ST AN2683 Application note

AN2683
Application note
Compact dual output point of load converter
based on the PM6680 step-down controller
Introduction
This application note demonstrates the performance of the PM6680 dual step-down controller by implementing a two output point of load converter in a small printed circuit board footprint. Utilizing constant on-time architecture and featuring a no-audio skip mode of operation, a common bus voltage that ranges between 10 to 16 V at 10.5 amps and 1.8 V no-audio skip feature significantly improves efficiency at light load. Using surface mount components on both the top and bottom of the circuit board and featuring ceramic output capacitors, the area needed for the converter measures only 1.0 by 1.25 inches (25.4 by
37.75 mm). The method for component value dimensioning is described along with the schematic and construction details. Typical efficiencies and functional test data are also presented.

Figure 1. PM6680 - top and bottom view

at 2.5 amps for a total output power level of 15 watts. The unique
DC
is converted to 1.0 VDC
DC
April 2008 Rev 1 1/38
www.st.com
Contents AN2683
Contents
1 Main characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.1 Input voltage range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.2 Output ripple voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.3 Switching frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.4 Output overload/short circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2 Circuit description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Construction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4 Functional testing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
4.1 Input/output voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
4.2 Ripple/noise voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
4.3 Load transient overshoot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
4.4 Output current limit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
4.5 Output short circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
4.6 Input under voltage lockout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
5 Bill of material . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
2/38
AN2683 List of figures
List of figures
Figure 1. PM6680 - top and bottom view . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Figure 2. Circuit board schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 3. Components of virtual ESR network. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Figure 4. Top layer component placement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5. Top layer copper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 6. Inner layer 1 showing additional power traces . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 7. Power ground layer (inner layer 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 8. Signal ground layer (inner layer 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 9. Bottom layer components placement (mirrored). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 10. Bottom layer copper (mirrored). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 11. Inner layer 4 (mirrored) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 12. Efficiency vs. load current in PWM mode (1.0 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 13. Efficiency vs. load current in NA-skip mode (1.0 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 14. Efficiency vs. load current in PWM mode (1.8 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 15. Efficiency vs. load current in NA-skip mode (1.8 V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 16. V Figure 17. V Figure 18. V Figure 19. V Figure 20. V Figure 21. V
output - 100% to 50% load change (20µs/div) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
DC
output - 50% to 100% load change (20µs/div) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
DC
output - 20% to 80% step load change (50µs/div). . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
DC
output - 100% to 50% load change (20µs/div) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
DC
output - 50% to 100% load change (20µs/div) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
DC
output - 20% to 80% step load change (50µs/div). . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
DC
3/38
List of tables AN2683
List of tables
Table 1. Input voltage range 10 - 16 VDC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 2. 1.0 V Table 3. 1.8 V Table 4. 1.0 V Table 5. 1.8 V Table 6. 1.0 V Table 7. 1.8 V Table 8. 1.0 V Table 9. 1.8 V Table 10. 1.0 V Table 11. 1.8 V
Table 12. Part list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 13. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DC
output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DC
output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DC
output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
DC
output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
DC
output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
DC
output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
DC
output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
DC
output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
DC
output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
DC
4/38
AN2683 Main characteristics

1 Main characteristics

1.1 Input voltage range

Table 1. Input voltage range 10 - 16 V
Output Nominal voltage VDC Max. current amp Regulation %
11.8 2.5 0.44
2 1.0 10.5 2.6
1. Regulation over entire line and load range

1.2 Output ripple voltage

Output 1: 45 mV p-p at maximum output current
Output 2: 30 mV p-p at maximum output current

1.3 Switching frequency

Output 1: 1 - 300 kHz
Output 2: 2 - 400 kHz

1.4 Output overload/short circuit

Output 1: nominal trip level 3.37 A (135%)
Output 2: nominal trip level 13.65 A (130%)
DC
(1)
Protection is latched. Power must be cycled to reset.
5/38
Circuit description AN2683

