ST ACST8 User Manual

ACST8

Overvoltage protected AC switch

Features

■ Triac with overvoltage protection

■ High noise immunity: static dV/dt > 2000 V/µs

■ TO-220FPAB insulated package: 1500 V rms

Benefits

■ Enables equipment to meet IEC 61000-4-5

■ High off-state reliability with planar technology

■ Needs no external overvoltage protection

■ Reduces the power passive component count

■ High immunity against fast transients

described in IEC 61000-4-4 standards

Applications

■ AC mains static switching in appliance and

industrial control systems

■ Drive of medium power AC loads such as:

– Universal motor of washing machine drum – Compressor for fridge or air conditioner

OUT

G

OUT

COM

TO-220AB

ACST830-8T

OUT

2

D

TO-220FPAB

ACST830-8FP

G

COM

PAK

ACST830-8G

Figure 1. Functional diagram

OUT

COM

G

OUT

Description

The ACST8 series belongs to the ACS™/ ACST power switch family built around A.S.D.

®

(application specific discrete) technology. This high performance device is suited to home appliances or industrial systems and drives an induction motor up to 8 A.

This ACST8 device embeds a Triac structure with a high voltage clamping device to absorb the inductive turn off energy and withstand line transients such as those described in the IEC 61000-4-5 standards.

Table 1. Device summary

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT

ACST8 shows a high noise immunity complying with IEC standards such as IEC 61000-4-4 (fast transient burst test).

February 2011 Doc ID 7463 Rev 9 1/13

TM: ACS is a trademark of STMicroelectronics. ®: A.S.D. is a registered trademark of STMicroelectronics

G

COM

8A

800 V

30 mA

www.st.com

13

Characteristics ACST8

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

TO-220FPAB T

TO-220AB /

2

I

On-state rms current (full sine wave)

T(RMS)

D

PA K

D2PAK with 1cm2 Cu

TSM

2

I

t Thermal constraint for fuse selection tp = 10 ms 42 A2s

dI/dt

VPP

P

G(AV)

P

GM

I

GM

T

stg

T

j

T

l

V

INS(RMS)

1. According to test described in IEC 61000-4-5 standard and Figure 18.

Table 3. Electrical characteristics per switch

initial = 25 °C, full cycle sine wave

T

j

Critical rate of rise on-state current

= 2 x I

I

G

(1)

Non repetitive line peak pulse voltage Tj = 25 °C 2 kV

GT, (tr

≤ 100 ns)

Average gate power dissipation Tj = 125 °C 0.1 W

Peak gate power dissipation (tp = 20 ms) Tj = 125 °C 10 W

Peak gate current (tp = 20 ms) Tj = 125 °C 1.6 A

Storage temperature range - 40 to + 150 °C

Operating junction temperature range - 40 to + 125 °C

Maximum lead soldering temperature during 10 s 260 °C

Insulation rms voltage

Non repetitive surge peak on-state current

I

Symbol Test conditions

(1)

I

GT

V

I

H

dV/dt

(dI/dt)c

V

1. Minimum IGT is guaranteed at 5% of I

2. For either positive or negative polarity of OUT pin with reference to COM pin

V

= 12 V, RL = 33 Ω I - II - III 25 °C Max 30 mA

OUT

V

= 12V, RL = 33 Ω I - II - III 25 °C Max 1.0 V

OUT

V

= V

DRM

GT

= 67% V

, RL = 3.3 kΩ I - II - III 125 °C Min 0.2 V

, gate open 125 °C Min 2000 V/µs

DRM

OUT

I

= 500 mA 25 °C Max 30 mA

OUT

I

= 1.2 x I

G

V

OUT

Without snubber 125 °C Min 8 A/ms

I

= 0.1 mA, t

CL

= 1 ms 25 °C Min 850 V

p

GT(Max)

I

GT

GD

(2)

L

(2)

