Multi-bank reference design description and settings
1 Introduction
The M24LR64-R multi-bank reference design has been created to help users increase the
memory density of their Dual Interface EEPROM, and has been designed in a way that will
minimize the antenna size and the I²C interface footprint on the PCB.
STMicroelectronics has prepared two reference designs:
●ANT4-M24LR-A is a 2-bank reference design with a 128-Kbit EEPROM user memory
●ANT5-M24LR-A is a 4-bank reference design with a 256-Kbit EEPROM user memory
The basic principle is to connect several M24LR64-R devices in parallel on the same I²C bus
(in compliance with I²C specifications) and for them to share one single antenna.
This application note describes how the M24LR64-R Multi-Bank reference design works
from the schematics and design perspective, and explains how to configure and use it.
AN3250Designing an M24LR64-R multi-bank application
AI15106b
2
E0-E1SDA
V
CC
M24LR64-R
SCL
V
SS
AC0
AC1
2 Designing an M24LR64-R multi-bank application
2.1 Accessing several EEPROMs on the same I2C bus
The I2C specification allows the use of several devices on the same I2C bus, and this
reference design follows this specification. Please refer to the I
2
C specification and to the
M24LR64-R datasheet for more details.
Each device is accessed according to its value defined by the Device Select code.
Table 1.Device Select code description
Device type identifier
(1)
Chip Enable address
(2)
RW
b7b6b5b4b3b2b1b0
(3)
Device Select code1010E2
1. The most significant bit (b7) is sent first.
2. E0 and E1 are compared against the respective external pins on the memory device.
3. E2 is not connected to any external pin. It is however used to address the M24LR64-R system area as
described in the datasheet.
E1E0RW
The M24LR64-R offers two Chip Enable pins, E0 and E1. These signals are used to set the
values that are to be looked for on bits b2 and b1 of the 7-bit Device Select code.
Figure 4.Logic diagram
Table 2.Signal descriptions
Signal nameFunctionDirection
E0, E1Chip EnableInput
SDASerial DataI/O
SCLSerial ClockInput
AC0, AC1Antenna coilsI/O
Doc ID 17761 Rev 13/16
Designing an M24LR64-R multi-bank applicationAN3250
Ai12807a
V
CC
M24LR64
V
SS
E1
E0
0
V
CC
M24LR64
V
SS
E1
E0
1
V
CC
M24LR64
V
SS
E1
E0
2
V
CC
M24LR64
V
SS
E1
E0
3
I2C Bus
Table 2.Signal descriptions (continued)
Signal nameFunctionDirection
V
CC
V
SS
Supply voltage
Ground
E0 and E1 inputs must be tied to VCC (‘1’) or VSS (‘0’) to establish the Device Select code.
When not connected (left floating), these inputs are read as low (‘0’). Using bits E0 and E1
of the Device Select code, up to four M24LR64-R devices can be accessed on the same I
2
bus. This enables emulation of up to 256 Kbits of EEPROM.
In the configuration example shown in Figure 5, in order to access 256 Kbits of EEPROM,
four 64-Kbit M24LR64-R devices are connected to the same I
signals of each device are assigned in a way to create an unique I
2
C bus and the E0 and E1
2
C address for each
specific device.
Figure 5.Configuration example
C
M24LR64-R #0 (Bank 0)
Device addressed as (0,0): pin E0 connected to VSS and pin E1 connected to VSS.
Device type identifierChip Enable addressRW
b7b6b5b4b3b2b1b0
Device Select code1010E200RW
M24LR64-R #1 (Bank 1)
Device addressed as (0,1): pin E0 connected to VCC and pin E1 connected to VSS.
Device type identifierChip Enable addressRW
b7b6b5b4b3b2b1b0
Device Select code1010E201RW
4/16Doc ID 17761 Rev 1
AN3250Designing an M24LR64-R multi-bank application
Device addressed as (1,0): pin E0 connected to VSS and pin E1 connected to VCC.
Device type identifierChip Enable addressRW
b7b6b5b4b3b2b1b0
Device Select code1010E210RW
M24LR64-R #3 (Bank 3)
Device addressed as (1,1): pin E0 connected to VCC and pin E1 connected to VCC.
Device type identifierChip Enable addressRW
b7b6b5b4b3b2b1b0
Device Select code1010E211RW
To emulate a 256-Kbit device using four M24LR64-R devices, the 256 Kbits are dispatched
as follows:
●M24LR64 #0 will store the 1st block of 64-Kbit EEPROM memory area.
●M24LR64 #1 will store the 2nd block of 64-Kbit EEPROM memory area.
●M24LR64 #2 will store the 3rd block of 64-Kbit EEPROM memory area.
●M24LR64 #3 will store the 4th block of 64-Kbit EEPROM memory area.
2.2 Connecting several M24LR64-R devices on the same
inductive antenna
The RF interface of M24LR64 devices is based on a passive RFID technology operating at
13.56 MHz in compliance with ISO/IEC 15693 standards. The basic principles of this RF
technology and antenna design considerations are described in the following two application
notes:
●AN2972: Designing an antenna for the M24LR64-R dual interface I²C/RFID device
●AN3178: Using a surface mount inductor as an M24LRxx antenna
The basic principle of the M24LR64-R's antenna is very simple; the external antenna
inductance (L
INDUCTOR
internal tuning capacitance (C
MHz. This is because ISO/IEC 15693 RFID readers operate in the 13.56 MHz high
frequency band.
In this reference design, we connect a number n of M24LR64-R devices in parallel on the
same antenna. The resulting equivalent tuning capacitance (C
the tuning capacitance of a single M24LR64-R.
) that must be integrated on the PCB should match the M24LRxx's
TUNING_IC
C
TUNING_MULTI-BANK
) in order to create a circuit resonating at 13.56
TUNING_MULTI-BANK
= n x C
TUNING_IC
) is n times
Doc ID 17761 Rev 15/16
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