2 Circuit description

The PM6680 contains all the control circuitry needed to implement two independent step­down synchronous buck regulators using the constant on-time method. The constant on­time method, an improved variant of hysteretic control, provides superior transient response to changes of input voltage and load levels. One of the big advantages of this control method is that it can provide this quick response without the use of an error amplifier which in turn eliminates the need for frequency compensation.
As shown in the photographs (Figure 1) all the parts used are surface mount type including the inductors. The circuit board is a multiple layer type consisting of six layers. The top two layers are power routing, the middle two are ground layers split as power and signal, and the bottom two are signal routing layers. In this design, in order to have a low inductor value for the higher current 10.5 A output side, the PM6680 runs in its intermediate range with output one running at 300 kHz and output two running at 400 kHz. So as a consequence the 2.5 A output will run at 300 kHz. With the switching frequencies established the dimensions of the other components can be defined.
6/38
AN2683 Circuit description

Figure 2. Circuit board schematic

Vout 1 - 1.8 VDC @ 2.5 A
QC
P5
R15
10.0k
R16
D2
Open
A
Q3
3
750R
17
Csense1
U1
1
432
V5SW
PM6680
SGnd1
12
R12
1 2
29
30
Out1
Comp1
Out28PGnd14Csense2
2
10.0k
QC
P6
2.55k
C13
330pF
C14
22pF
28
26
5
En2
4
FB1
Shdn
En1
Pgood1
18
25
Vref
32
Skip
C18
24
0.1uF
Fsel
3
nc
6
Pgood2
FB27SGnd216Comp2
27
C12
22pF
C8
12
R17
110k
R4
3R92
1/4W
12
10 uF
12
C4
1%
C7
10 uF
12
R18
C17
R3
1%
47R5 1/8W
0.22uF
C3
0.1uF
C5
4.7uF
12
C16
47uF
C10
1.8nF
R10
3.74k
1 2
STS8DNF3LL
8
7
C1
R1
10R0
R2
432
0.1uF
23
18
31
19
9
10R0
C2
0.1uF
18
30.0k
100pF
D1BAT54A
12
K2
A
K1
12
C21
1uF
C22
4.7uF
2.5 uH
MSS1038
L2
R9
57.6k
1 2
K
5
6
2
4
1
R6
1 2
21
15
20
22
Boot1
Lgate1
Hgate1
Phase1
LD05
Vcc
Vin
Boot2
Phase2
Hgate2
Lgate2
12
11
10
13
R5
750R
1 2
C6
10 uF
P1
P2
QC
QC
-
+
Vin 10.2 - 16.0 VDC
Q1
STS12NH3LL
765
R7
26.1k
1 2
0.7uH
R8
5.11k
1 2
P3
MLC1550L1
C9 1.8n F
100uF
C19
100uF
C15
47uF
C20
12
R13
QC
765
Q2
A K
D3
Open
P4
QC
2
1
R14
1.10k
10.0k
C11
STS25NH3LL
330pF
R11
1.91k
1 2
Vout2 - 1.0 VDC @ 10.5 A
7/38
Circuit description AN2683
As a starting point for the value of the inductors we look at the full load current (Ifl) for each output and let the inductor ripple (I value of 30 percent is used.
I
= I
* 0.3
r
fl
for
Output 1: I
Output 2: I
Then the values of the inductors are calculated using the formula:
Equation 1:
= 0.75 A
r
= 3.15 A
r
) current equal 20 to 30 percent of it. For this design a
r
VinV
L
------------------------ -
f
swIr
out
=
V
out
---------- -
V
in
where V frequency.
So for input 1:
Equation 2
and for output 2:
Equation 3
The output filter capacitors are roughly approximated so that the change in output voltage (∆V output voltage change of two to three percent of the total output voltage is considered acceptable. The formula used is:
is the nominal input voltage, V
in
12 1.8
----------------------------------------
L
300kHz 0.75
----------------------------------------
L
400kHz 3.15
) during a positive load transient (load is reduced) is minimized. For this design an
out
the output voltage and fsw the switching
out
1.8
------- -
6.8µH==
12
12 1
12
------
1
0.7µH==
Equation 4
----------------------------------------------------------------
C
>
2VinV
⋅⋅
8/38
LI
()ΛV
2
()
fl
out
out
AN2683 Circuit description
For output 1 a ∆V
Equation 5
This is a nonstandard value so a 47 µF is used. For output 2 a ∆V
Equation 6
As the formula indicates the capacitor value should be greater than that calculated. Even though the board area is small, this section allows the use of ceramic capacitors that are comprised of two 100 µF and one 47 µF all in parallel and which still fit in the required footprint.
of 2.5% of 1.8 VDC or 45 mV is used, thus:
out
6.8µH2.5()
46.2µF
of 2% of 1.0 VDC or 20 mV is used:
out
175µF
----------------------------------------------------------
>
2121.8()0.045⋅⋅
0.7µH 10.5()
----------------------------------------------------------
>
2121.0()0.020⋅⋅
2
2
With these values of capacitors the ripple voltage can be checked. This is dominated by the equivalent series resistance (ESR) of the capacitors. The ESR must be equal or less than the value calculated by:
Equation 7:
V
r
