ST AN2783 Application note

AN2783

Application note

PM8800 demonstration kit for standard and high power PoE

PD interface and power supply, with auxiliary sources

Introduction

This document details the characteristics and performances of the PM8800 demonstration
kit which has been designed to cover a broad range of power over Ethernet (PoE)
applications. PM8800 is a highly integrated device embedding an IEEE802.3af compliant
powered device (PD) interface together with a PWM controller and support for auxiliary
sources.

Even though PM8800 can be configured to work in both isolated and non-isolated
topologies, this application note focuses on an isolated topology only, in two different output
power configurations (10 W and 20 W) and 2 different output voltages (5 V and 3.3 V).

The PM8800 demonstration kit supports diode as well as synchronous rectification.

Auxiliary sources can be connected to the board on 2 input points. One input allows
prevalence of the auxiliary sources with respect to the PoE, while the other input allows the
usage of a wall adaptor with voltage lower than the internal PoE UVLO threshold and still
benefits from the inherent inrush and DC current limit.

The above mentioned configurations are all supported by the PM8800 demonstration kit as
options on the same PCB. The bill of material (BOM) (see Section 5 on page 12) provides
the list of components to be mounted for each of the targeted configurations.

Figure 1. PM8800 demonstration kit

The high-power board appears on the left of the photo and standard board is on the right.

September 2008 Rev 2 1/47

www.st.com

Contents AN2783

Contents

1 Main features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2 Electrical specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 Demonstration kit schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Board layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.1 Input/output connectors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

4.2 Notes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

5 Bill of material . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

6 Power-up sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16

7 Input section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

7.1 Diode bridges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

7.2 Input capacitors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

7.3 Transient voltage suppression . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

8 PoE section . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

8.1 Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

8.2 Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

8.3 UVLO and power-on . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

8.4 Inrush current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

8.5 DC current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

8.6 AUXI input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

8.7 AUXII input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

9 Power transformer and operating input voltage . . . . . . . . . . . . . . . . . . 22

10 Power converter . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

10.1 Flyback continuous conduction mode . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

10.2 Main switch current and current sensing . . . . . . . . . . . . . . . . . . . . . . . . . 24

10.3 Main switch power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

2/47

AN2783 Contents

10.4 Rectifier diode dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

10.5 PM8800 internal power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26

11 Layout guidelines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

12 Test results . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

12.1 Efficiency measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

12.2 5 V high-power board measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

12.3 3.3 V standard-power board measurements . . . . . . . . . . . . . . . . . . . . . . 36

12.4 IEEE 802.3af compatibility test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42

Appendix A Schematic of high-power board . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44

Appendix B Schematic of standard-power board . . . . . . . . . . . . . . . . . . . . . . . . 45

Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46

3/47

List of figures AN2783

List of figures

Figure 1. PM8800 demonstration kit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Figure 2. Demonstration kit schematic. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Figure 3. Assembly view: top and bottom layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

Figure 4. Top layer. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 5. Inner layer 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 6. Inner layer 2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

Figure 7. Bottom layer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Figure 8. Inrush current limit vs. RIRL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19

Figure 9. DC current limit vs. RDC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Figure 10. Output power vs. VAUXII . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22

Figure 11. 5 V out - standard board with diode rectification. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29

Figure 12. 5 V out - high-power board with synchronous rectification . . . . . . . . . . . . . . . . . . . . . . . . . 29

Figure 13. 3.3 V out - standard board with diode rectification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30

Figure 14. 3.3 V out - high-power board with synchronous rectification . . . . . . . . . . . . . . . . . . . . . . . 30

Figure 15. Startup of the PM8800 demonstration kit with 5 V 1 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Figure 16. Startup of the PM8800 demonstration kit with 5 V 4 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Figure 17. Details of the inrush phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Figure 18. Details of the soft-start phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31

Figure 19. VDS and VGS of the primary MOSFET for 5 V 1 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Figure 20. VDS and VGS of the primary MOSFET for 5 V 4 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32

Figure 21. Details of the synchronous rectifier MOSFET voltage with 48 V and 4 A out . . . . . . . . . . 32

Figure 22. Output voltage ripple at 4 A output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33

Figure 23. Output voltage ripple at 4 A output current (1 sec persistence) . . . . . . . . . . . . . . . . . . . . . 33

Figure 24. Dynamic load 1 A to 4 A: output voltage (up) and output current (down) . . . . . . . . . . . . . 33

Figure 25. PM8800A response to a 6 A overload condition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Figure 26. PM8800A recovering from a 6 A overload condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Figure 27. PM8800A response to a short on the load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Figure 28. PM8800A recovering from a short on the load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34

