ST ACST6 User Manual

ACST6

Overvoltage protected AC switch

Features

■ Triac with overvoltage protection

■ Low I

■ TO-220FPAB insulated package: 1500 V rms

(< 10 mA)

GT

Benefits

■ Enables equipment to meet IEC 61000-4-5

■ High off-state reliability with planar technology

■ Needs no external overvoltage protection

■ Reduces the power passive component count

■ High immunity against fast transients

described in IEC 61000-4-4 standards

Applications

■ AC mains static switching in appliance and

industrial control systems

■ Drive of medium power AC loads such as:

– Universal motor of washing machine drum – Compressor for fridge or air conditioner

OUT

G

OUT

COM

TO-220AB

ACST610-8T

OUT

G

COM

TO-220FPAB

ACST610-8FP

OUT

D²PAK

ACST610-8G

ACST610-8R

Figure 1. Functional diagram

OUT

G

OUT

COM

G

OUT

COM

I²PAK

Description

The ACST6 series belongs to the ACS™/ACST power switch family built with A.S.D. specific discrete) technology. This high performance device is suited to home appliances or industrial systems, and drives loads up to 6 A.

This ACST6 switch embeds a Triac structure and a high voltage clamping device able to absorb the inductive turn-off energy and withstand line transients such as those described in the IEC 61000-4-5 standards. The ACST610 needs only low gate current to be activated (I

< 10 mA) and still shows a high noise

GT

immunity complying with IEC standards such as IEC 61000-4-4 (fast transient burst test).

July 2010 Doc ID 7297 Rev 10 1/15

®

(application

G

COM

Table 1. Device summary

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT

6A

800 V

10 mA

TM: ACS is a trademark of STMicroelectronics. ®: A.S.D. is a registered trademark of STMicroelectronics

www.st.com

15

Characteristics ACST6

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

TO-220FPAB T

TO-220AB/

2

I

T(RMS)

I

TSM

I

dI/dt

V

P

G(AV)

P

I

GM

T

V

INS(RMS)

On-state rms current (full sine wave)

Non repetitive surge peak on-state current Tj initial = 25 °C, ( full cycle sine wave)

2

tI2t for fuse selection tp = 10 ms 13 A2s

Critical rate of rise on-state current

= 2 x I

I

G

Non repetitive line peak pulse voltage

PP

GT, (tr

≤ 100 ns)

(1)

Average gate power dissipation Tj = 125 °C 0.1 W

Peak gate power dissipation (tp = 20 µs) Tj = 125 °C 10 W

GM

Peak gate current (tp = 20 µs) Tj = 125 °C 1.6 A

Storage temperature range -40 to +150 °C

stg

T

Operating junction temperature range -40 to +125 °C

j

Maximum lead solder temperature during 10 ms (at 3 mm from plastic case) 260 °C

T

l

Insulation rms voltage

1. According to test described in IEC 61000-4-5 standard and Figure 19.

Table 3. Electrical characteristics

D

PA K / I2PA K

D2PA K w i t h

2

copper

1cm

F = 60 Hz t

F = 50 Hz t

F = 120 Hz T

TO-220FPAB

= 92 °C

c

6

= 106 °C

T

c

= 62 °C 1.5

T

amb

= 16.7 ms 47 A

p

= 20 ms 45 A

p

= 125 °C 100 A/µs

j

Tj = 25 °C 2 kV

1500 V

A

Symbol Test conditions Quadrant T

(1)

I

GT

V

I

H

dV/dt

(dI/dt)

V

1. Minimum IGT is guaranteed at 5% of IGT max

V

= 12 V, RL = 33 Ω I - II - III 25 °C MAX. 10 mA

OUT

V

= 12 V, RL = 33 Ω I - II - III 25 °C MAX. 1.0 V

GT

GD

I

CL

(2)

L

OUT

V

= V

OUT

I

= 500 mA 25 °C MAX. 25 mA

OUT

I

= 1.2 x I

G

I

= 1.2 x I

G

(2)

V

OUT

(2)

(dV/dt)c = 15 V/µs 125 °C MIN. 3.5 A/ms

c

I

= 0.1 mA, t

CL

, RL = 3.3 kΩ I - II - III 125 °C MIN. 0.2 V

DRM

GT

= 67 % V

, gate open 125 °C MIN. 500 V/µs

DRM

= 1 ms 25 °C MIN. 850 V

p

2. For both polarities of OUT pin referenced to COM pin

2/15 Doc ID 7297 Rev 10

j

Val ue Unit

I - III 25 °C MAX. 30 mA

II 25 °C MAX. 40 mA

ACST6 Characteristics

Table 4. Static characteristics

Symbol Test conditions Value Unit

I

= 2.1 A, t

OUT

(1)

V

R

I I

TM

T0

(1)

d

DRM

RRM

(1)

= 8.5 A, t

I

OUT

Threshold voltage Tj = 125 °C MAX. 0.9 V

Dynamic resistance Tj = 125 °C MAX. 80 mΩ

V

= V

OUT

1. For both polarities of OUT pin referenced to COM pin

Table 5. Thermal resistances

Symbol Parameter Value Unit

= 500 µs

p

= 500 µs 1.7

p

Tj = 25 °C MAX.