ESR
where V capacitors is given in their datasheets at the frequency they are used at as shown in the graphs. The value is basically the same at both 300 and 400 kHz. For the 47 µF the ESR is 2 mΩ and for the 100 µF it is 1.5 mΩ. With these values we can calculate the ripple voltage V
r
Equation 8:
by:
is the output ripple voltage and Ir is the inductor ripple current. The ESR for the
r
V
r
-----
I
r
IrESR=
9/38
Circuit description AN2683
for output 1:
Equation 9
0.75A 2m 1.5mV=
for output 2:
Equation 10
3.15A 545µΩ 1.9mV=
These values conform to the specification. They are higher in a practical circuit because of parasitic inductance and loop resistance. Good circuit board layout techniques are essential. Additionally, because of the constant on-time control, the system regulates the output voltage by the valley value of the ripple voltage. A minimum amount of ripple voltage of 30 mV should be on the comp pin to accomplish this. Since the calculated ripple voltage is much lower than this, an additional circuit called the virtual ESR network is incorporated to provide the additional voltage. Before addressing this design, the current limit resistor values will be established. In this design the R implement the current limit. For output 1 with its relatively low output current the MOSFET chosen was the STS8DNF3LL with a nominal R dual, that is two MOSFETs are contained in the same SO-8 package realizing further circuit board space savings. The current limit is a valley type that operates during the conduction of the low side MOSFET. A 100 µA internal current generator connected to the C along with a resistor establishes a voltage to which the voltage generated by the R compared. If the R
voltage is greater, then the voltage at the C
DS(on)
of a new conduction cycle is inhibited. The value of Rc
of the lower MOSFETS is used to
DS(on)
of 18 mΩ. This particular part is a
DS(on)
pin the generation
is determined by:
sense
sense
sense
pin
DS(on)
is
Equation 11:
Rc
sense
The 18 mΩ value for R
is a nominal 25 °C number. As current is switched through the
DS(on)
device and the ambient is raised, the R 140% is used. Targeting the maximum output current (I
0.750 A the valley current value is:
10/38
R
DS on()Ivalley
----------------------------------------- -=
100µA
increases. An increase of approximately
DS(on)
) at 3.375 A and having a Ir of
outmax
AN2683 Circuit description
Equation 12
I
r
---=
2
3.0A=
then:
Equation 13
I
valley
3.375A
I
out max()
0.750
-------------- -
2
R
Equation 14
csense
is then:
25m 3.0A
----------------------------------- - 750= 100µA
For output 2 the current levels are substantially higher than output 1 and two discrete MOSFETS must be used. With a nominal input voltage of 12 volts and a one volt output the low side MOSFET is conducting over 90 percent of the time. This means that the R the low side MOSFET must be as low as possible. For this design the STS25NH3LL MOSFET with a nominal 3.2 m on resistance is used. Because of the high current and duty cycle an R the output 2 maximum current at 13.65 A the valley current is:
Equation 15
multiplier of 200% for the R
DS(on)
13.65A
3.15A
--------------- -
2
calculation is used. Again targeting
csense
12.075A=
DS(on)
of
R
Equation 16
for output 2 then is:
csense
6.4m 12.75A
--------------------------------------------
100µA
11/38
773=
Circuit description AN2683
With the maximum output currents established attention can be redirected at designing the virtual ESR network. As mentioned earlier, the ripple voltage should be greater than 30 mV and range between 30 to 50 mV. To derive the necessary minimum value of the virtual ESR (VESR) to produce the ripple voltage the following formula is used:
Equation 17
0.05V
⎛⎞
--------------- -
⎝⎠
I
r
=
ESR
2m 64.6mΩ=
cout
for output 1:
Equation 18
VESR
min()
0.05V
⎛⎞
--------------- -
⎝⎠
0.75A
for output 2:
Equation 19
The total ESR (ESR output capacitor.
for output 1:
Equation 20
for output 2:
Equation 21
0.05V
⎛⎞
--------------- -
⎝⎠
3.15A
) is the sum of the virtual ESR (VESR) and the ESR (ESR
tot
0.545m 15.3m=
64.6m 2m 66.6m=+
cout
) of the
15.3m 0.545m 15.8mΩ=+
12/38
AN2683 Circuit description
The first component to be dimensioned in the virtual ESR network is C
Figure 3 below. Before this can be done the corner frequency (f
must be determined by:
Equation 22
out
1
ESR
tot
f
-------------------------------------=
Z
2πC

