ST ACST4 User Manual
Features
ACST4
Overvoltage protected AC switch
■ Triac with overvoltage protection
■ Low I
(I
■ High noise immunity: static dV/dt > 1000 V/µs
■ TO-220FPAB insulated package: 1500 V rms
(<10 mA) or high immunity
GT
<35 mA) version
GT
Benefits
■ Enables equipment to meet IEC 61000-4-5
■ High off-state reliability with planar technology
■ Needs no external overvoltage protection
■ Reduces the power passive component count
■ High immunity against fast transients
described in IEC 61000-4-4 standards
Applications
■ AC mains static switching in appliance and
industrial control systems
■ Drive of medium power AC loads such as:
– Universal motor of washing machine drum
– Compressor for fridge or air conditioner
OUT
G
COM
DPAK
ACST410-8B
ACST435-8B
TO-220FPAB
ACST410-8FP
ACST435-8FP
Figure 1. Functional diagram
OUT
G
COM
Table 1. Device summary
Symbol Value Unit
G
OUT
COM
Description
The ACST4 series belongs to the ACS™/ACST
power switch family built with A.S.D.
specific discrete) technology. This high
performance device is suited to home appliances
®
(application
I
T(RMS)
V
DRM/VRRM
(ACST410) 10 mA
I
GT
I
(ACST435) 35 mA
GT
4A
800 V
or industrial systems, and drives loads up to 4 A.
This ACST4 switch embeds a Triac structure and
a high voltage clamping device able to absorb the
inductive turn-off energy and withstand line
transients such as those described in the
IEC 61000-4-5 standards. The ACST410 needs
only a low gate current to be activated (I
mA) and still shows a high noise immunity
complying with IEC standards such as
GT
< 10
TM: ACS is a trademark of STMicroelectronics.
®: A.S.D. is a registered trademark of
STMicroelectronics
IEC 61000-4-4 (fast transient burst test).
December 2009 Doc ID 8766 Rev 5 1/13
www.st.com
13
Characteristics ASCT4
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
TO-220FPAB T
I
T(RMS)
On-state rms current (full sine wave)
DPAK T
DPAK with
2
0.5 cm
I
TSM
I
dI/dt
V
P
G(AV)
P
I
GM
T
V
INS(RMS)
Non repetitive surge peak on-state current
Tj initial = 25 °C, ( full cycle sine wave)
2
tI2t for fuse selection tp = 10 ms 6 A2s
Critical rate of rise on-state current
= 2 x I
I
G
Non repetitive line peak pulse voltage
PP
GT, (tr
≤ 100 ns)
