ALTAIR05T-800 is a high-voltage all-primary
sensing switcher intended for operating directly
from the rectified mains with minimum external
parts. It combines a high-performance lowvoltage PWM controller chip and an 800 V
avalanche-rugged power section in the same
package.
The device combines two silicon in the same package: a low voltage PWM controller and
an 800 V avalanche rugged power section.
The controller chip is a current-mode specifically designed for offline quasi-resonant flyback
converters.
The device features a unique characteristic: it is capable of providing constant output
voltage (CV) and constant output current (CC) regulation using primary-sensing feedback.
This eliminates the need for the optocoupler, the secondary voltage reference, as well as the
current sensor, still maintaining quite accurate regulation also in presence of heavy load
transients. Additionally, it is possible to compensate the voltage drop on the output cable, so
as to improve CV regulation on the external accessible terminals.
Quasi-resonant operation is guaranted by means of a transformer demagnetization sensing
input that turns on the power section. The same input serves also the output voltage
monitor, to perform CV regulation, and the input voltage monitor, to achieve mainsindependent CC regulation (line voltage feedforward).
The maximum switching frequency is top-limited below 166 kHz, so that at medium-light
load a special function automatically lowers the operating frequency still maintaining the
valley switching operation. At very light load, the device enters a controlled burst-mode
operation that, along with the built-in high-voltage start-up circuit and the low operating
current, helps minimize the standby power.
Although an auxiliary winding is required in the transformer to correctly perform CV/CC
regulation, the chip is able to power itself directly from the rectified mains. This is useful
especially during CC regulation, where the flyback voltage generated by the winding drops
below UVLO threshold. However, if ultra-low no-load input consumption is required to
comply with the most stringent energy-saving recommendations, then the device needs to
be powered via the auxiliary winding.
In addition to these functions that optimize power handling under different operating
conditions, the device offers protection features that considerably increase end-product’s
safety and reliability: auxiliary winding disconnection - or brownout – detection and shorted
secondary rectifier - or transformer’s saturation – detection. All of them are auto restart
mode.
Doc ID 17957 Rev 13/28
Pin connectionALTAIR05T-800
2 Pin connection
Figure 2.Pin connection (top view)
SOURCE
SOURCE
SOURCE
SOURCE
Vcc
Vcc
GND
GND
IREF
IREF
ZCD/FB
ZCD/FB
COM P
COM P
CDC
CDC
1
1
1
2
2
2
3
3
3
4
4
4
5
5
5
6
6
6
7
7
7
8
8
8
16
16
16
15
15
15
14
14
14
13
13
13
12
12
12
11
11
11
10
10
10
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
DRAIN
N.C.
N.C.
N.A.
N.A.
N.A.
N.A.
9
9
9
N.A.
N.A.
Note:The copper area for heat dissipation has to be designed under the drain pins
Table 1.Pin functions
N.NameFunction
Power section source and input to the PWM comparator. The current flowing in the MOSFET
is sensed through a resistor connected between the pin and GND. The resulting voltage is
1, 2SOURCE
3Vcc
compared with an internal reference (0.75V max.) to determine MOSFET’s turn-off. The pin
is equipped with 250 ns blanking time after the gate-drive output goes high for improved
noise immunity. If a second comparison level located at 1V is exceeded the IC is stopped and
restarted after Vcc has dropped below 5V.
Supply Voltage of the device. An electrolytic capacitor, connected between this pin and
ground, is initially charged by the internal high-voltage start-up generator; when the device is
running the same generator keeps it charged in case the voltage supplied by the auxiliary
winding is not sufficient. This feature is disabled in case a protection is tripped. Sometimes a
small bypass capacitor (0.1 µF typ.) to GND might be useful to get a clean bias voltage for
the signal part of the IC.
Ground. Current return for both the signal part of the IC and the gate drive. All of the ground
4GND
connections of the bias components should be tied to a trace going to this pin and kept
separate from any pulsed current return.
CC regulation loop reference voltage. An external capacitor has to be connected between
5IREF
this pin and GND. An internal circuit develops a voltage on this capacitor that is used as the
reference for the MOSFET’s peak drain current during CC regulation. The voltage is
automatically adjusted to keep the average output current constant.