Figure 3. Components of virtual ESR network

) of the output capacitor
z
as shown in
int
for output 1:
Equation 23
--------------------------------------------------- 50.56kHz=
1
2π 47µF67m⋅⋅
13/38
Circuit description AN2683
for output 2:
Equation 24
--------------------------------------------------------------- 41.46kHz=
1
2π 247µF 15.54m⋅⋅
With f
established the stability of the system needs to be verified. The system is stable if the
z
switching frequency (f
for output 1:
Equation 25
) is greater than 4 times the corner frequency (fz) of C
sw
50.56kHz 4 202.2kHz=
Equation 26
202.2kHz 300kHz< OK
; fsw > fz x 4.
out
for output 2:
Equation 27
41.46kHz 4 165.8kHz=
Equation 28
165.8kHz 400kHz< OK
The value of C from the computations is the value that should be used. In the formulas for calculating C the following constants are used: gm = 50 µs (the transconductance of the integrator amplifier); k = 4; V
is actually computed three different ways. The maximum value that results
int
= 0.9 V (internal reference voltage).
r
int
14/38
AN2683 Circuit description
Equation 29
C
for output 1:
Equation 30
or
Equation 31
or
int
fsw
⎛⎞
2π
--------- fz–
⎝⎠
k
gm
--------------------------------
-------------------------------------------------------------------------
2π
V
r
---------- -
> or
V
out
50µs
300kHz
⎛⎞
--------------------- 50.56kHz
⎝⎠
4
50µs
----------------------------------------
2π 50.56kHz
gm
----------------- -
2π fz⋅
0.9V
------------
78.7pF=
1.8V
---------- -
or
V
0.9V
------------
162.8pF=
1.8V
V
out
6µAC
r
-------------------------------- -
I
out max()
----------------------
out
4
I
r
-- -+
2
Equation 32
for output 2
Equation 33
or
6µA47µF
------------------------------------------ 231.3pF=
3.375A
-------------------
4
-------------------------------------------------------------------------
⎛⎞
2π
⎝⎠
50µs
400kHz
--------------------- 41.46kHz– 4
0.75A
--------------- -+
2
0.9V
------------
122.4pF=
1.0V
15/38
Circuit description AN2683
Equation 34
50µs
----------------------------------------
2π 41.46kHz
or
Equation 35
6µA 247µF
------------------------------------------ 297.1pF=
13.65A
-------------------
4
Standard values must be used. In both cases a value rounded up to 330 pF will be used for C
. The next part of the network to be calculated is the capacitor C
int
part is straightforward which is:
Equation 36
C
filt
0.9V
------------
172.8pF=
1.0V
3.15A
--------------- -+
2
C
int
----------------------------------=
. The formula for this
filt
1q()
q
Where q is an attenuation factor equal to 0.95.
Since C
Equation 37
is the same for both outputs C
int
330pF 1 0.95()
-------------------------------------------------- 17.3pF=
is the same for both outputs:
filt
0.95
A standard value of 22 pF is used. Building on the previous calculations the value of R the next part to be established. The formula for R
Equation 38
R
------------------------------------------------------------------------=
int
2π 10 fsw
⋅⋅ ⋅
is given below:
int
1
C
int
--------------------------
C
+
int
C
C
filt
filt
int
is
16/38
AN2683 Circuit description
for output 1:
Equation 39
R
using standard value 2.55 k
for output 2:
Equation 40
R
using standard value 1.91 k
Then, the value of the C of the virtual ESR network is calculated. It is simply:
Equation 41
------------------------------------------------------------------------------------------------
int
2π 10 300kHz
⋅⋅
------------------------------------------------------------------------------------------------
