ST ACST2 User Manual

ACST2

Overvoltage protected AC switch

Features

■ Triac with overvoltage crowbar technology

■ High noise immunity: static dV/dt > 500 V/µs

■ ACST210-8FP, in the TO-220FPAB package,

provides insulation voltage rated at 1500 V rms

Benefits

■ Enables equipment to meet IEC 61000-4-5

■ High off-state reliability with planar technology

■ Needs no external overvoltage protection

■ Reduces component count

■ Interfaces directly with the micro-controller

■ High immunity against fast transients

described in IEC 61000-4-4 standards

Applications

■ AC on/off static switching in appliances and

industrial control systems

■ Driving low power highly inductive loads like

solenoid, pump, fan, and micro-motor

OUT

G

OUT

COM

TO-220FPAB

ACST210-8FP

ACST210-8B

Figure 1. Functional diagram

OUT

G

COM

Table 1. Device summary

G

COM

DPAK

Description

Symbol Value Unit

I

The ACST2 series belongs to the ACS™/ACST
power switch family built with A.S.D.

®

(application

specific discrete) technology. This high

T(RMS)

V

DRM/VRRM

I

GT

performance device is suited to home appliances
or industrial systems and drives loads up to 2 A.

This ACST2 switch embeds a Triac structure with
a high voltage clamping device to absorb the
inductive turn-off energy and withstand line
transients such as those described in the
IEC 61000-4-5 standards. The component needs
a low gate current to be activated (I
and still shows a high electrical noise immunity
complying with IEC standards such as
IEC 61000-4-4 (fast transient burst test).

July 2010 Doc ID 13304 Rev 3 1/13

< 10 mA)

GT

TM: ACS is a trademark of STMicroelectronics
®: A.S.D. is a registered trademark of
STMicroelectronics

2A

800 V

10 mA

www.st.com

13

Characteristics ACST2

1 Characteristics

Table 2. Absolute maximum ratings (limiting values)

Symbol Parameter Value Unit

I

T(RMS)

I

TSM

dI/dt

V

PP

P

G(AV)

P

I

GM

T

V

INS(RMS)

1. According to test described in IEC 61000-4-5 standard and Figure 18

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

On-state rms current (full sine wave)

DPAK T

Non repetitive surge peak on-state current
(full cycle sine wave, TJ initial = 25 °C)

²

²

tI

I

t Value for fusing tp = 10 ms 0.5 A²s

Critical rate of rise of on-state current

= 2 x IGT, tr = 100 ns

I

G

(1)

Non repetitive line peak mains voltage

F = 60 Hz t = 16.7 ms 8.4 A

F = 50 Hz t = 20 ms 8.0

F = 120 Hz Tj = 125 °C 50 A/µs

(1)

Average gate power dissipation Tj = 125 °C 0.1 W

Peak gate power dissipation (tp = 20 µs) Tj = 125 °C 10 W

GM

Peak gate current (tp = 20 µs) Tj = 125 °C 1.6 A

Storage junction temperature range

stg

T

Operating junction temperature range

j

T

Maximum lead soldering temperature during 10 s (at 3 mm from plastic case) 260 °C

l

Insulation rms voltage T0-220FPAB 1500 V

TO-220FPAB T

= 105 °C

c

= 110 °C

c

2

Tj = 25 °C 2 kV

-40 to +150

-40 to +125

A

°C

Symbol Test conditions Quadrant Value Unit

(1)

V

I

GT

V

I

V

GT

GD

(2)

H

= 12 V, RL = 33 Ω I - II - III MAX 10 mA

OUT

V

= 12 V, RL = 33 Ω I - II - III MAX 1.1 V

OUT

V

= V

OUT

I

= 100 mA MAX 10 mA

OUT

, RL = 3.3 kΩ,Tj = 125 °C I - II - III MIN 0.2 V

DRM

I - III MAX 25

I

L

dV/dt

(dI/dt)c

V

CL

1. Minimum IGT is guaranteed at 5% of IGT max

2. For both polarities of OUT pin referenced to COM pin

IG = 1.2 x I

(2)

V

OUT

(2)

(dV/dt)c = 15 V/µs, Tj = 125 °C MIN 0.5 A/ms

GT

= 67% V

II MAX 35

gate open, Tj = 125 °C MIN 500 V/µs

DRM

ICL = 0.1 mA, tp = 1 ms, Tj = 25 °C MIN 850 V

2/13 Doc ID 13304 Rev 3

mA

ACST2 Characteristics

(A)

Table 4. Static electrical characteristics

Symbol Test conditions Value Unit

(1)

V

V

R

I
I

TM

TO

D

DRM

RRM

I

= 2.8 A, tp = 500 µs Tj = 25 °C MAX 2 V

TM

(1)

Threshold voltage Tj = 125 °C MAX 0.9 V

(1)

Dynamic resistance Tj = 125 °C MAX 250 mΩ

V

OUT

= V

DRM

/ V

RRM

Tj = 25 °C

MAX

= 125 °C 0.5 mA

T

j

10 µA

1. For both polarities of OUT pin referenced to COM pin

Table 5. Thermal resistances

Symbol Parameter Value Unit

DPAK 4.5

R

th(j-c)

Junction to case (AC)

TO-220FPAB 7

TO-220FPAB 60

R

th(j-a)

1. SCU = copper surface under tab

Figure 2. Maximum power dissipation versus

P(W)

2.8

α=180 °

2.4

2.0

1.6

1.2

0.8

0.4

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Junction to ambient

on-state rms current (full cycle)

180°

I

(A)

T(RMS)

(1)

S

= 0.5 cm

CU

²

DPAK 70

Figure 3. On-state rms current versus case

temperature

I

T(RMS)

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

α=180 °

0.2

0.0

0 25 50 75 100 125

TC(°C)

TO-220FPAB

DPAK

°C/W

Doc ID 13304 Rev 3 3/13

Characteristics ACST2

Figure 4. On-state rms current versus

ambient temperature

I

(A)

T(RMS)

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0 25 50 75 100 125

T

(°C)

amb

α=180 °

Printed circuit board FR4

Natural convection

=0.5 cm²

S

CU

Figure 6. Relative variation of thermal

impedance versus pulse duration
DPAK

K=[Zth/Rth]

1.0E+00

Z

th(j-c)

Z

1.0E-01

1.0E-02

1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

th(j-a)

tP(s)

DPAK

Figure 8. Relative variation of static dV/dt

versus junction temperature

dV/dt [ Tj]/dV/dt[Tj=125 °C]

100

10

1

25 50 75 100 125

Tj(°C)

V

=540 V

OUT

Figure 5. Relative variation of thermal

impedance versus pulse duration
TO-220FPAB

K=[Zth/Rth]

1.00

Z

th(j-c)

Z

0.10

0.01

1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

th(j-a)

tP(s)

TO-220FPAB

Figure 7. Relative variation of gate trigger,

holding and latching current versus
junction temperature

IGT,IH,IL[TJ]/IGT,IH,IL[Tj=25 °C]

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

I

GT

IL& I

H

Tj(°C)

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130

Typical values

Figure 9. Relative variation of critical rate of

decrease of main current versus
reapplied dV/dt (typical values)

(dI/dt)c[(dV/dt)c] / Specified (dI/dt)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1.0 10.0 100.0

c

(dV/dt)c(V/µs)

V

=300 V

OUT

4/13 Doc ID 13304 Rev 3