This document introduces a solution for industrial power supplies fed by a three-phase
mains. It uses a high voltage power MOSFET with 1500 V breakdown voltage to optimize
the operation of a quasi-resonant flyback converter based on the primary controller L6565.
The STEVAL-ISA034V1 demonstration board has been designed and developed for low
power applications. The board features two isolated outputs, 12 V and 5 V, and is capable of
delivering up to 10 W.
The board can be ordered through order code STEVAL-ISA034V1.
The STEVAL-ISA034V1 demonstration board is based on a quasi-resonant flyback
converter topology and uses the STP3N150 1500 V power MOSFET as the primary switch.
The STP3N150 employs STMicroelectronics’ proprietary high voltage Mesh Overlay
technology. Characteristic of this technology, the switch features very low R
low gate charge and high switching performance. The device is available in the TO-220, TO247 and TO-220FH packages.
The demonstration board is designed in accordance with the specifications in Ta b l e 1 .
Table 1.Main specifications
ParameterValue
Input voltage range185 to 460 Vac
Input frequency range50/60 Hz
Output 112 V @ 0.6 A
Output 25 V @ 0.55 A
Output power10 W
DS(on)
per area,
SafetyEN60950
EMIEN55014
The input section is equipped with two connectors: CON1 for 400 Vac input voltage, and
CON2 for 230 Vac input voltage. The output voltages are available on CON3, with a shared
ground between the two outputs.
The converter is controlled by the L6565, a primary controller for quasi-resonant ZVS (zerovoltage switching) flyback converters. The device is capable of controlling power variations
in the mains voltage by means of line voltage feed-forward. In light load conditions the
device features a special function which automatically lowers the operating frequency while
maintaining operation as close to ZVS as possible.In addition to very low startup and
quiescent currents, this feature helps to maintain low consumption from the mains in light
load conditions.
The device also includes a disable function, an on-chip filter on current sense, an error
amplifier with a precise reference voltage for primary regulation and effective two-level
overcurrent protection. The transformer reflected voltage is set to 400 V, providing enough
margin for leakage inductance voltage spikes. A small RCD clamper circuit is used to limit
excess voltage on the drain of the power MOSFET. During normal operation, the L6565 is
powered by the auxiliary winding of the transformer, via diode D7. A spike killer circuit for the
auxiliary voltage fluctuations is present, but not connected (Q2, C12, R15). The primary
current is measured using an external sensing resistor (R21) for current mode operation.
Output voltage regulation is performed using secondary feedback on the 5 V output.
The feedback network consists of a programmable voltage reference, TL431, driving an
optocoupler which ensures the required insulation between the primary and secondary
sections. The optotransistor drives the feedback pin (COMP), which controls the operation
of the device. LC filters have been added on both of the outputs to reduce the high
frequency ripple, using moderate output capacitor values.
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Demonstration board descriptionAN2936
The flyback transformer is a layer-type based on an E25/13/7 core and N27 ferrite,
manufactured by Tronic, and ensures safety insulation in accordance with standard
EN60950. The schematic of the board is shown inFigure 2. The power supply has been
built on a double-sided 35 µm PCB in FR-4, size 120 x 68 mm. The bill of material is
provided in Ta b l e 3 .
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AN2936Demonstration board description
Figure 2.Circuit schematic
12V @ 600 mA
5V @ 550 mA
J6
CON2
2
3
1
R24
nc
R25
nc
R22
R21
10k
C17
Co3
Co4
22u - 25V
22u - 10V
L6
D8
8
T1
1
10u
L7
10u
Co2
Co1
220u - 25V
220u - 10V
D9
STPS3L40S
STPS3L25S
7
25436
C8
R9
150K
TRANSFORMER
D5
STTH108
D4
R11
1n/2kV
STTH108
R10
150K
R19
2.2k
N1/N5V=87
Lp=15mH
N1/N12V=38
N1/Naux=30
Core material N67
Core shape E20 (E25)
nc
C16
M1
12
6.8n - nc
C15
2.2k - nc
R12
10
Q11 nc
R16
330n
C18
560
R23
R18
3.5
STP4N150
3
1k
R17
2.2
100p
C14
10k
n.c.