Figure 29. Internal short on the secondary winding . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35

Figure 30. Switch between 48 V PoE and 24 V AUXII with 5 V at 2 A . . . . . . . . . . . . . . . . . . . . . . . . 35

Figure 31. back to 48 V removing the 24 V AUXII voltage with 5 V at 2 A . . . . . . . . . . . . . . . . . . . . . 35

Figure 32. Switch between 48 V PoE and 12 V AUXII with 5 V at 2 A . . . . . . . . . . . . . . . . . . . . . . . . 36

Figure 33. Back to 48 V removing the 12 V AUXII voltage with 5 V at 2 A . . . . . . . . . . . . . . . . . . . . . 36

Figure 34. Startup of the PM8800 demonstration kit with 3.3 V, 1 A . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Figure 35. Startup of the PM8800 demonstration kit with 3.3 V, 3 A . . . . . . . . . . . . . . . . . . . . . . . . . . 36

Figure 36. Details of the inrush phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Figure 37. Details of the soft-start phase . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Figure 38. VDS and VGS of the primary MOSFET for 3.3 V 1 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Figure 39. VDS and VGS of the primary MOSFET for 3.3 V 3 A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37

Figure 40. Details of the synchronous rectifier MOSFET voltage with 48 V and 3 A output current . . 38

Figure 41. Output voltage ripple at 3 A output current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38

Figure 42. Output voltage ripple at 3 A output current (1 sec persistence) . . . . . . . . . . . . . . . . . . . . . 38

Figure 43. Dynamic load 1 to 3 A: output voltage (up) and output current (down) . . . . . . . . . . . . . . . 39

Figure 44. PM8800A response to a 5 A overload condition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

Figure 45. PM8800A recovering from a 5 A overload condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39

Figure 46. PM8800A response to a short on the load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Figure 47. PM8800A recovering from a short on the load . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

Figure 48. Internal short on the secondary winding . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40

4/47

AN2783 List of figures

Figure 49. Switch between 48 V PoE and 24 V AUXII with 3.3 V at 2 A . . . . . . . . . . . . . . . . . . . . . . . 41

Figure 50. Back to 48 V removing the 24 V AUXII voltage with 3.3 V at 2 A . . . . . . . . . . . . . . . . . . . . 41

Figure 51. Switch between 48 V PoE and 12 V AUXII with 3.3 V at 2 A . . . . . . . . . . . . . . . . . . . . . . . 41

Figure 52. Back to 48 V removing the 12 V AUXII voltage with 3.3 V at 2 A . . . . . . . . . . . . . . . . . . . . 41

Figure 53. Schematic of the 3.3/5 Vout high power with synchronous rectification . . . . . . . . . . . . . . . 44

Figure 54. Schematic of the 3.3/5 Vout standard power with diode rectification . . . . . . . . . . . . . . . . . 45

5/47

Main features AN2783

1 Main features

The PM8800 demonstration kit has been designed to cover several PoE configurations with
easy customization.

● Basic configuration: (high-power applications)

– 5 V output

– Up to 4 A output

– 250 kHz operating switching frequency

– Flyback topology DCM/CCM

● Board size 70 x 90 mm

● Power Good indication

● Overall efficiency of 85% at full-load condition (Figure 12)

● Prevalence of the auxiliary source with respect to the PoE line (Section 8.7)

● 1500 Vrms isolation ensured by the power transformer

● Support for (see BOM options in Section 5):

– 5 V and 3.3V output

– diode or synchronous rectification

– standard IEEE802.3af or high-power applications

– non-isolated flyback topology

● Support for class 0-3 (IEEE802.3af) and class 4 (pre-standard modes)

The following 2 basic board configurations are addressed with the same PCB and referred
in the rest of the text as:

– Standard power: this configuration covers IEEE802.3af applications and it is

based on flyback topology with diode rectification.

– High power: this configuration targets applications with output power in excess of

the IEEE802.3af standard up to 20 W as output. This configuration is based on
flyback topology with synchronous rectification. The same configuration can be
used in PoE designs targeting high efficiency and/or with wide range auxiliary
input (down to 12 V with prevalence of the auxiliary with respect to PoE).