Average gate power dissipation Tj = 125 °C 0.1 W
Peak gate power dissipation (tp = 20 µs) Tj = 125 °C 10 W
GM
Peak gate current (tp = 20 µs) Tj = 125 °C 1.6 A
Storage temperature range -40 to +150 °C
stg
T
Operating junction temperature range -40 to +125 °C
j
Maximum lead solder temperature during 10 ms (at 3 mm from plastic case) 260 °C
T
l
Insulation rms voltage
1. According to test described in IEC 61000-4-5 standard and Figure 19.
Table 3. Electrical characteristics
F = 60 Hz t
F = 50 Hz t
F = 120 Hz T
(1)
TO-220FPAB
copper
= 102 °C
c
= 112 °C
c
T
= 60 °C 1
amb
= 16.7 ms 32 A
p
= 20 ms 30 A
p
= 125 °C 100 A/µs
j
4
Tj = 25 °C 2 kV
1500 V
A
Symbol Test conditions Quadrant T
(1)
I
GT
V
V
I
H
dV/dt
(dI/dt)
(dI/dt)
V
1. Minimum IGT is guaranteed at 5% of IGT max
V
= 12 V, RL = 33 Ω I - II - III 25 °C MAX. 10 35 mA
OUT
V
= 12 V, RL = 33 Ω I - II - III 25 °C MAX. 1.0 1.1 V
GT
GD
I
(2)
L
CL
OUT
V
= V
OUT
I
= 500 mA 25 °C MAX. 20 25 mA
OUT
I
= 1.2 x I
G
(2)
V
OUT
(2)
Without snubber 125 °C MIN. 5 A/ms
c
(2)
(dV/dt)c = 15 V/µs 125 °C 2 A/ms
c
I
= 0.1 mA, t
CL
, RL = 3.3 kΩ I - II - III 125 °C MIN. 0.2 V
DRM
GT
= 67 % V
, gate open 125 °C MIN. 500 1000 V/µs
DRM
= 1 ms 25 °C MIN. 850 V
p
I - II - III 25 °C MAX. 40 60 mA
2. For both polarities of OUT pin referenced to COM pin
2/13 Doc ID 8766 Rev 5
j
ACST410 ACST435 Unit
ASCT4 Characteristics
Table 4. Static characteristics
Symbol Test conditions Value Unit
(1)
V
TM
V
T0
R
I
DRM
I
RRM
1. For both polarities of OUT pin referenced to COM pin
Table 5. Thermal resistances
Symbol Parameter Value Unit
I
= 5.6 A, t
OUT
(1)
Threshold voltage Tj = 125 °C MAX. 0.9 V
(1)
Dynamic resistance Tj = 125 °C MAX. 110 mΩ
d
= 500 µs Tj = 25 °C MAX. 1.7 V
p
Tj = 25 °C MAX. 20 µA
= V
V
OUT
DRM
/ V
RRM
= 125 °C MAX. 500 µA
T
j
Rt
R
h(j-a)
th(j-c)
Junction to ambient (soldered on 0.5 cm
Junction to case for full cycle sine wave conduction
2
Figure 2. Maximum power dissipation versus
on-state rms current
P(W)
Junction to ambient TO-220FPAB 60
6
α = 180°
5
4
3
2
1
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
180°
I
(A)
T(RMS)
copper pad) DPAK 70
TO-220FPAB 4.6
DPAK 2.6
Figure 3. On-state rms current versus case
temperature (full cycle)
I
(A)
T(RMS)
5
4
3
2
1
0
0 25 50 75 100 125
TO220FPAB
α=180°
TC(°C)
°C/W
°C/W
DPAK
Doc ID 8766 Rev 5 3/13
Characteristics ASCT4
Figure 4. On-state rms current versus
ambient temperature (free air
Figure 5. Relative variation of thermal
impedance versus pulse duration
convection, full cycle)
I
(A)
T(RMS)
2.0
TO-220FPAB
1.5
DPAK with copper
surface = 0.5 cm
1.0
0.5
0.0
0 25 50 75 100 125
2
Ta(°C)
α=180°
Figure 6. Relative variation of gate trigger
current (I
) and voltage (VGT)
GT
versus junction temperature
IGT,VGT[Tj] / IGT,VGT[Tj= 25 °C]
3.0
2.5
2.0
IGTQ3
IGTQ1-Q2
1.5
V Q1-Q2-Q3
1.0
GT
0.5
Tj(°C)
0.0
-50 -25 0 25 50 75 100 125
(typical values)
K = [Zth/ Rth]
1.0E+00
1.0E-01
DPAK
TO-220FPAB
Z
th(j-c)
Z
th(j-a)
Tp(s)
1.0E-02
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Figure 7. Relative variation of holding
current (IH) and latching current (IL)
versus junction temperature
IH,IL[Tj] / IH,IL[Tj= 25 °C]
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125
(typical values)
I
I
H
L
Tj(°C)
Figure 8. Surge peak on-state current
versus number of cycles
I
(A)
TSM
35
30
25
20
15
10
Repetitive
=102°C
T
C
5
0
1 10 100 1000
Non repetitive
initial=25 °C
T
j
4/13 Doc ID 8766 Rev 5
t=20ms
One cycle
Number of cycles
Figure 9. Non repetitive surge peak on-state
current and corresponding value of
2
I
t versus sinusoidal pulse width
I
(A), I²t (A²s)
TSM
1000
100
10
1
0.01 0.10 1.00 10.00
dl /dt limitation: 100 A / µs
Tjinitial = 25 °C
I
TSM
I²t
t (ms)
p
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