ST ACST4 User Manual

ACST4

Overvoltage protected AC switch

Features

■Triac with overvoltage protection

■Low IGT (<10 mA) or high immunity (IGT<35 mA) version

■High noise immunity: static dV/dt > 1000 V/µs

■TO-220FPAB insulated package: 1500 V rms

Benefits

■Enables equipment to meet IEC 61000-4-5

■High off-state reliability with planar technology

■Needs no external overvoltage protection

■Reduces the power passive component count

■High immunity against fast transients described in IEC 61000-4-4 standards

Applications

■AC mains static switching in appliance and industrial control systems

■Drive of medium power AC loads such as:

–Universal motor of washing machine drum

–Compressor for fridge or air conditioner

Description

The ACST4 series belongs to the ACS™/ACST power switch family built with A.S.D.® (application specific discrete) technology. This high performance device is suited to home appliances or industrial systems, and drives loads up to 4 A.

This ACST4 switch embeds a Triac structure and a high voltage clamping device able to absorb the inductive turn-off energy and withstand line transients such as those described in the

IEC 61000-4-5 standards. The ACST410 needs only a low gate current to be activated (IGT < 10 mA) and still shows a high noise immunity complying with IEC standards such as

IEC 61000-4-4 (fast transient burst test).

OUT

	G	G
	COM	OUT
		COM
	DPAK	TO-220FPAB

ACST410-8B ACST410-8FP

ACST435-8B ACST435-8FP

Figure 1. Functional diagram

OUT

G

COM

Table 1.	Device summary
Symbol		Value	Unit
IT(RMS)		4	A
VDRM/VRRM		800	V
IGT (ACST410)		10	mA
IGT (ACST435)		35	mA

TM: ACS is a trademark of STMicroelectronics.

®: A.S.D. is a registered trademark of STMicroelectronics

December 2009

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	Characteristics						ASCT4
	1		Characteristics
	Table 2.		Absolute ratings (limiting values)
	Symbol		Parameter			Value	Unit
				TO-220FPAB	Tc = 102 °C	4
	IT(RMS)		On-state rms current (full sine wave)	DPAK	Tc = 112 °C		A
				DPAK with	Tamb = 60 °C	1
				2
				0.5 cm copper
	ITSM		Non repetitive surge peak on-state current	F = 60 Hz	tp = 16.7 ms	32	A
			Tj initial = 25 °C, ( full cycle sine wave)	F = 50 Hz	tp = 20 ms	30	A
	I2t		I2t for fuse selection		tp = 10 ms	6	A2s
	dI/dt		Critical rate of rise on-state current	F = 120 Hz	Tj = 125 °C	100	A/µs
			IG = 2 x IGT, (tr ≤ 100 ns)
	V	PP	Non repetitive line peak pulse voltage (1)		T = 25 °C	2	kV
					j
	PG(AV)		Average gate power dissipation		Tj = 125 °C	0.1	W
	PGM		Peak gate power dissipation (tp = 20 µs)		Tj = 125 °C	10	W
	IGM		Peak gate current (tp = 20 µs)		Tj = 125 °C	1.6	A
	Tstg		Storage temperature range			-40 to +150	°C
	Tj		Operating junction temperature range			-40 to +125	°C
	Tl		Maximum lead solder temperature during 10 ms (at 3 mm from plastic case)			260	°C
	VINS(RMS)		Insulation rms voltage	TO-220FPAB		1500	V

1. According to test described in IEC 61000-4-5 standard and Figure 19.

Table 3.	Electrical characteristics
Symbol	Test conditions	Quadrant	Tj		ACST410	ACST435	Unit
(1)	VOUT = 12 V, RL = 33 Ω	I - II - III	25 °C	MAX.	10	35	mA
IGT
VGT	VOUT = 12 V, RL = 33 Ω	I - II - III	25 °C	MAX.	1.0	1.1	V
VGD	VOUT = VDRM, RL = 3.3 kΩ	I - II - III	125 °C	MIN.	0.2		V
IH(2)	IOUT = 500 mA		25 °C	MAX.	20	25	mA
IL	IG = 1.2 x IGT	I - II - III	25 °C	MAX.	40	60	mA
dV/dt (2)	VOUT = 67 % VDRM, gate open		125 °C	MIN.	500	1000	V/µs
(dI/dt)c(2)	Without snubber		125 °C	MIN.		5	A/ms
(dI/dt)c(2)	(dV/dt)c = 15 V/µs		125 °C		2		A/ms
VCL	ICL = 0.1 mA, tp = 1 ms		25 °C	MIN.	850		V