CL

F = 50 Hz t

F = 60 Hz t

F = 120 Hz T

TO-220FPAB

Quadrant

T

j

I - II - III 25 °C Max 50 mA

= 91 °C

case

8A

= 105 °C

T

case

= 43 °C 2 A

T

amb

= 20 ms 80 A

p

= 16.7 ms 84 A

p

= 125 °C 100 A/µs

j

1500 V

Val ue Un it

2/13 Doc ID 7463 Rev 9

ACST8 Characteristics

Table 4. Static characteristics

Symbol Test conditions Value Unit

V

I

DRM

I

RRM

Table 5. Thermal resistances

ITM = 11.3 A tp = 500 µs Tj = 25 °C Max 1.5 V

TM

Threshold voltage Tj = 125 °C Max 0.9 V

TO

Dynamic resistance Tj = 125 °C Max 50 mΩ

R

D

Tj = 25 °C

V

OUT

= V

DRM

/ V

RRM

Tj = 125 °C 1 mA

Max

20 µA

Symbol Parameter Value Unit

TO-220FPAB TO-220AB

60

°C/W

R

Junction to ambient

th(j-a)

Junction to ambient (soldered on 1 cm2 copper pad) D2PA K 4 5

TO-220FPAB 3.6

R

Figure 2. Maximum power dissipation versus

Junction to case (AC)

th(j-c)

on-state rms current

TO-220AB, D2PA K 2

Figure 3. On-state rms current versus case

temperature (full cycle)

P(W)

10

α=180 °

9

8

7

6

5

4

3

2

1

0

012345678

I (A)

T(RMS)

180°

I (A)

T(RMS)

9

α=180°

8

7

6

5

4

3

2

1

0

0 25 50 75 100 125

T (°C)

C

TO-220FPAB

-

TO

220AB

2

PAC K

D

Doc ID 7463 Rev 9 3/13

Characteristics ACST8

Figure 4. On-state rms current versus

ambient temperature (free air convection, fulle cycle)

I (A)

T(RMS)

3.0

2.5

2.0

TO-220

1.5

1.0

0.5

0.0

0 25 50 75 100 125

D2PAK

Copper surface

2

= 1cm

T (°C)

amb

α=180°

Figure 6. Relative variation of gate trigger

current (I

) and voltage (VGT)

GT

versus junction temperature

IGT,VGT[Tj]/IGT,VGT[Tj=25 °C]

3.0

2.5

2.0

1.5

1.0

0.5

0.0

-50 -25 0 25 50 75 100 125

IGTQ3

Typical values

IGTQ1-Q2

VGTQ1-Q2-Q3

Tj(°C)

Figure 5. Relative variation of thermal

impedance versus pulse duration

K=[Z /R ]

1.0E+00

1.0E-01

1.0E-02

th th

TO-220AB

1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

TO-220FPAB

Z

th(j-c)

TO-220FPAB

Z

th(j-a)

t (s)

p

Figure 7. Relative variation of holding

current (IH) and latching current (IL) versus junction temperature

IH,IL[Tj]/IH,IL[Tj=25 °C]

2.5

2.0

1.5

1.0

I

0.5

0.0

-50 -25 0 25 50 75 100 125

Tj(°C)

L

I

H

Figure 8. Surge peak on-state current versus

Figure 9. Non repetitive surge peak on-state

number of cycles

I

(A)

TSM

90

80

70

60

50

40

30

Repetitive

T

=105 °C

C

20

10

0

1 10 100 1000

Non repetitive

T

initial=25 °C

j

Number of cycles

t=20ms

One cycle

4/13 Doc ID 7463 Rev 9

1000

100

10

1

0.01 0.10 1.00 10.00

current and corresponding value of

2

I

t versus sinusoidal pulse width

I

(A), I²t (A²s)

TSM

dI/dt limitation: 100 A/µs

sinusoidal pulse with width t < 10 ms

P

tP(ms)

Tjinitial=25 °C

I

TSM

I²t