Tj = 25 °C MAX. 20 µA

/ V

DRM

RRM

= 125 °C MAX. 500 µA

T

j

1.4 V

Rt

h(j-a)

2

copper pad) D2PA K 4 5

R

Junction to ambient (soldered on 1 cm

Junction to case for full cycle sine wave conduction

th(j-c)

Figure 2. Maximum power dissipation versus

rms on-state current

P(W)

Junction to ambient

8

α = 180°

7

6

5

4

3

2

1

0

0123456

180°

I

(A)

T(RMS)

TO-220AB TO-220FPAB

2

PAK 65

I

60

°C/W

TO-220FPAB 4.25

TO-220AB

2

D

PA K , I2PA K

2.5

°C/W

Figure 3. On-state rms current versus case

temperature (full cycle)

I

(A)

T(RMS)

7

6

5

4

3

2

1

0

0 25 50 75 100 125

TO-220FPAB

TC(°C)

TO-220AB

D²PAK

I²PAK

α

= 180°

Doc ID 7297 Rev 10 3/15

Characteristics ACST6

Figure 4. On-state rms current versus

ambient temperature

Figure 5. Relative variation of thermal

impedance versus pulse duration

(free air convection, full cycle)

I

(A)

T(RMS)

2.5

2.0

1.5

TO-220FPAB

TO220AB

1.0

0.5

0.0

0 25 50 75 100 125

I2PAK

D2PAK with

copper

surface = 1

2

cm

Ta(°C)

α=180°

Figure 6. Relative variation of gate trigger

current (I

) and voltage (VGT)

GT

versus junction temperature

Figure 7. Relative variation of holding

K = [Zth/ Rth]

1.0E+00

Z

th(j-c)

Z

TO-220AB

D²PAK

1.0E-01

I²PAK

TO-220FPAB

1.0E-02

1.0E-03 1.0E-01 1.0E+01 1.0E+03

current (IH) and latching current (IL) versus junction temperature

th(j-a)

tp(s)

IGT,VGT[Tj] / IGT,VGT[Tj= 25 °C]

3.0

2.5

2.0

1.5

1.0

0.5

0.0

-50 -25 0 25 50 75 100 125

IGTQ3

V Q1-Q2-Q3

GT

IGTQ1-Q2

Figure 8. Surge peak on-state current

versus number of cycles

I

(A)

TSM

50

40

30

20

Repetitive TC=106 °C

10

0

1 10 100 1000

Non repetitive

Tjinitial = 25 °C

(typical values)

t = 20 ms

One cycle

Number of cycles

Tj(°C)

IH,IL[Tj] / IH,IL[Tj= 25 °C]

2.5

2.0

1.5

1.0

0.5

0.0

-50 -25 0 25 50 75 100 125

Tj(°C)

(typical values)

I

L

I

H

Figure 9. Non repetitive surge peak on-state

current and corresponding value of

2

I

t versus sinusoidal pulse width

I

(A), I²t (A²s)

TSM

1000

100

10

1

0.01 0.10 1.00 10.00

dl /dt limitation: 100 A / µs

Tjinitial = 25 °C

I

TSM

I²t

tp(ms)

4/15 Doc ID 7297 Rev 10

ACST6 Characteristics

Figure 10. On-state characteristics

(maximum values)

ITM(A)

100

10

Tj= 125 °C

1

012345

Tj= 25 °C

Tjmax: Vto= 0.90 V Rd= 80 m

VTM(V)

Ω

Figure 12. Relative variation of static dV/dt

immunity versus junction temperature (gate open)

dV/dt [Tj] / dV/dt [Tj= 125 °C]

6

5

4

VD=VR= 536 V

Figure 11. Relative variation of critical rate of

decrease of main current (dI/dt)

c

versus junction temperature

(dl/dt)c[Tj] / (dl/dt)c[Tj= 125 °C]

8

7

6

5

4

3

2

1

0

25 50 75 100 125

Tj(°C)

Figure 13. Relative variation of leakage

current versus junction temperature

I

DRM/IRRM[Tj;VDRM/VRRM

1.0E+00

Different blocking voltages

1.0E-01

V

DRM=VRRM

] / I

DRM/IRRM[Tj

V

DRM=VRRM

= 600 V

= 125 °C; 800 V]

= 800V

3

2

1

0

25 50 75 100 125

Figure 14. Relative variation of clamping

voltage (V

) versus junction

CL

temperature (minimum values)

V[Tj] / V [Tj= 25 °C]

CL CL

1.15

1.10

1.05

1.00

0.95

0.90

0.85

-50 -25 0 25 50 75 100 125

Tj(°C)

1.0E-02

1.0E-03

25 50 75 100 125

V

DRM=VRRM

= 200 V

Tj(°C)

Figure 15. Thermal resistance junction to

ambient versus copper surface under tab

Rth(j-a)(°C/W)

80

70

60

50

40

30

20

10

0

0 5 10 15 20 25 30 35 40

Printed circuit board FR4, copper thickness = 35 µm

SCU(cm²)

D²PAK

Doc ID 7297 Rev 10 5/15