1.Minimum IGT is guaranteed at 5% of IGT max

2.For both polarities of OUT pin referenced to COM pin

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ASCT4							Characteristics
Table 4.		Static characteristics
Symbol			Test conditions				Value		Unit
(1)	IOUT = 5.6 A, tp = 500 µs			Tj = 25 °C	MAX.	1.7			V
VTM
VT0(1)	Threshold voltage			Tj = 125 °C	MAX.	0.9			V
R (1)	Dynamic resistance			T = 125 °C	MAX.	110			mΩ
d				j
IDRM	VOUT = VDRM/ VRRM			Tj = 25 °C	MAX.	20			µA
IRRM				Tj = 125 °C	MAX.	500			µA
1. For both polarities of OUT pin referenced to COM pin
Table 5.		Thermal resistances
Symbol			Parameter				Value		Unit
Rth(j-a)		Junction to ambient			TO-220FPAB		60		°C/W
		Junction to ambient (soldered on 0.5 cm2 copper pad)			DPAK		70
Rth(j-c)		Junction to case for full cycle sine wave conduction			TO-220FPAB		4.6		°C/W
					DPAK		2.6
Figure 2.		Maximum power dissipation versus Figure 3.			On-state rms current versus case
		on-state rms current			temperature (full cycle)

6	P(W)									IT(RMS)(A)
	α = 180°					180°				5				α=180°
5										4				DPAK
													TO220FPAB
4
										3
3
2										2
1										1
														TC (°C)
								IT(RMS)(A)
0										0
	0.0	0.5	1.0	1.5	2.0	2.5	3.0	3.5	4.0	0	25	50	75	100	125

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Characteristics	ASCT4
Figure 4. On-state rms current versus	Figure 5. Relative variation of thermal
ambient temperature (free air	impedance versus pulse duration
convection, full cycle)

IT(RMS)(A)

K = [Zth / Rth]

2.0

1.0E+00

Zth(j-c)

α=180°

TO-220FPAB

DPAK

Zth(j-a)

1.5

DPAK with copper

surface = 0.5 cm2

1.0

1.0E-01

TO-220FPAB

0.5

0.0

Ta(°C)

Tp(s)

1.0E-02

0

25

50

75

100

125

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

Figure 6. Relative variation of gate trigger	Figure 7. Relative variation of holding
current (IGT) and voltage (VGT)	current (IH) and latching current (IL)
versus junction temperature	versus junction temperature

3.0	I		, V		[T	] / I	, V		[T	j	= 25 °C]					IH, IL[Tj] / IH, IL[Tj = 25 °C]
		GT		GT	j		GT	GT								2.5						(typical values)
														(typical values)
2.5				IGT Q3												2.0
2.0							IGT Q1-Q2
																1.5
1.5
1.0			VGT Q1-Q2-Q3													1.0
0.5																0.5						IL
																						IH
												Tj(°C)											Tj(°C)
0.0																0.0
-50				-25			0			25		50	75	100	125
																-50	-25	0	25	50	75	100	125

Figure 8. Surge peak on-state current	Figure 9. Non repetitive surge peak on-state
versus number of cycles	current and corresponding value of
	I2t versus sinusoidal pulse width

ITSM(A)				ITSM(A), I²t (A²s)
35				1000	dl /dt limitation: 100 A / µs		Tj initial = 25 °C
30
			t=20ms
25	Non repetitive		One cycle	100
							ITSM
20	Tj	initial=25 °C
15
10				10			I²t
Repetitive
TC=102°C
5
0			Number of cycles	1			tp (ms)
1	10	100	1000	0.01	0.10	1.00	10.00

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