LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for
FM transmitters. LDMOS has proven advantages against bipolar devices in terms of higher
gain, efficiency, linearity, and biasing simpleness that lower the overall system cost and
make them attractive for high volume businesses demanding low cost RF power transistor
solutions. Thanks to these advantages, LDMOS RF power transistors are the proven
mainstay in the power amplifier business of the cellular base station today. The device used
for the present characterization, SD57045, an STMicroelectronics product, is a lateral
current, double diffused MOS transistor that delivers 45 W under 28 V supply. It is
unmatched from DC to 1 Ghz making it eligible for a variety of applications, especially for
high performance, low cost FM driver applications. This application note documents the
feasibility of a low cost 900 MHz cellular device as a commercial FM driver. The key
advantages of LDMOS technology are improved thermal resistance and reduced source
output inductance. The wire-bonded connections to the external circuitry (DMOS config.)
are no longer required because the source at the chip surface is connected to the substrate
by the diffusion of a highly doped p-type region. Consequently, LDMOS has excellent high
frequency response because of its high f
capacitance and reduced source inductance. An additional advantage of the LDMOS
structure is that beryllium oxide (BeO), a toxic electrical insulator required to isolate the
drain with DMOS transistors, is no longer needed. Hence, not only the thermal resistance is
improved, but package cost and environmental impact are significantly reduced. Finally, in
an LDMOS, the parasitic bipolar has been nullified guaranteeing good ruggedness,
efficiency and high current handling capability.
Input and output impedances for the SD57045 are shown in Table 1 below:
Table 1.Input and output impedances
Frequency (MHz) Z input Z output
88 10.8-j7.60 7.5-j0.15
95 10.6-j8.36 7.8-j0.34
108 10.5-j9.87 8.1-j0.61
With respect to these impedances, two 4:1 transmission line auto transformers were
designed using a 25 Ω, 1/8 wavelength, semi rigid coaxial cable. To achieve this
transformation across the band, a capacitor was added to the low impedance port of each
transformer to cancel the leakage inductance. The frequency response is shown in Figure 1.
Simple L-sections were utilized to make the final transformation from the low impedance
port of the transformers (12.5 Ω) to the measured impedances of the device (see Tab l e 1).
This design uses printed series inductors on a 30 mil glass teflon board. The gain of any
power FET is extremely high from DC throughout the low HF frequency band. A feedback
network is necessary to suppress the low frequency gain, as well as give a nominal amount
of gain at the frequency of interest. This feedback also helps to increase the input
impedance. Since LDMOS has such a high gain at low frequencies, a low value, high power,
flange mount resistor must be comprised in the design. The capacitor in the feedback path
(C3) provides negative feedback at low frequencies. This component was designed to be
self-resonant. Far below the FM band, at 100 MHz, the capacitor looks slightly inductive,
reducing the amount of feedback in the band of interest.
Figure 1.Broadband 4:1 transformer
S11
0dB
-30dB
-60dB
80MHz90MHz
Unbalanced transformers offer an efficient matching method from 50 W to low impedance.
Besides, auto transformers have a zero impedance point over a broad bandwidth, offering
an ideal DC feeding point to the gate and drain circuits. In order to prevent high frequency
oscillations, a bypass capacitor is used at the zero impedance point of the transformer. The
capacitor value must be selected so that its own resonant frequency is above the frequency
4/10
100MHz
110MHz
AN1224Circuit design
of interest. Depending on the application, additional low frequency bypass capacitors
isolated with lossy elements (ferrite beads) may be required to prevent power supply noise
affecting gate and drain circuits. Circuit schematic is given in Figure 2, and layout in Figure 3
with component values in Table 2 .
Table 2.Bill of material
ReferenceDescription
L1, L3, L4, L7 50 Ω transmission line
C1,C13 1000 pF chip capacitor
C2 39000 pF chip capacitor
C3 36 pF chip capacitor
R1 1 kΩ resistor
C4, C6, C10 10000 pF chip capacitor
R2 1.2 kΩ resistor
C5, C12 10 µF, 50V electrolytic capacitor
R3 240 Ω / 40 W resistor
C9, C11 1200 pF chip capacitor
C8 33 pF chip capacitor
C7 25-115 pF variable cap-arco trimmer
L2, L6 4:1 transformers, 10.7", 25 Ω.
Board 30mils, 2 ounces of copper, ε
Figure 2.Broadband power amplifier
r= 2.55
5/10
Characterization resultsAN1224
Figure 3.Layout for broadband power amplifier
2 Characterization results
●T
Table 3.Absolute maximum ratings
Table 4.Thermal data
= 25 °C
case
Symbol Parameter Value Unit
V
(BR)DSS
V
DGR
V
I
P
DISS
T
JMax
T
STG
GS
D
Drain-source voltage 65 V
Drain-gate voltage (RGS = 1 MΩ) 65 V
Gate-source voltage +/-20 V
Drain current 5 A
Power dissipation (at TC=70°C) 93 W
Operating junction temperature 200 °C
Storage temperature -65 to 200 °C
Symbol Parameter Value Unit
R
th(j-c)
Junction-case thermal resistance1.4°C/W
6/10
AN1224Characterization results
Figure 4.Drain current vs. gate-source voltage
4
3.5
3
2.5
2
1.5
1
ID, DRAIN CURRENT (A)
0.5
0
2.533.544.55
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 5.Gate-source voltage vs. case temperature
1.04
1.02
1
0.98
0.96
-250255075
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
Tcase, CASE TEMPERATURE (˚C)
Id=250mA
Id=3 A
Id=2 A
Id=1.5A
Id=1 A
7/10
Characterization resultsAN1224
Figure 6.Output power and efficiency vs. input power
60
48
36
Output Power (W)
24
12
0.10.20.30.40.50.6
Input Power (W)
Pout
Freq=95 MHz
Idq=250 mA
Vdd=28V
Figure 7.Power gain and efficiency vs. output power
24
Gain
22
Gain (dB)
20
Freq=95 MHz
Idq=250 mA
Vdd=28V
18
15304560
Pout (W)
70
Eff
60
50
Efficiency (%)
40
70
Eff
60
Efficiency(%)
50
40
Figure 8.Class A safe operating area
10
Tj=200˚C
ID, DRAIN CURRENT (A)
1
110100
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
8/10
Tc= 70 ˚C
Tc=100˚C
AN1224Conclusion
3 Conclusion
In this application note we have demonstrated the feasibility of a low cost, 900 MHz cellular
device as a commercial FM driver. One can conclude that ST LDMOS technology offers
viable solutions for power amplifiers at frequencies covering the high HF throughout the high
UHF bands. More information about these devices can be found at http://www.st.com/rf.
4 Revision history
Table 5.Document revision history
DateRevisionChanges
13-Sep-20072No content change
26-Oct-20073
– Document reformatted no content change
– Modified: title
9/10
AN1224
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