int
2π 10 400kHz
⋅⋅
1
330pF 22pF
---------------------------------------
330pF 22pF+
1
330pF 22pF
---------------------------------------
330pF 22pF+
CC
int
2570==
1929==
5=
Since C
Equation 42
is the same for both outputs:
int
C 330pF 5 1650pF==
Use standard value 1.8 nF.
Next, the R value of the network is established. This is determined by the formula:
Equation 43
------------------------------=
ESR
L
tot
C
R
17/38
Circuit description AN2683
for output 1:
Equation 44
6.8µH
--------------------------------------- 58.12K= 65m 1.8nF
for output 2:
Equation 45
0.7µH
--------------------------------------- 25.92K= 15m 1.8nF
The standard value of 57.6 KΩ can be used for output 1 and 26.1 KΩ for output 2. Finally the last component of the virtual ESR network R1 is computed with the formula:
Equation 46
for output 1:
Equation 47
for output 2:
Equation 48
1
⎛⎞
----------- -
R
⎝⎠
Cπf
1
----------- -
Cπf
z
z
57.6K
R1
-----------------------------=
R
⎛⎞
----------------------------------------------
⎝⎠
1.8nFπ50.56kHz
1
-------------------------------------------------------------------------------
57.6K
----------------------------------------------
1
1.8nFπ50.56kHz
26.1K
⎛⎞
----------------------------------------------
⎝⎠
1.8nFπ41.46kHz
1
-------------------------------------------------------------------------------
26.1K
----------------------------------------------
1
1.8nFπ41.46kHz
3723=
5098=
The standard value of 3.74 KΩ can be used for output 1 and 5.11 KΩ for output 2. With the design of the virtual ESR complete the only other output components to be determined are the resistor dividers that connect to the feedback pins FB1 and FB2. With an internal reference voltage (V
18/38
) of 0.9 volts the determination of the values is straightforward by:
r
AN2683 Circuit description
Equation 49
V
R2
outVr
----------------------=
V
------- -
r
R1
where R1 is the resistor connecting the feedback pin to ground (resistors R14 and R16 in the schematic) and R2 is the resistor connecting the output to the feedback pin (resistors R13 and R15 in the schematic). The value for R1 is chosen as 10.0 KΩ for both outputs. The value for R2 is then:
for output 1:
Equation 50
1.8V 0.9V
R2
-------------------------------
0.9V
-------------- -
10K==
10K
for output 2:
Equation 51
1.0V 0.9V
R2
-------------------------------
0.9V
-------------- -
1.11K==
10K
Use standard values 10.0 KΩ ohm for R15 and 1.10 KΩ ohm for R13. With the output component values determined it is important not to overlook the dimensioning of input components critical to proper operation. These are the input capacitors that provide the high frequency input currents needed by the converters. Locate these capacitors as close as possible to the drain of the upper MOSFET and also make sure to minimize the inductance to the other power components on the power ground plane. The ripple current (I should meet or exceed the value as computed below:
Equation 52
I
where D is the duty cycle of the converter and is given by:
D
r
1Iout1
2
1D
()⋅⋅ D
1
2Iout2
2
1D
()⋅⋅+=
2
) ratings
r
19/38
Circuit description AN2683
Equation 53
V
D
out
---------- -=
V
in
and I
For output 1 D1 is:
Equation 54
For output 2 D2 is:
Equation 55
So then we have:
Equation 56
is the maximum output current of the converter.
out
1.8V
------------ 0.15= 12V
1.0V
------------ 0.083= 12V
I
20/38
0.15 3.375
r
2
10.15()⋅⋅ 0.083 13.65
2
1 0.083()⋅⋅+ 3.95A==
AN2683 Construction

