The AIS326DQ is a three axes digital output
accelerometer that includes a sensing element
and an IC interface able to take the information
from the sensing element and to provide the
measured acceleration signals to the external
world through an SPI serial interface. I
compatible interface is also available.
®
compliant
²
C
AIS326DQ
MEMS inertial sensor
QFPN-28
process developed by ST to produce inertial
sensors and actuators in silicon.
The IC interface instead is manufactured using a
CMOS process that allows high level of
integration to design a dedicated circuit which is
factory trimmed to better match the sensing
element characteristics.
The AIS326DQ has a user selectable full scale of
±2 g, ±6 g and it is capable of measuring
acceleration over a bandwidth of 640 Hz for all
axes. The device bandwidth may be selected
accordingly to the application requirements. The
self-test capability allows the user to check the
functioning of the system.
The device is available in plastic quad flat
package no lead surface mount (QFPN) and it is
specified over a temperature range extending
from -40 °C to +105 °C.
The sensing element, capable of detecting the
acceleration, is manufactured using a dedicated
18ReservedEither leave unconnected or connect to Vdd_IO
19VddPower supply
20ReservedConnect to Vdd
21 - 28NCInternally not connected
SDI/
SDO
SPI serial data input (SDI)
3-wire interface serial data output (SDO)
Optional external clock, if not used either leave unconnected or
connect to GND
Doc ID 14956 Rev 49/51
Mechanical and electrical specificationsAIS326DQ
2 Mechanical and electrical specifications
2.1 Mechanical characteristics
Table 3.Mechanical characteristics @ Vdd = 3.3 V, T = -40 °C to 105 °C unless otherwise
SymbolParameterTest conditionsMin.Typ.
FSMeasurement range
noted
(1)
(3)
FS bit set to 0±1.7±2.0
(2)
Max.Unit
FS bit set to 1±5.3±6.0
Full-scale = ±2 g
T = 25 °C, ODR1=40 Hz
Full-scale = ±2 g
T = 25 °C, ODR2=160 Hz
1.0
2.0
DresDevice resolution
Full-scale = ±2 g
T = 25 °C, ODR3 = 640 Hz
Full-scale = ±2 g
T = 25 °C, ODR4 = 2560 Hz
Full-scale = ±2 g
12 bit representation
95210241096
3.9
15.6
SoSensitivity
TCSo
Off
TCOff
Sensitivity change vs
temperature
Zero-g level offset
accuracy
(5),(6)
Zero-g level change vs
temperature
Full-scale = ±6 g
12 bit representation
(4)
Full-scale = ±2 g
12 bit representation
Full-scale = ±2 g
X, Y axis
Full-scale = ±2 g
Z axis
Full-scale = ±6 g
X, Y axis
(4)
Full-scale = ±6 g
(4)
Z axis
Max delta from 25 °C0.2mg/
316340364
0.025%/
-100 100
-200200
-100100
-200200
g
mg
LSb/g
°C
mg
°C
Best fit straight line
X, Y axis
Full-scale = ±2 g
ODR = 40 Hz
Best fit straight line
NLNon linearity
(4)
Z axis
Full-scale = ±2 g
ODR = 40 Hz
CrAxCross axis
(4)
10/51Doc ID 14956 Rev 4
±2
% FS
±3
-55%
AIS326DQMechanical and electrical specifications
Table 3.Mechanical characteristics @ Vdd = 3.3 V, T = -40 °C to 105 °C unless otherwise
SymbolParameterTest conditionsMin.Typ.
V
BWSystem bandwidth
T
OP
Self-test output change
st
Operating temperature range-40+105°C
noted
(1)
(continued)
(9)
(7),(8)
Full-scale= ±2 g
X axis
Y axis
Full-scale= ±2 g
Z axis
Full-scale= ±6 g
X axis
Y axis
Full-scale= ±6 g
Z axis
(2)
Max.Unit
200460750
200460750
140360580
60160260
60160260
45120200
ODRx/4Hz
WhProduct weight0.2gram
1. The product is factory calibrated at 3.3 V. Operation over 3.6 V is not recommended
2. Typical specifications are not guaranteed
3. Verified by wafer level test and specification of initial offset and sensitivity
4. Guaranteed by design
5. Zero-g level offset value after MSL3 preconditioning
6. Offset can be eliminated by enabling the built-in high pass filter (HPF)
7. Self test output changes with the power supply. “Self-test output change” is defined as OUTPUT[LSb]
CTRL_REG1=1)
8. Output data reach 99% of final value after 5/ODR when enabling Self-test mode due to device filtering
9. ODRx is output data rate. Refer to Table 4 for specifications
- OUTPUT[LSb]
(Self-test bit on CTRL_REG1=0)
. 1LSb = 1g/1024 at 12 bit representation, 2 g Full-scale
(Self-test bit on
LSbFull-scale= ±2 g
LSbFull-scale= ±6 g
Doc ID 14956 Rev 411/51
Mechanical and electrical specificationsAIS326DQ
2.2 Electrical characteristics
Table 4.Electrical characteristics @ Vdd=3.3 V, T = -40 °C to 105 °C unless otherwise noted
SymbolParameterTest conditionsMin.Typ.