6/47

AN2783 Electrical specifications

2 Electrical specifications

Table 1. Specifications

Parameter 10 W 20 W

VIN 30 V to 60 V at 10 W output 30 V to 60 V at 20 W output

Auxiliary VIN AUXI 18 V to 60 V 18 V to 60 V

Auxiliary VIN AUXII 12 V to 60 V 12 V to 60 V

VOUT

Peak-to-peak output

ripple

3.35 V +/- 100 mV at 3 A 3.35 V +/- 100 mV at 6 A

5.05 V +/- 100 mV at 2 A 5.05 V +/- 100 mV at 4 A

10 mVpp 20 mVpp

Efficiency DC-DC only

Overall efficiency

Switching frequency 250 kHz typ +/- 10% 250 kHz typ +/- 10%

Dynamic current step

Maximum overshoot 200 mV 400 mV

Maximum overshoot

time duration

Maximum undershoot 200 mV 400 mV

Maximum undershoot

time duration

Maximum DC test

current

Minimum DC test

current

83% typ at 3.3 V 3 A 86% typ at 3.3 V 6 A

87% typ at 5 V 2 A 88% typ at 5 V 4 A

78% typ at 3.3 V 3 A 81% typ at 3.3 V 6 A

81% typ at 5 V 2 A 84% typ at 5 V 4 A

1- 3 A max at 3.3 V 1- 6 A max at 3.3 V

1- 2 A max at 5 V 1- 4 A max at 5 V

200 ms 300 ms

200 ms 300 ms

3.5 A at 3.3 V 6.5 A at 3.3 V

2.5 A at 5 V 4.5 A at 5 V

00

7/47

Demonstration kit schematic AN2783

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1206

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GND

1206

0.47 ohm

on the solder sid e

1812

2.2n

R2 0

NM

1206

C29

0

round that will be connected to th e

nal

470p

round plane close to pin 9 of PM880

D

D

D
G

GPnDGPn

G

G
P

P

P

P

GD

CS

VCC

GND

n

nD

n

nDG

13

14

9

10

12

11

CS

GD

VFB

VCC

GND

nPGD

PM8800

COMP

UXII

SS2A

3

4

I
I
X

XUAII

VIN

UA

HTSSO1 6

C36

0.1u NM

0805

Ex Pad

17

S

S

VIN

RCLAS

AUXI_IRL

DCCL

VS

6

5

7

8

VSS

DCC L

RCLASS

AUXI_IRL

100V

D27 NM

15k

1%

R37

1%

NM

0805

R35

GND po wer

NOTE

The AGND is a dedicated pla ne of si

A
SM

STPS1H100

V

C40

100p N M

R48

NM

D16

10k

R27

R36

SOD323

BAT46 J

TP9

TP13

NM

e is 50

is 0603 and tolera nce 5 %

is 0603 and the volta

NOTE for Ca paci tors

Where not indicated the bod

NOTE for Re sist ors

Where not indicated the bod

Sync Input

2KV

GND

AM01333v1

8/47

AN2783 Board layout

4 Board layout

Figure 3. Assembly view: top and bottom layer

9/47

Board layout AN2783

Figure 4. Top layer

Figure 5. Inner layer 1

Figure 6. Inner layer 2

10/47

AN2783 Board layout

Figure 7. Bottom layer

4.1 Input/output connectors

In Figure 3 the main input / output connections of the reference board are presented:

● J1 is the RJ45 connector for the PoE input, with data and power applied through the

CAT5 cable (as an alternative, a positive voltage between 30 V and 60 V can be applied
to test points TP1 + and TP2 -)

● J2 is the RJ45 data output

● J3 is the power jack for AUXI input (as an alternative, the test points TP 3 + and TP4 -

can be used)

● J4 is the power jack for AUXII input (as an alternative, the test points TP5 + and TP9 -

can be used)

● J5 is the DC output connector

4.2 Notes

● Please note that the use of TP1 and TP2 limits the voltage polarity applied and that

these points are after the data transformer and diode bridges.

● AUXII is not protected against reverse polarity applied to it.

● For synchronization tests the capacitor C40 =100 pF must be mounted. Please take

care when using test point TP13 because this is a high impedance point that can easily
pick up noise from the board.

● Resistive or electronic loads can be used as loads. Limit the output capacitance

externally applied in order to not impact the loop compensation.

● As an input source a DC power supply with 60 V and 2 A capability is required.

● For auxiliary inputs a DC source of 60 V and 3 A capability is recommended.