3 Construction

With the components dimensioned the construction of the circuit board can be considered. With this type of high frequency converter separate power and signal grounds are a must. Additionally, the small board area necessitated component placement on both sides and the use of additional layers for routing the signal interconnects and providing lower conductor resistance in the heavy current paths. In Figure 4. below the top layer component placement is shown. The top layer components are comprised of the power handling ones such as the MOSFETS and inductors. Along with the power component placement is Figure 5 that shows the top copper power traces. The first inner layer shown in Figure 6 is a layer that has redundant power traces to lower resistance in the high current paths. The power ground and signal ground layers are shown in Figure 7 and 8 respectively. Care must be taken that they connect at only one point close to pin 14 of the PM6680. The component placement for the bottom layer is shown in Figure 9, these are the parts that do the signal conditioning and connect to the PM6680 controller. Of special note on the bottom layer copper shown in
Figure 10, is the square copper island under U1 (the PM6680). This island connects to the
thermal sink contact that is on the bottom of the package. A requirement for proper operation is that this pad be connected to signal ground. As shown in Figure 11, which is the fourth inner layer used for additional signal routing, a matrix of nine vias are used to make the connection to the signal ground layer. The board uses 1-ounce copper on all layers. While not necessary for the signal traces, keeping the copper weight even on all the layers reduces the chances of the board warping during the manufacturing process.

Figure 4. Top layer component placement

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Construction AN2683

Figure 5. Top layer copper

Figure 6. Inner layer 1 showing additional power traces

22/38
AN2683 Construction

Figure 7. Power ground layer (inner layer 2)

Figure 8. Signal ground layer (inner layer 3)

23/38
Construction AN2683

Figure 9. Bottom layer components placement (mirrored)

Figure 10. Bottom layer copper (mirrored)

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AN2683 Construction

Figure 11. Inner layer 4 (mirrored)

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Functional testing AN2683

4 Functional testing

Using the component values calculated the demonstration board's efficiency was evaluated. Each converter was tested individually with the idle converter disabled by grounding its enable pin so that the power consumed by the idle converter's MOSFET driver section would not be included in the input power calculation. The efficiency of each section was measured in two different modes of operation, normal PWM and no-audible skip mode. In all cases the input voltage was set to 12.0 V

Figure 12. Efficiency vs. load current in PWM mode (1.0 V)

1.0V Ef f vs Load Current in PWM mode
100
90 80 70 60 50 40
% Efficiency
30 20 10
0
01234567891011
Load Current
DC
.
Eff vs Load I

Figure 13. Efficiency vs. load current in NA-skip mode (1.0 V)

1.0V Eff vs Load Current i n NA - Ski p mode
100
90 80 70 60 50 40
% Effi ciency
30 20 10
0
01234567891011
Load Curr ent
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Eff vs Load I
AN2683 Functional testing
As can be seen at significant load current the efficiency for the 1.0 V output averages in the lower eighty percent area. Additionally, the graph for no-audible skip mode shows the advantage of running in this mode. By using the current zero-crossing detector the condition of negative current that occurs at light load is sensed. The control circuit then keeps the average current equal to the load current by skipping cycles. The result is higher efficiency at light load. As the load is increased and the inductor current does not go to zero, normal PWM operation is resumed.

Figure 14. Efficiency vs. load current in PWM mode (1.8 V)

1.8V Ef f vs Loa d Curr e nt i n PW M m ode
100
90 80 70 60 50 40
% Effi ci ency
30 20 10
0
0123
Load Current
Eff vs Load I

Figure 15. Efficiency vs. load current in NA-skip mode (1.8 V)

1.8V Ef f vs Load Cur r ent i n NA - Skip mode
100
90 80 70 60 50 40
% Effi ci ency
30 20 10
0
0123
Load Current
Eff vs Load I
27/38
Functional testing AN2683
The graphs in Figure 14 and 15 show that the 1.8 V output has better efficiency than the 1.0 V output, in the high eighties at high current levels. Along with the efficiency measurements further functional testing was conducted as outlined in the following sections.

