage and operation behavior
Ta b le 4
in order to properly drive the SLLIMM-nano.
VCC voltage (typ. value)
Operating behavior
STGIPN3H60ASTGIPN3H60
< 10 V< 12 V
As the voltage is lower than the UVLO threshold the control circuit is not fully
turned on. A perfect functionality cannot be guaranteed.
12 V – 17 V13.5 V – 18 VTypical operating conditions
> 18 V> 21 VControl circuit is destroyed
Table 5.Total system
SymbolParameterValueUnit
T
J
T
C
Operating junction temperature-40 to 150°C
Module case operation temperature-40 to 125°C
14/60Doc ID 022726 Rev 1
AN4043Electrical characteristics and functions
2 Electrical characteristics and functions
In this section the main electrical characteristics of the power stage are discussed, together
with a detailed description of all the SLLIMM-nano functions.
2.1 IGBTs
The SLLIMM-nano achieves power savings in the inverter stage thanks to the use of IGBTs
manufactured with the proprietary advanced PowerMESH™ process.
These power devices, optimized for the typical motor control switching frequency, offer an
excellent trade-off between voltage drop (V
minimize the two major sources of energy loss, conduction and switching, reducing the
environmental impact of daily-use equipment. A full analysis on the power losses of the
complete system in reported in
2.2 Freewheeling diodes
Turbo 2 ultrafast high voltage diodes have been adequately selected for the SLLIMM-nano
family and carefully tuned to achieve the best t
diodes in order to further improve the total performance of the inverter and significantly
reduce the electromagnetic interference (EMI) in the motor control applications which are
quite sensitive to this phenomena.
Section 4: Power losses and dissipation
) and switching speed (t
CE(sat)
/VF trade-off and softness as freewheeling
rr
), and therefore
fall
.
2.3 High voltage gate drivers
The SLLIMM-nano is equipped with a versatile high voltage gate driver IC (HVIC), designed
using BCD offline (Bipolar, CMOS, and DMOS) technology (see
suited to field oriented control (FOC) motor driving applications, able to provide all the
functions and current capability necessary for high-side and low-side IGBT driving. This
driver can be used in all applications where high voltage shifted control is necessary and it
includes a patented internal circuitry which replaces the external bootstrap diode.
Figure 8
) and particularly
Doc ID 022726 Rev 115/60
Electrical characteristics and functionsAN4043
Figure 8.High voltage gate drive die image
Each high voltage gate driver chip controls two IGBTs in half bridge topology, offering basic
functions such as dead time, interlocking, integrated bootstrap diode, and also advanced
features such as smart shutdown (patented), fault comparator, and a dedicated high
performance op amp for advanced current sensing. A schematic summary of the features by
device are listed in
Ta bl e 1
.
In this application note the main characteristics of a high voltage gate drive related to the
SLLIMM-nano are discussed. For a greater understanding, please refer to the AN2738
application note.
16/60Doc ID 022726 Rev 1
AN4043Electrical characteristics and functions
Figure 9.High voltage gate driver block diagram
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2.3.1 Logic inputs
The high voltage gate driver IC has two logic inputs, HIN and LIN, to separately control the
high-side and low-side outputs, HVG and LVG. Please refer to
logics by device.
In order to prevent any cross conduction between high-side and low-side IGBT, a safety time
(dead time) is introduced (see
management
All the logic inputs are provided with hysteresis (~1 V) for low noise sensitivity and are
TTL/CMOS 3.3 V compatible. Thanks to this low voltage interface logic compatibility, the
SLLIMM-nano can be used with any kind of high performance controller, such as
microcontrollers, DSPs or FPGAs.
As shown in the block diagrams of
pull-down (or pull-up) resistors in order to set a proper logic level in the case of interruption
in the logic lines. If logic inputs are left floating, the gate driver outputs LVG and HVG are set
to low level. This simplifies the interface circuit by eliminating the six external resistors,
therefore, saving cost, board space and number of components.
for further details).
Ta bl e 1
for the input signal
Section 2.3.4: Dead time and interlocking function
Figure 10
and
Figure 11
, the logic inputs have internal
Doc ID 022726 Rev 117/60
Electrical characteristics and functionsAN4043
Figure 10. Logic input configuration for the STGIPN3H60A
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The typical values of the integrated pull-up/down resistors are shown in
18/60Doc ID 022726 Rev 1
Ta bl e 6
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