Designing with the L5970D 1A high efficiency DC-DC converter
Introduction
The L5970D is a step-down monolithic power switching regulator capable of delivering up to
1 A at output voltages from 1.235 V to 35 V. The operating input voltage ranges from 4.4 V to
36 V. It has been designed using BCDV technology and the power switching element is
implemented through a P-channel DMOS transistor. It does not require a bootstrap
capacitor, and the duty cycle can range up to 100%. An internal oscillator fixes the switching
frequency at 250 kHz. This minimizes the LC output filter.
A synchronization pin is available for cases where a higher frequency (up to 500 kHz) is
required. Pulse-by-pulse and frequency foldback overcurrent protection offer effective short
circuit protection. Other features are voltage feed-forward, protection against feedback
disconnection, inhibit and thermal shutdown.
Figure 20.Junction temperature vs. output current (V
Figure 21.Junction temperature vs. output current (V
Figure 22.Junction temperature vs. output current (V
Figure 23.Efficiency vs. output current (V
Figure 24.Junction temperature vs. output current (V
Master/slave synchronization. When open, a signal synchronous with the turn-OFF of
the internal power is present. When connected to an external signal at a frequency
2SYNC
3INH
4 COMP E/A output to be used for frequency compensation
5FB
higher than the internal one, then the device is synchronized by the external signal.
Connecting the SYNC pins of two devices, the one with the higher frequency works as
master and the other one works as slave.
A logical signal (active high) disables the device. With an IHN higher than 2.2 V the
device is OFF and with an INH lower than 0.8 V, the device is ON.
If INH is not used the pin must be grounded. When it is open, an internal pull-up
disables the device.
Step-down feedback input. Connecting the output voltage directly to this pin results in
an output voltage of 1.235 V. An external resistor divider is required for higher output
voltages (the typical value for the resistor connected between this pin and ground is
4.7 k).
6V
Reference voltage of 3.3 V. No filter capacitor is needed for stability
REF
7GND Ground
8V
Unregulated DC input voltage.
CC
1.2 Block diagram
Figure 4.Block diagram
TRIMMING
INH
COMP
FB
1.235V
SYNC
INHIBIT
E/A
-
+
OSCILLATOR
VOLTAGES
MONITOR
PWM
+
-
THERMAL
SHUTDOWN
VCC
SUPPLY
1.235V 3.5V
PEAK TO PEAK
CURRENT LIMIT
DCkQ
DRIVER
FREQUENCY
SHIFTER
GNDOUT
V
REF
BUFFER
LPDMOS
POWER
AM00003v1
V
REF
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Functional descriptionAN1330
2 Functional description
The main internal blocks are shown in the device block diagram in Figure 4. They are:
●A voltage regulator supplying the internal circuitry. From this regulator, a 3.3 V
reference voltage is externally available.
●A voltage monitor circuit which checks the input and internal voltages.
●A fully integrated sawtooth oscillator with a frequency of 250 kHz ±15%, including also
the voltage feed forward function and an input/output synchronization pin.
●Two embedded current limitation circuits which control the current that flows through
the power switch. The pulse-by-pulse current limit forces the power switch OFF cycle
by cycle if the current reaches an internal threshold, while the frequency shifter reduces
the switching frequency in order to significantly reduce the duty cycle.
●A transconductance error amplifier.
●A pulse width modulation (PWM) comparator and the relative logic circuitry necessary
to drive the internal power.
●A high side driver for the internal P-MOS switch.
●An inhibit block for standby operation.
●A circuit to implement the thermal protection function.
2.1 Power supply and voltage reference
The internal regulator circuit (shown in Figure 5) consists of a start-up circuit, an internal
voltage Preregulator, the Bandgap voltage reference and the Bias block that provides
current to all the blocks. The Starter gives the start-up currents to the entire device when the
input voltage goes high and the device is enabled (inhibit pin connected to ground). The
Preregulator block supplies the Bandgap cell with a preregulated voltage V
very low supply voltage noise sensitivity.
2.2 Voltages monitor
An internal block continuously senses the VCC, V
their thresholds, the regulator begins operating. There is also a hysteresis on the V
(UVLO).
and VBG. If the voltages go higher than
REF
that has a
REG
CC
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AN1330Functional description
Figure 5.Internal regulator circuit
V
CC
STARTER
2.3 Oscillator and synchronizer
Figure 6 shows the block diagram of the oscillator circuit.
The Clock Generator provides the switching frequency of the device, which is internally fixed
at 250 kHz. The Frequency Shifter block acts to reduce the switching frequency in case of
strong overcurrent or short circuit. The clock signal is then used in the internal logic circuitry
and is the input of the Ramp Generator and synchronizer blocks.
The Ramp Generator circuit provides the sawtooth signal, used for PWM control and the
internal voltage feed-forward, while the synchronization circuit generates the
synchronization signal. The device also has a synchronization pin which can works both as
Master and Slave.
PREREGULATOR
VREG
BANDGAP
IC BIAS
VREF
AM00006v1
As Master, it serves to synchronize external devices to the internal switching frequency, and
as Slave to synchronize itself using an external signal up to 500 kHz.