4.1 Input/output voltage

The input voltage was swept from 10.2 to 16 VDC at the load levels indicated. The output voltage was recorded at each level and did not vary more than 1 mV over the entire input range. Input/output voltage at different load levels.
Table 2. 1.0 V
output
DC
Load current Output voltage
50 mA 0.998 V
7.5 A 1.019 V
10.5 A 1.027 V

Table 3. 1.8 VDC output

Load current Output voltage
50 mA 1.792 V
1.8 A 1.794 V
2.5 A 1.794 V

4.2 Ripple/noise voltage

The maximum peak to peak ripple voltage was measured at the load level indicated.

Table 4. 1.0 VDC output

Load current Ripple voltage p-p
DC
DC
DC
DC
DC
DC
10.5 A 25 mV

Table 5. 1.8 VDC output

Load current Ripple voltage p-p
2.5 A 20 mV

4.3 Load transient overshoot

The output load levels were varied in a stepwise fashion at the percentage and load levels indicated. The maximum change in output voltage was recorded in the following oscilloscope photographs.
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AN2683 Functional testing
Table 6. 1.0 V
Percent load change Current level change (A)
output
DC
100 to 50% 5.25 to 10.5
50 to 100% 5.25 to 10.5
20 to 80% 2.0 to 8.5
Figure 16. VDC output - 100% to 50% load change (20µs/div)
where:
Top trace - L1 current 2 A/division
Bottom trace - output voltage 50 mV/division
29/38
Functional testing AN2683
Figure 17. VDC output - 50% to 100% load change (20µs/div)
where:
Top trace - L1 current 2 A/division
Bottom trace - output voltage 50 mV/division
Figure 18. V
output - 20% to 80% step load change (50µs/div)
DC
30/38
AN2683 Functional testing
where:
Top trace - L1 current 2 A/division
Bottom trace - output voltage 50 mV/division
Table 7. 1.8 V
Percent load change Current level change (A)
Figure 19. V
DC
output
DC
100 to 50% 2.5 to 1.25
50 to 100% 1.25 to 2.5
20 to 80% 0.5 to 2
output - 100% to 50% load change (20µs/div)
where:
Top trace - L1 current 0.5 A/division
Bottom trace - output voltage 50 mV/division
31/38
Functional testing AN2683
Figure 20. VDC output - 50% to 100% load change (20µs/div)
where:
Top trace - L1 current 0.5 A/division
Bottom trace - output voltage 50 mV/division
Figure 21. V
output - 20% to 80% step load change (50µs/div)
DC
32/38
AN2683 Functional testing
where:
Top trace - L1 current 0.5 A/division
Bottom trace - output voltage 50 mV/division

4.4 Output current limit

Each output was loaded to its maximum rated load level. The load was increased in 10% increments of the maximum rated load until the overcurrent limiting functioned. The level was recorded.
Table 8. 1.0 V
output
DC

Table 9. 1.8 VDC output

After the overcurrent limit functioned, the load level was adjusted back the maximum rated level and the input power was shut off and reapplied. The outputs resumed to normal operation.

4.5 Output short circuit

Each output in turn was loaded to its maximum rated load level. A short was then applied to the output at which time the overcurrent protection functioned. The opposite output remained running. The short was then removed and the output remained latched off. The input power was removed and then reapplied. The output resumed normal function. With input power removed, each output in turn was shorted. Then input power was applied. The shorted output's current limiting function operated while the non-shorted output ran normally. The short was then removed and the input power was recycled. The output resumed normal function.
Percent of maximum load (A)
130% (13.65)
Percent of maximum load (A)
130% (3.25)