1
3
2
U3
TL431
R20
1k
U2
PC817
D6
1N4148
R7
330k
R8
330k
R5
1.8M
R6
1.8M
R26
1M
R27
1M
C22
NTC2
50E
D13
480-650VDC
D12
R281MR29
+
1N4007
1N4007
C23
4.7uF
10n-X2
C21
23
L11
1
4
C20
10n-X2
AC
AC
L8 1mH
L9 1mH
R15
8
5
7
6
GD
ZCD
VCC
GND
U1
VFF
INV
COMP2CS
3
1
4
R12
C10
1M
+
4.7uF
27 mH
D10
1N4007
AC
D11
1N4007
AC
C9
15k
12k
1n
47u
D7
1N4148
100n
C13
L6565
120k
R14
R13
27k
2.2n
C11
L10 1 mH
C19
2.2n - Y1
220p
C12
F4 1A
1
2
1
2
400Vac
CON2
CON1
230Vac
AM01331v1
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Demonstration board descriptionAN2936
1.1 Bill of materials
Table 2.Bill of materials
ReferenceValueDescription
C1 4.7 µF - 450 VElect. capacitor
C24.7 µF - 450 VElect. capacitor
C310 nF - 660 VPolip. capacitor X2
C410 nF - 660 VPolip. capacitor X2
C51 nF - 2 kVPolip. capacitor FKP
C647 µF - 50 VElec. capacitor
C71 nF - 50 VCeramic capacitor
C82.2 nFCeramic capacitor
C9220 pFCeramic capacitor
C10100 nFCeramic capacitor
C11100 pFCeramic capacitor
C12n.m.Ceramic capacitor
C13n.m.Ceramic capacitor
C14330 nFCeramic capacitor
C15n.m.Ceramic capacitor
C162.2 nFCeramic capacitor Y1
C17220 µF – 25 VElec. capacitor 85 °C
C18220 µF – 16 VElec. capacitor 85 °C
C1922 µF- 25 VElec. capacitor
C2022 µF- 25 VElec. capacitor
D1, D2, D3, D41N4007Rectifier 1000 V 1 A
D5STTH108Turboswitch diode 1 A-800 V - STMicroelectronics
D6STTH108Turboswitch diode 1 A-800 V - STMicroelectronics
D7LL4148/SOD-80SOD-80 general-purpose rectifier 75 V 200 mA
D8LL4148/SOD-80SOD-80 general-purpose rectifier 75 V 200 mA
D9STPS3L40SSchottky rectifier 3 A-40 V
D10STPS3L25SSchottky rectifier 3 A-25 V
L1, L2, L31 mH
L433 mH Common mode choke
L510 µHInductor
L610 µHInductor
NTC150 ΩNTC inrush current suppressor
F11 AFuse
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AN2936Demonstration board description
Table 2.Bill of materials (continued)
ReferenceValueDescription
R11 mΩResistor, metal film 0.25 W 5%, SMD
R21 mΩResistor, metal film 0.25 W 5%, SMD
R31 mΩResistor, metal film 0.25 W 5%, SMD
R41 mΩResistor, metal film 0.25 W 5%, SMD
R51.8 mΩResistor, metal film 0.25 W 5%, SMD
R61.8 mΩResistor, metal film 0.25 W 5%, SMD
R71.8 mΩResistor, metal film 0.25 W 5%, SMD
R81.8 mΩResistor, metal film 0.25 W 5%, SMD
R9330 kΩResistor, metal film 0.25 W 5%, SMD
R10330 kΩResistor, metal film 0.25 W 5%, SMD
R11150 kΩResistor, metal film 0.25 W 5%, SMD
R12150 kΩResistor, metal film 0.25 W 5%, SMD
R1310 Ω
R1412 kΩResistor, metal film 0.25 W 5%, SMD
R152.2 kΩ – n.m.Resistor, metal film 0.25 W 5%, SMD
U3TL431Programmable shunt voltage reference 1% - STMicroelectronics
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Demonstration board descriptionAN2936
Table 2.Bill of materials (continued)
ReferenceValueDescription
Q1STP3N150Power MOSFET 1500 V - 3 A - STMicroelectronics
Q2BC547Small signal PNP transistor
8/10
AN2936Related documents
2 Related documents
1.AN1326: L6565 quasi-resonant controller
3 Revision history
Table 3.Document revision history
DateRevisionChanges
16-Mar-20091Initial release.
9/10
AN2936
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