ST ACST2 User Manual

ACST2

Overvoltage protected AC switch

Features

■Triac with overvoltage crowbar technology

■High noise immunity: static dV/dt > 500 V/µs

■ACST210-8FP, in the TO-220FPAB package, provides insulation voltage rated at 1500 V rms

Benefits

■Enables equipment to meet IEC 61000-4-5

■High off-state reliability with planar technology

■Needs no external overvoltage protection

■Reduces component count

■Interfaces directly with the micro-controller

■High immunity against fast transients described in IEC 61000-4-4 standards

Applications

■AC on/off static switching in appliances and industrial control systems

■Driving low power highly inductive loads like solenoid, pump, fan, and micro-motor

Description

The ACST2 series belongs to the ACS™/ACST power switch family built with A.S.D.® (application specific discrete) technology. This high performance device is suited to home appliances or industrial systems and drives loads up to 2 A.

This ACST2 switch embeds a Triac structure with a high voltage clamping device to absorb the inductive turn-off energy and withstand line transients such as those described in the

IEC 61000-4-5 standards. The component needs a low gate current to be activated (IGT < 10 mA) and still shows a high electrical noise immunity complying with IEC standards such as

IEC 61000-4-4 (fast transient burst test).

OUT

G

COM

G

OUT

COM

TO-220FPAB DPAK

ACST210-8FP ACST210-8B

Figure 1. Functional diagram

OUT

G

COM

Table 1.	Device summary
Symbol		Value	Unit
IT(RMS)		2	A
VDRM/VRRM		800	V
IGT		10	mA

TM: ACS is a trademark of STMicroelectronics ®: A.S.D. is a registered trademark of STMicroelectronics

July 2010

Doc ID 13304 Rev 3

1/13

www.st.com

Characteristics

ACST2

1

Characteristics

Table 2.

Absolute maximum ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

On-state rms current (full sine wave)

TO-220FPAB

Tc = 105 °C

2

A

DPAK

Tc = 110 °C

ITSM

Non repetitive surge peak on-state current

F = 60 Hz

t = 16.7 ms

8.4

A

(full cycle sine wave, TJ initial = 25 °C)

F = 50 Hz

t = 20 ms

8.0

I²t

I²t Value for fusing

tp = 10 ms

0.5

A²s

dI/dt

Critical rate of rise of on-state current

F = 120 Hz

Tj = 125 °C

50

A/µs

IG = 2 x IGT, tr = 100 ns

VPP (1)

Non repetitive line peak mains voltage (1)

Tj = 25 °C

2

kV

PG(AV)

Average gate power dissipation

Tj = 125 °C

0.1

W

PGM

Peak gate power dissipation (tp = 20 µs)

Tj = 125 °C

10

W

IGM

Peak gate current (tp = 20 µs)

Tj = 125 °C

1.6

A

Tstg

Storage junction temperature range

-40 to +150

°C

Tj

Operating junction temperature range

-40 to +125

Tl

Maximum lead soldering temperature during 10 s (at 3 mm from plastic case)

260

°C

VINS(RMS)

Insulation rms voltage

T0-220FPAB

1500

V

1. According to test described in IEC 61000-4-5 standard and Figure 18

Table 3.

Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Symbol

Test conditions

Quadrant

Value

Unit

(1)

VOUT = 12 V, RL = 33 Ω

I - II - III

MAX

10

mA

IGT

VGT

VOUT = 12 V, RL = 33 Ω

I - II - III

MAX

1.1

V

VGD

VOUT = VDRM, RL = 3.3 kΩ,Tj = 125 °C

I - II - III

MIN

0.2

V

I

(2)

I

= 100 mA

MAX

10

mA

H

OUT

IL

IG = 1.2 x IGT

I - III

MAX

25

mA

II

MAX

35

dV/dt (2)

V

= 67% V

DRM

gate open, T = 125 °C

MIN

500

V/µs

OUT

j

(dI/dt)c (2)

(dV/dt)c = 15 V/µs, T = 125 °C

MIN

0.5

A/ms

j

VCL

ICL = 0.1 mA, tp = 1 ms, Tj = 25 °C

MIN

850

V

1.Minimum IGT is guaranteed at 5% of IGT max

2.For both polarities of OUT pin referenced to COM pin

2/13	Doc ID 13304 Rev 3

ACST2

Characteristics

Table 4.