11/47

Bill of material AN2783

5 Bill of material

Table 2. Components for the 4 isolated configurations possible with the PM8800

Reference Description Pkg Manufacturer

5 V std power

3.3 V std power

3.3 V high power

Qty Qty Qty Qty

Printed circuit board

1 1 1 1 PM8800 eval kit

Capacitors

1 1 1 1 C1 Ceramic cap 0.1 µF 100 V 805 TDK

NM NM NM NM C36 Ceramic cap 0.1 µF 100 V 805 NM

NM NM NM NM C2, C7 Ceramic cap 200 V 805 NM

5 V high power

(1)

NM NM NM NM C8 Ceramic cap 2 kV 1812 NM

NM NM NM NM C9 Ceramic cap 805 NM

NM NM NM NM C10, C12 Ceramic cap 805 NM

1 1 1 1 C11 Ceramic cap 470 pF 50 V 805 Std

1 1 1 1 C13 Electrolytic cap 22 µF 100 V KX 8 x 10.2 SANYO

2 2 2 2 C14, C15 Ceramic cap 2.2 µF 100 V 1812 TDK

NM 1 NM 1 C17 Ceramic cap 2.2 µF 100 V 1812 TDK

NM NM NM NM C16 Ceramic cap 805 NM

2 2 NM NM C18, C19 Ceramic cap 10 µF 6.3 V 1206 TDK

3 3 NM NM

NM NM 2 2 C18, C19 Ceramic cap 10 µF 16 V 1206 TDK

NM NM 3 3

NM NM NM NM C22, C38 Ceramic cap 1206 NM

1 1 1 1 C24 Electrolytic cap 330 µF 6.3 V EX 8 x 10.5 SANYO

2 2 2 2 C25, C30 Ceramic cap 1 µF 16 V 603 TDK

5555

1 1 1 1 C29 Ceramic cap 2.2 nF 2 kV 1812 TDK

C20, C21,

C23

C20, C21,

C23

C26, C27,
C28, C34,

C39

Ceramic cap 10 µF 6.3 V 1206 TDK

Ceramic cap 10 µF 16 V 1206 TDK

Ceramic cap 0.1 µF 50 V 603 Std

NM NM NM NM C31 Ceramic cap 603 Std

1 1 1 1 C32 Ceramic cap 0.1 µF 50 V 603 Std

12/47

AN2783 Bill of material

Table 2. Components for the 4 isolated configurations possible with the PM8800 (continued)

Reference Description Pkg Manufacturer

5 V std power

3.3 V std power

3.3 V high power

Qty Qty Qty Qty

1 1 1 1 C33 Ceramic cap 470 pF 50 V 603 Std

1 NM 1 NM C35 Ceramic cap 1 nF 50 V 603 Std

NM 1 NM 1 C35 Ceramic cap 22 nF 50 V 603 Std

1 1 1 1 C37 Ceramic cap 4.7 nF 50 V 603 Std

NM NM NM NM C40 Ceramic cap 100 pF 50 V 603 Std

1 1 1 1 C41 Ceramic cap 0.1 µF 100 V 805 TDK

Diodes

NM NM NM NM D1, D2 Diode bridge DF01S Dip Diodes

2 NM 2 NM D1A, D2A Diode bridge HD01 MiniDip Diodes

1 1 1 1 D3 Diode SMAJ58A SMA STMicroelectronics

5 V high power

2 2 2 2 D4, D7 Diode STTH302S SMC STMicroelectronics

1 1 1 1 D5 Diode Zener BZX84C15 SOT23 Std

NM NM NM NM D6 Diode BAT46J SOT323 STMicroelectronics

1 NM 1 NM D8 Diode STPS15L30CB DPACK - TO252 STMicroelectronics

1 1 1 1 D9 Diode SMAJ40A SMA STMicroelectronics

1 1 1 1 D10 Diode STPR120A SMA STMicroelectronics

2222 D11, D15

2 2 2 2 D12, D13 Diode Zener BZX84C18 SOT23 Std

1 1 1 1 D14 Diode BAT46J SOT323 STMicroelectronics

1 1 1 1 D16 Diode BAS316 SOT323 Std

NM NM NM NM D17 Diode BAT46J SOT323 STMicroelectronics

NM 8 NM 8 D18 : D25 Diode STPS1H100A SMA STMicroelectronics

NM 1 NM 1 D26 Diode BAS316 SOT323 Std

NM NM NM NM D27 STPS1H100A SMA STMicroelectronics

Connectors

2 2 2 2 J1, J2 Shielded RJ45 8-pole THT

2 2 2 2 J3, J4 DC power jack THT RAPC722 THT

1 1 1 1 J5 DC power connector 2-pole pitch 5.08

Diode green LED Toshiba

TLGE1100B

SMD Toshiba

Inductors

13/47

Bill of material AN2783

Table 2. Components for the 4 isolated configurations possible with the PM8800 (continued)