VddSupply voltage3.03.33.6V
Vdd_IOI/O pads supply voltage
(3)
1.71VddV
IddSupply currentVdd = 3.3 V0.670.80mA
IddPdn
VIHDigital high level Input voltage
VILDigital low level Input voltage
VOHHigh level output voltage
VOLLow level output voltage
Current consumption
in power-down mode
(3)
(3)
(3)
(3)
0.8*Vdd_IO
0.9*Vdd_IO
ODR1Output data rate 1 Dec factor = 51240
ODR2Output data rate 2Dec factor = 128160
ODR3Output data rate 3Dec factor = 32640
ODR4Output data rate 4Dec factor = 82560
BWSystem bandwidth
TonTurn-on time
T
OP
1. The product is factory calibrated at 3.3 V. Operation over 3.6 V is not recommended
2. Typical specifications are not guaranteed
3. Guaranteed by design
4. Digital filter -3 dB frequency
5. Time to obtain valid data after exiting power-down mode
Operating temperature range-40+105°C
(4)
(5)
(2)
Max.Unit
220µA
V
0.2*Vdd_IO
V
0.1*Vdd_IO
Hz
ODRx/4Hz
5/ODRxs
(1)
12/51Doc ID 14956 Rev 4
AIS326DQMechanical and electrical specifications
t
t
t
t
t
t
t
t
2.3 Communication interface characteristics
2.3.1 SPI - serial peripheral interface
Subject to general operating conditions for Vdd and TOP.
Table 5.SPI slave timing values
(1)
Val ue
SymbolParameter
MinMax
tc(SPC)SPI clock cycle125ns
fc(SPC)SPI clock frequency8MHz
tsu(CS)CS setup time5
th(CS)CS hold time10
tsu(SI)SDI input setup time5
Unit
th(SI)SDI input hold time15
ns
tv(SO)SDO valid output time55
th(SO)SDO output hold time7
tdis(SO)SDO output disable time50
1. Values are guaranteed at 8 MHz clock frequency for SPI with both 4 and 3 wires, based on characterization
results, not tested in production
(2)
h(SI)
v(SO)
(3)
c(SPC)
h(SO)
h(CS)
LSB IN
LSB OUT
(3)
(3)
dis(SO)
(3)
Figure 3.SPI slave timing diagram
CS
(3)
su(CS)
SPC
(3)
su(SI)
SDI
SDO
(3)
(3)
MSB IN
MSB OUT
2. Measurement points are done at 0.2·Vdd_IO and 0.8·Vdd_IO, for both input and output port
3. When no communication is on-going, data on CS, SPC, SDI and SDO are driven by internal pull-up
resistors
Doc ID 14956 Rev 413/51
Mechanical and electrical specificationsAIS326DQ
2.4 Absolute maximum ratings
Stresses above those listed as “absolute maximum ratings” may cause permanent damage
to the device. This is a stress rating only and functional operation of the device under these
conditions is not implied. Exposure to maximum rating conditions for extended periods may
affect device reliability.
Table 6.Absolute maximum ratings
SymbolRatingsMaximum valueUnit
VddSupply voltage
Vdd_IOI/O pins supply voltage
Input voltage on any control pin
(CS, SPC, SDI/SDO, SDO, CK)
Acceleration (any axis, powered, Vdd = 3.3 V)
Acceleration (any axis, unpowered)
Operating temperature range-40 to +105°C
Storage temperature range-40 to +125°C
A
A
T
Vin
POW
UNP
T
OP
STG
ESDElectrostatic discharge protection
(1)
(1)
(1)
-0.3 to 6.0V
-0.3 to Vdd +0.1V
-0.3 to Vdd_IO +0.3V
3000 g for 0.5 ms
10000 g for 0.1 ms
3000 g for 0.5 ms
10000 g for 0.1 ms
4.0 (HBM)kV
200 (MM)V
1.5 (CDM)kV
1. Supply voltage on any pin should never exceed 6.0 V.
This is a mechanical shock sensitive device, improper handling can cause permanent
damages to the part.
This is an ESD sensitive device, improper handling can cause permanent damages to
the part.