4.6 Input under voltage lockout

With each output loaded to its nominal load level the input voltage was slowly increased from 0 to 6 V increased from 6 to 8 V device turns on is adjusted by the voltage divider consisting of R17 and R18 connected to the SHDN pin(5). The typical turn-on threshold is 1.35 V down with 0.85 V
and the output voltages were recorded. The input voltage was then slowly
DC
DC
and the output voltages were recorded. The voltage at which the
DC
on the pin.
33/38
and the device typically shuts
DC
Functional testing AN2683

Table 10. 1.0 VDC output

Voltage at Vin 6 V
0.0 1.017

Table 11. 1.8 VDC output

Voltage at Vin 6 V
0.0 1.795
DC
DC
Voltage a t Vin 8 V
Voltage a t Vin 8 V
DC
DC
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AN2683 Bill of material

5 Bill of material

Table 12. Part list

Part reference Value / type PCB footprint Manufacturer P/N
C1 0.1 µF 50 V X5R SM_0805 Any
C2 0.1 µF 50 V X5R SM_0805 Any
C3 0.1 µF 50 V X5R SM_0805 Any
C4 0.22 µF 25 V X5R SM_0805 Any
C5 4.7 µF 25 V X5R SM_1210 Any
C6 10 µF 25 V X5R SM_1206 Any
C7 10 µF 25 V X5R SM_1206 Any
C8 10 µF 25 V X5R SM_1206 Any
C9 1.8 nF 50 V X5R SM_0805 Any
C10 1.8 nF 50 V X5R SM_0805 Any
C11 330 pF 50 V NPO SM_0603 Any
C12 22 pF 50 V NPO SM_0603 Any
C13 330 pF 50 V NPO SM_0603 Any
C14 22 pF 50 V NPO SM_0603 Any
C15 100 µF 6.3 V X5R SM_1210 TDK or equivalent C3225X5ROJ107K
C16 47 µF 6.3 V X5R SM_1206 TDK or equivalent C3216X5ROJ476K
C17 100 pF 50 V NPO SM_0603 Any
C18 0.1 µF 50 V X5R SM_0805 Any
C19 100 µF 6.3 V X5R SM_1210 TDK or equivalent C3225X5ROJ107K
C20 47 µF 6.3 V X5R SM_1206 TDK or equivalent C3216X5ROJ476K
C21 4.7 µF 25 V X5R SM_1210 Any
C22 1 µF 16 V X5R SM_0603 Any
D1
D2 Open DO-214AC
D3 Open DO-214AC
L1 0.7 µH 17 A Custom Coilcraft MLC1265-701MLB
L2 7.0 µH 4.35 A Custom Coilcraft MSS1038-702NLB
Q1
Q2
BAT54A dual
Schottky
STS12NH3LL
MOSFET
STS25NH3LL
MOSFET
SOT-23 STMicroelectronics BAT54A
SO-8 STMicroelectronics STS12NH3LL
SO-8 STMicroelectronics STS25NH3LL
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Bill of material AN2683
Table 12. Part list (continued)
Part reference Value / type PCB footprint Manufacturer P/N
Q3
R1 10R0 1% SM_0805 Any
R2 10R0 1% SM_0805 Any
R3 47R5 1% SM_0805 Any
R4 3R92 1% SM_1206 Any
R5 750R 1% SM_0805 Any
R6 750R 1% SM_0805 Any
R7 21.6k 1% SM_0805 Any
R8 5.11k 1% SM_0805 Any
R9 57.6k 1% SM_0805 Any
R10 3.74k 1% SM_0805 Any
R11 1.91k 1% SM_0805 Any
R12 2.55k 1% SM_0805 Any
R13 1.10k 1% SM_0603 Any
R14 10.0k 1% SM_0603 Any
R15 10.0k 1% SM_0603 Any
R16 10.0k 1% SM_0603 Any
STS8DNF3LL dual
MOSFET
SO-8 STMicroelectronics STS8DNF3LL
R17 110k 1% SM_0603 Any
R18 30.0k 1% SM_0603 Any
U1
PM6680 Dual Dc-Dc
Controller
VFQFPN-32 5x5 STMicroelectronics PM6680
36/38
AN2683 Revision history

6 Revision history

Table 13. Document revision history

Date Revision Changes
15-Apr-2008 1 Initial release.
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AN2683
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