Reference Description Pkg Manufacturer

5 V std power

3.3 V std power

3.3 V high power

Qty Qty Qty Qty

1 1 1 1 L1 Inductor 3.3 µH ME3220-332ML Coilcraft

5 V high power

1NM1NM L2

NM 1 NM 1 L3

MOSFETs

1 1 1 1 Q1 Mosfet STS10PF30L SO-8 STMicroelectronics

NM 1 NM 1 Q2 Mosfet STSJ60NH3LL PowerSO-8 STMicroelectronics

1 NM 1 NM Q3 Mosfet STD5N20L DPACK - TO252 STMicroelectronics

NM 1 NM 1 Q3 Mosfet STD22NM20M DPACK - TO252 STMicroelectronics

Resistors

1 1 1 1 R1 Resistor chip 0 Ω 805 Std

NM NM NM NM R2:R7, R35 Resistor chip 805 Std

NM NM NM NM R8, R9 Resistor chip 2.2 Ω 2512 Std

2 2 2 2 R11, R15 Resistor chip 15 kΩ 805 Std

1111 R10 Resistor chip 330 kΩ 805 Std

1 1 1 1 R12 Resistor chip 33 kΩ 805 Std

1111 R13 Resistor chip 15 Ω 1206 Std

NM NM NM NM

R14, R16,

R20, R41

Inductor 0.33 µH LPS4012-

331L

Inductor 0.33 µH DO1813H-

331ML

Resistor chip 1206 Std

Coilcraft

Coilcraft

1111 R17 Resistor chip 1 kΩ 603 Std

1111 R18 Resistor chip 10 Ω 603 Std

1 1 1 1 R19 Resistor chip 3K3 603 Std

1 1 1 1 R21 Resistor chip 88K7 1% 603 Std

NM NM NM NM

3333

2 2 2 2 R24, R25 Resistor chip 0 Ω 603 Std

1111 R26 Resistor chip 10 Ω 603 Std

1111 R28 Resistor chip 1 kΩ 603 Std

1111 R29 Resistor chip 1 kΩ 603 Std

14/47

R22, R34,

R36

R23, R27,

R38

Resistor chip 603 Std

Resistor chip 10 kΩ 603 Std

AN2783 Bill of material

Table 2. Components for the 4 isolated configurations possible with the PM8800 (continued)

Reference Description Pkg Manufacturer

5 V std power

3.3 V std power

3.3 V high power

Qty Qty Qty Qty

1 1 1 1 R30 Resistor chip 0 Ω 1206 Std

1111 R31 Resistor chip 10 Ω 805 Std

1 1 1 1 R32 Resistor chip 21 kΩ 1% 603 Std

1 1 1 1 R33 Resistor chip 100 Ω 603 Std

NM 1 NM 1 R37 Resistor chip 15 kΩ 1% 603 Std

2 2 2 2 R39, R40 Resistor chip 0R47 1206 Std

NM NM NM NM R20, R41 Resistor chip 0 Ω 1206 Std

1 1 1 1 R42 Resistor chip 0 Ω 603 Std

1 1 1 1 R43 Resistor chip 10 kΩ 1% 603 Std

5 V high power

1 1 1 1 R44 Resistor chip 12K4 1% 603 Std

NM NM NM NM R46 Resistor chip 0R47 1206 Std

NM NM 1 1 R47 Resistor chip 15 kΩ 1% 603 Std

NM NM NM NM R48 Resistor chip 10 kΩ 1% 603 Std

1 NM 1 NM R49 Resistor chip 0 Ω 603 Std

1 1 1 1 R50 Resistor chip 0 Ω 603 Std

Transformers

NM 1 NM NM T1 Transformer EFD17 FA2706-BL Coilcraft

NM NM NM 1 T1 Transformer EFD17 FA2707-BL Coilcraft

1 NM NM NM T2 Transformer EP13 PoE13P-33L Coilcraft

NM NM 1 NM T2 Transformer EP13 PoE13P-50L Coilcraft

1NM1NM T3

Transformer H2019 / TLA-

6T127LF

Pulse/TDK

NM 1 NM 1 T4 Transformer ETH1-230LD Coilcraft

13 13 13 13 TP1:TP13 Test point 5013 Keystone

ICs

1 1 1 1 U1 PM8800 HTSSOP16 STMicroelectronics

1 1 1 1 U2 Optocoupler PC3H7 Sharp

1 1 1 1 U3 TSA431AILT SOT23-5 STMicroelectronics

1. PM8800 demonstration kit printed circuit board has been manufactured with the following Cu layer thicknesses:

Layer 1, 4: 35 µm (1 oz.) (top / bottom side)

Layer 2, 3: 35 µm (1 oz.) (power plane)

15/47