14/51Doc ID 14956 Rev 4
AIS326DQMechanical and electrical specifications
2.5 Terminology
2.5.1 Sensitivity
Sensitivity describes the gain of the sensor and can be determined e.g. by applying 1 g
acceleration to it. As the sensor can measure DC accelerations this can be done easily by
pointing the axis of interest towards the center of the earth, noting the output value, rotating
the sensor by 180 degrees (point to the sky) and noting the output value again. By doing so,
±1 g acceleration is applied to the sensor. Subtracting the larger output value from the
smaller one, and dividing the result by 2, leads to the actual sensitivity of the sensor. This
value changes very little over temperature and also very little over time. The Sensitivity
tolerance describes the range of sensitivities of a large population of sensors.
2.5.2 Zero-g level
Zero-g level offset (Off) describes the deviation of an actual output signal from the ideal
output signal if there is no acceleration present. A sensor in a steady state on a horizontal
surface will measure 0 g in X axis and 0 g in Y axis whereas the Z axis will measure 1 g. The
output is ideally in the middle of the dynamic range of the sensor (content of OUT registers
00h, 00h with 16 bit representation, data expressed as 2’s complement number). A deviation
from ideal value in this case is called Zero-g offset. Offset is to some extent a result of stress
to a precise MEMS sensor and therefore the offset can slightly change after mounting the
sensor onto a printed circuit board or exposing it to extensive mechanical stress. Offset
changes little over temperature, see “Zero-g level change vs. temperature”. The Zero-g level
of an individual sensor is stable over lifetime. The Zero-g level tolerance describes the range
of Zero-g levels of a population of sensors.
2.5.3 Self test
Self test allows to test the mechanical and electric part of the sensor, allowing the seismic
mass to be moved by means of an electrostatic test-force. The self-test function is off when
the self-test bit of CTRL_REG1 (control register 1) is programmed to ‘0‘. When the self-test
bit of CTRL_REG1 is programmed to ‘1‘an actuation force is applied to the sensor,
simulating a definite input acceleration. In this case the sensor outputs will exhibit a change
in their DC levels which is related to the selected full scale and depending on the Supply
Voltage through the device sensitivity. When Self Test is activated, the device output level is
given by the algebraic sum of the signals produced by the acceleration acting on the sensor
and by the electrostatic test-force. If the output signals change within the amplitude
specified inside Table 3 or 4 then the sensor is working properly and the parameters of the
interface chip are within the defined specification.
Doc ID 14956 Rev 415/51
FunctionalityAIS326DQ
3 Functionality
The AIS326DQ is a high performance, low-power, digital output 3-axes linear accelerometer
packaged in a QFN package. The complete device includes a sensing element and an IC
interface able to take the information from the sensing element and to provide a signal to the
external world through an SPI serial interface.
3.1 Sensing element
A proprietary process is used to create a surface micro-machined accelerometer. The
technology allows to carry out suspended silicon structures which are attached to the
substrate in a few points called anchors and are free to move in the direction of the sensed
acceleration. To be compatible with the traditional packaging techniques a cap is placed on
top of the sensing element to avoid blocking the moving parts during the moulding phase of
the plastic encapsulation.
When an acceleration is applied to the sensor the proof mass displaces from its nominal
position, causing an imbalance in the capacitive half-bridge. This imbalance is measured
using charge integration in response to a voltage pulse applied to the sense capacitor.
At steady state the nominal value of the capacitors are few pF and when an acceleration is
applied the maximum variation of the capacitive load is up to 100 pF.
3.2 IC interface
The complete measurement chain is composed by a low-noise capacitive amplifier which
converts into an analog voltage the capacitive unbalancing of the MEMS sensor and by
three Σ∆ analog-to-digital converters, one for each axis, that translate the produced signal
into a digital bitstream.
The Σ∆ converters are coupled with dedicated reconstruction filters which remove the high
frequency components of the quantization noise and provide low rate and high resolution
digital words.
The charge amplifier and the Σ∆ converters are operated respectively at 61.5 kHz and 20.5
kHz.
The data rate at the output of the reconstruction depends on the user selected decimation
factor (DF) and spans from 40 Hz to 2560 Hz.
The acceleration data may be accessed through an SPI interface thus making the device
particularly suitable for direct interfacing with a microcontroller.
The AIS326DQ features a data-ready signal (RDY) which indicates when a new set of
measured acceleration data is available thus simplifying data synchronization in digital
system employing the device itself.
The AIS326DQ may also be configured to generate an inertial wake-up, direction detection
and free-fall interrupt signal accordingly to a programmed acceleration event along the
enabled axes.
16/51Doc ID 14956 Rev 4
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