Static electrical characteristics

Symbol

Test conditions

Value

Unit

(1)

ITM = 2.8 A, tp = 500 µs

Tj = 25 °C

MAX

2

V

VTM

VTO(1)

Threshold voltage

Tj = 125 °C

MAX

0.9

V

RD(1)

Dynamic resistance

Tj = 125 °C

MAX

250

mΩ

IDRM

VOUT = VDRM / VRRM

Tj = 25 °C

MAX

10

µA

IRRM

T = 125 °C

0.5

mA

j

1. For both polarities of OUT pin referenced to COM pin

Table 5.

Thermal resistances

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case (AC)

DPAK

4.5

TO-220FPAB

7

°C/W

Rth(j-a)

Junction to ambient

TO-220FPAB

60

SCU (1)= 0.5 cm²

DPAK

70

1. SCU = copper surface under tab

Figure 2. Maximum power dissipation versus Figure 3. on-state rms current (full cycle)

On-state rms current versus case temperature

	P(W)											I	(A)
	2.8
												T(RMS)
												2.4
		α=180 °
												2.2					DPAK
	2.4
												2.0
	2.0											1.8				TO-220FPAB
												1.6
	1.6											1.4
												1.2
	1.2											1.0
	0.8											0.8
												0.6
										180°		0.4	α=180 °
	0.4
												0.2
						IT(RMS)(A)									TC(°C)
												0.0
	0.0
												0	25	50	75	100	125
	0.0	0.2	0.4	0.6	0.8	1.0	1.2	1.4	1.6	1.8	2.0

Doc ID 13304 Rev 3

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Characteristics	ACST2
Figure 4. On-state rms current versus	Figure 5. Relative variation of thermal
ambient temperature	impedance versus pulse duration
	TO-220FPAB

I	(A)					K=[Z	/R	th	]
						th
T(RMS)						1.00
1.8
1.6				α=180 °
				Printed circuit board FR4					Zth(j-c)
				Natural convection
1.4				SCU=0.5 cm²
1.2
1.0						0.10					Zth(j-a)
0.8
0.6
0.4
0.2			Tamb(°C)											TO-220FPAB
											tP(s)
0.0						0.01
0	25	50	75	100	125	1.0E-04	1.0E-03			1.0E-02	1.0E-01	1.0E+00	1.0E+01	1.0E+02	1.0E+03

Figure 6. Relative variation of thermal	Figure 7. Relative variation of gate trigger,
impedance versus pulse duration	holding and latching current versus
DPAK	junction temperature

K=[Z

th

/R

th

]

I

, I

, I

L

[T

] / I

,

I

, I

[T

=25 °C]

1.0E+00

GT

H

J

GT

H

L

j

2.8

2.6

Zth(j-c)

2.4

IGT

Typical values

2.2

2.0

1.8

1.6

IL & IH

1.0E-01

Zth(j-a)

1.4

1.2

1.0

0.8

0.6

DPAK

0.4

0.2

tP(s)

Tj(°C)

1.0E-02

0.0

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

1.0E+03

-40 -30 -20 -10

0

10

20

30

40

50

60

70

80

90 100 110 120 130

Figure 8. Relative variation of static dV/dt	Figure 9. Relative variation of critical rate of
versus junction temperature	decrease of main current versus
	reapplied dV/dt (typical values)

dV/dt [T	] / dV/dt [T	=125 °C]				(dI/dt)	c	[ (dV/dt)	c	] / Specified (dI/dt)	c
j	j					2.0
100
					VOUT=540 V	1.8							VOUT=300 V
						1.6
						1.4
						1.2
10						1.0
						0.8
						0.6
						0.4
			Tj(°C)			0.2
1						0.0				(dV/dt)c(V/µs)
25	50		75	100	125	0.1				1.0		10.0	100.0

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