In particular, when connecting together two devices the one with the lower switching
frequency works as Slave and the other as Master.
To synchronize the device, the SYNC pin must pass from a low level to a level higher than
the synchronization threshold with a duty cycle that can vary from approximately 10% to
90%, depending also on the signal frequency and amplitude.
The frequency of the synchronization signal must be, at a minimum, higher than the internal
switching frequency of the device (250 kHz).
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Functional descriptionAN1330
Figure 6.Oscillator circuit block diagram
FREQUENCY
FREQUENCY
SHIFTER
Ibias_osc
GENERATOR
GENERATOR
SHIFTER
CLOCK
CLOCK
RAMP
RAMP
GENERATOR
GENERATOR
SYNCHRONIZATOR
SYNCHRONIZER
CLOCK
RAMP
SYNC
t
AM00007v1
2.4 Current protection
The L5970D has two types of current limit protection: pulse-by-pulse and frequency
foldback.
The schematic of the current limitation circuitry for the pulse-by-pulse protection is shown in
Figure 7. The output power PDMOS transistor is split into two parallel PDMOS transistors.
The smallest one includes a resistor in series, R
R
and if reaches the threshold, the mirror becomes unbalanced and the PDMOS is
SENSE
switched off until the next falling edge of the internal clock pulse. Due to this reduction of the
ON time, the output voltage decreases. Since the minimum switch ON time (necessary to
avoid a false overcurrent signal) is too short to obtain a sufficiently low duty cycle at 250
kHz, the output current, in strong overcurrent or short circuit conditions, could increase
again. For this reason the switching frequency is also reduced, thus keeping the inductor
current under its maximum threshold. The Frequency Shifter (Figure 6) functions based on
the feedback voltage. As the feedback voltage decreases (due to the reduced duty cycle),
the switching frequency decreases also.
. The current is sensed through
SENSE
Figure 7.Current limitation circuitry
VCC
RSENSE
A1
PWM
DRIVER
OUT
A1/A2=95
I
OFF
2.5 Error amplifier
The voltage error amplifier is the core of the loop regulation. It is a transconductance
operational amplifier whose non inverting input is connected to the internal voltage
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RTH
I
A2
II
L
NOT
AM00008v1
AN1330Functional description
reference (1.235 V), while the inverting input (FB) is connected to the external divider or
directly to the output voltage. The output (COMP) is connected to the external compensation
network. The uncompensated error amplifier has the following characteristics:
The error amplifier output is compared with the oscillator sawtooth to perform PWM control.
2.6 PWM comparator and power stage
This block compares the oscillator sawtooth and the error amplifier output signals
generating the PWM signal for the driving stage.
The power stage is a highly critical block, as it functions to guarantee a correct turn ON and
turn OFF of the PDMOS. The turn ON of the power element, or more accurately, the rise
time of the current at turn ON, is a very critical parameter. At a first approach, it appears that
the faster the rise time, the lower the turn ON losses. However, there is a limit introduced by
the recovery time of the recirculation diode.
In fact, when the current of the power element is equal to the inductor current, the diode
turns OFF and the drain of the power is able to go high. But during its recovery time, the
diode can be considered a high value capacitor and this produces a very high peak current,
responsible of many problems:
●Spikes on the device supply voltage that cause oscillations (and thus noise) due to the
board parasitics
●Turn ON overcurrent leads to a decrease in the efficiency and system reliability
●Major EMI problems
●Shorter freewheeling diode life
The fall time of the current during the turn OFF is also critical, as it produces voltage spikes
(due to the parasitic elements of the board) that increase the voltage drop across the
PDMOS.
In order to minimize these problems, a new driving circuit topology has been used and the
block diagram is shown in Figure 8. The basic idea is to change the current levels used to
turn the power switch ON and OFF, based on the PDMOS and the gate clamp status.
This circuitry allows the power switch to be turned OFF and ON quickly and addresses the
freewheeling diode recovery time problem. The gate clamp is necessary to avoid that V
the internal switch goes higher than V
max. The ON/OFF Control block protects against
GS
GS
of
any cross conduction between the supply line and ground.
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Functional descriptionAN1330
Figure 8.Driving circuitry
VCC
Vgs
STOP
DRIVE
DRAIN
max
CLAMP
ON/OFF
CONTROL
GATE
OFF
ON
I
OFF
DRAIN
I
ON
PDMOS
ESR
C
VOUT
AM00009v1
I
LOAD
L
2.7 Inhibit function
The inhibit feature is used to put the device in standby mode. With the INH pin higher than
2.2 V the device is disabled and the power consumption is reduced to less than 100 µA.
With the INH pin lower than 0.8 V, the device is enabled. If the INH pin is left floating, an
internal pull up ensures that the voltage at the pin reaches the inhibit threshold and the
device is disabled. The pin is also V
compatible.
CC
2.8 Thermal shutdown
The shutdown block generates a signal that turns OFF the power stage if the temperature of
the chip goes higher than a fixed internal threshold (150 °C). The sensing element of the
chip is very close to the PDMOS area, ensuring fast and accurate temperature detection. A
hysteresis of approximately 20 °C avoids that the devices turns ON and OFF continuously.
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