4/28Doc ID 17957 Rev 1
ALTAIR05T-800Pin connection
Table 1.Pin functions (continued)
N.NameFunction
Transformer’s demagnetization sensing for quasi-resonant operation. Input/output voltage
monitor. A negative-going edge triggers MOSFET’s turn-on. The current sourced by the pin
during ON-time is monitored to get an image of the input voltage to the converter, in order to
compensate the internal delay of the current sensing circuit and achieve a CC regulation
independent of the mains voltage. If this current does not exceed 50µA, either a floating pin
6ZCD/FB
7COMP
8CDC
or an abnormally low input voltage is assumed, the device is stopped and restarted after Vcc
has dropped below 5V. Still, the pin voltage is sampled-and-held right at the end of
transformer’s demagnetization to get an accurate image of the output voltage to be fed to the
inverting input of the internal, transconductance-type, error amplifier, whose non-inverting
input is referenced to 2.5V. Please note that the maximum I
to not exceed ±2 mA (AMR) in all the Vin range conditions (85-265 Vac). No capacitor is
allowed between the pin and the auxiliary transformer.
Output of the internal transconductance error amplifier. The compensation network is placed
between this pin and GND to achieve stability and good dynamic performance of the voltage
control loop.
Cable drop compensation input. During CV regulation this pin, capable of sinking current,
provides a voltage lower than the internal reference voltage (2.5V) by an amount proportional
to the dc load current. By connecting a resistor between this pin and ZCD/FB, the CV
regulation setpoint is increased proportionally. This allows that the voltage drop across the
output cable be compensated and, ideally, that zero load regulation at the externally available
terminals be achieved. Leave the pin open if the function is not used.
sunk/sourced current has
ZCD/FB
9-11N.ANot available. These pins must be left not connected
12N.CNot internally connected. Provision for clearance on the PCB to meet safety requirements.
Drain connection of the internal power section. The internal high-voltage start-up generator
13 to 16DRAIN
sinks current from this pin as well. Pins connected to the internal metal frame to facilitate
heat dissipation.
Doc ID 17957 Rev 15/28
Maximum ratingsALTAIR05T-800
3 Maximum ratings
3.1 Absolute maximum ratings
Table 2.Absolute maximum ratings
SymbolPinParameterValueUnit
V
Eav1,2, 13-16 Single pulse avalanche energy (Tj = 25°C, I
Vcc3Supply voltage (Icc < 25mA)Self limitingV
I
ZCD/FB
I
1,2, 13-16 Drain-to-source (ground) voltage-1 to 800V
DS
1,2, 13-16 Drain current1A
I
D
6Zero current detector current±2mA
---7, 8Analog inputs and outputs-0.3 to 3.6V
CDC
8Maximum sunk current200µA
PtotPower dissipation @T
TjJunction temperature range-25 to 150°C
TstgStorage temperature-55 to 150°C
3.2 Thermal data
Table 3.Thermal data
SymbolParameterMax. value Unit
R
th j-pin
R
th j-amb
Thermal resistance, junction-to-pin10
Thermal resistance, junction-to-ambient110
= 1A)50mJ
D
= 50°C0.9W
A
°C/W
6/28Doc ID 17957 Rev 1
ALTAIR05T-800Electrical characteristics
4 Electrical characteristics
(TJ = -25 to 125 °C, Vcc = 14 V; unless otherwise specified)
Table 4.Electrical characteristics
SymbolParameterTest conditionMin. Typ. Max. Unit
Power section
V
(BR)DSS
I
DSS
Drain-source breakdownID< 100 µA; Tj = 25 °C800V
V
= 750 V; Tj = 125 °C
Off state drain current
DS
(See Figure 4 and note)
80µA
Id=100 mA; Tj = 25 °C1114
R
DS(on)
C
Drain-source ON-state resistance
Effective (energy-related) output capacitance (See Figure 3)
oss
Id=100 mA; Tj = 125 °C2228
High-voltage start-up generator
V
Start
I
charge
V
CCrestart
Min. Drain start voltageI
Vcc startup charge current
Vcc restart voltage (Vcc falling)
< 100 µA405060V
charge
V
> V
DRAIN
Tj = 25 °C
(1)
Start
; VCC<V
CCOn
45.57mA
9.510.5 11.5
After protection tripping5
Supply voltage
VccOperating rangeAfter turn-on11.523V
Vcc
Vcc
Turn-on threshold
On
Turn-off threshold
Off
V
Zener voltageIcc = 20 mA232527V
Z
(1)
(1)
121314V
91011V
Supply current
Ω
V
Icc
start-up
Start-up current(See Figure 5) 200300µA
IqQuiescent current(See Figure 6)11.4mA
IccOperating supply current @ 50 kHz(See Figure 7)1.41.7mA
Iq
(fault)
Fault quiescent current
During hiccup and brownout
(See Figure 8)
250350µA
Start-up timer
T
START
T
RESTART
Start timer period100125175µs
Restart timer period during burst mode400500700µs
Zero current detector
I
ZCDb
V
ZCDH
Input bias currentV
Upper clamp voltageI
= 0.1 to 3 V0.11µA
ZCD
= 1 mA3.03.33.6V
ZCD
Doc ID 17957 Rev 17/28
Electrical characteristicsALTAIR05T-800
Table 4.Electrical characteristics (continued)
SymbolParameterTest conditionMin. Typ. Max. Unit
V
ZCDL
V
ZCDA
V
ZCDT
I
ZCDON
T
BLANK
Lower clamp voltageI
= - 1 mA-90-60-30mV
ZCD
Arming voltagepositive-going edge100110120mV
Triggering voltagenegative-going edge506070mV
Min. source current during MOSFET ON-time-25-50-75µA
V
≥ 1.3V 6
Trigger blanking time after MOSFET’s turn-off
COMP
= 0.9V 30
V
COMP
Line feedforward
R
Equivalent feedforward resistor
FF
I
= 1mA45Ω
ZCD
Transconductance error amplifier
V
REF
Voltage reference
gmTransconductance
Tj = 25°C
Tj = -25 to 125°C and
Vcc=12V to 23V
∆I
COMP
V
COMP
(1)
(1)
= ±10 µA
= 1.65 V
2.462.52.54
2.422.58
1.32.23.2mS
GvVoltage gainOpen loop73dB
GBGain-bandwidth product500KHz
I
COMP
V
COMPH
V
COMPL
V
COMPBM
Source currentV
Sink currentV
Upper COMP voltageV
Lower COMP voltageV
Burst-mode threshold1V
= 2.3V, V
ZCD
= 2.7V, V
ZCD
= 2.3 V2.7V
ZCD
= 2.7 V0.7V
ZCD
= 1.65V70100µA
COMP
= 1.65V400750µA
COMP
HysBurst-mode hysteresis65mV
µs
V
CDC function
V
CDC
CDC voltage referenceV
COMP
= 1.1V, I
Current reference
V
IREFx
V
CREF
Maximum value
Current reference voltage0.192 0.2 0.208V
V
COMP
Current sense
t
LEB
t
d(H-L)
V
V
CSdis
1. Parameters tracking each other
Leading-edge blanking200250300ns
Delay-to-output300ns
Max. clamp value
CSx
Hiccup-mode OCP level
dVcs/dt = 200 mV/µs
(1)
8/28Doc ID 17957 Rev 1
= V
CDC
COMPL
= 1µA
(1)
(1)
(1)
2.4 2.5 2.6V
1.51.61.7V
0.70.750.8 V
0.9211.08V
ALTAIR05T-800Electrical characteristics
Figure 3.C
output capacitance variation
OSS
C
(pF)
OSS
500
400
300
200
100
0
0255075100125150
V
(V)
DS
Figure 4.Off state drain and source current test circuit
14 V
CDC
2. 5V
FB/ZCD
+
-
COMPSOURCE
IR E F
CURRENT
CONTROL
DRAINVDD
GND
Ids s
A
Vin
75 0V
Note:The measured I
effective MOSFET’s off state drain current.
Figure 5.Start-up current test circuit
is the sum between the current across the start-up resistor and the
DSS
CDC
2. 5V
FB/ZCD
Iccst art-up
+
-
COMPSOURCE
A
IR EF
Doc ID 17957 Rev 19/28
1 1.8 V
CURRENT
CONTROL
GND
DRAINVDD
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