ST ACST12 User Manual

Features

■ Triac with overvoltage crowbar technology

■ Low I

(I

■ High noise immunity: static dV/dt > 2000 V/µs

Benefits

■ Enables equipment to meet IEC 61000-4-5

■ High off-state reliability with planar technology

■ Need no external over voltage protection

■ Reduces the power passive component count

■ High immunity against fast transients

described in IEC 61000-4-4 standards

(<10 mA) or high immunity

GT

<35 mA) version

GT

ACST12

Overvoltage protected AC switch

OUT

G

OUT

COM

TO-220AB ACST1210-7T ACST1235-7T

Figure 1. Functional diagram

OUT

G

COM

D2PA K ACST1210-7G ACST1235-7G

OUT

Applications

■ AC mains static switching in appliance and

industrial control systems

■ Drive of medium power AC loads such as:

– Universal motor of washing machine drum – Compressor for fridge or air conditioner

Description

The ACST12 series belongs to the ACS™/ACST power switch family built with A.S.D. specific discrete) technology. This high performance device is suited to home appliances or industrial systems and drives loads up to 12 A.

This ACST12 switch embeds a Triac structure and a high voltage clamping device able to absorb the inductive turn-off energy and withstand line transients such as those described in the IEC 61000-4-5 standard. The ACST1210-7 needs a low gate current to be activated (I and still provides a high electrical noise immunity complying with the IEC 61000-4-4 standard. The ACST1235-7 offers an extremely high static dV/dt immunity of 2 kV/µs minimum.

®

(application

< 10 mA)

GT

G

COM

Table 1. Device summary

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT

TM: ACS is a trademark of STMicroelectronics

®: A.S.D. is a registered trademark of STMicroelectronics

12 A

700 V

10 or 35 mA

December 2010 Doc ID 15238 Rev 4 1/13

www.st.com

13

Characteristics ACST12

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

TO-220AB

2

PA K

I

T(RMS)

I

dI/dt

V

P

T

1. According to test described in IEC 61000-4-5 standard and Figure 19

Table 3. Electrical characteristics

On-state rms current full sine wave

Non repetitive surge peak on-state current

TSM

2

I

initial = 25 °C,( full cycle sine wave)

T

j

tI2t for fuse selection tp = 10 ms 95 A2s

Critical rate of rise on-state current

= 2 x I

I

G

Non repetitive line peak pulse voltage

PP

Average gate power dissipation Tj = 125 °C 0.1 W

G(AV)

Peak gate power dissipation (tp = 20 µs) Tj = 125 °C 10 W

GM

Peak gate current (tp = 20 µs) Tj = 125 °C 1.6 A

I

GM

Storage temperature range - 40 to + 150 °C

stg

Operating junction temperature range - 40 to + 125 °C

T

j

maximum lead soldering temperature during 10 s (at 3 mm from plastic case) 260 °C

T

l

GT, (tr

≤ 100 ns)

(1)

D

2

PA K

D with 1cm

2

of Cu

F = 60 Hz tp = 16.7 ms 126 A

F = 50 Hz t

F = 120 Hz T

Tc = 104 °C 12

= 47

T

amb

°C

= 20.0 ms 120 A

p

= 125 °C 100 A/µs

j

2

Tj = 125 °C 2 kV

A

Symbol Test conditions Quadrant T

(1)

I

GT

V

I

dV/dt

(dI/dt)c

V

GT

V

GD

(2)

I

H

OUT

I

G

L

(2)

V

(dV/dt)c = 15 V/µs

(2)

= 12 V, RL = 33 Ω I - II - III 25 °C MAX. 10 35 mA

OUT

= 12 V, RL = 33 Ω I - II - III 25 °C MAX. 1.0 V

OUT

= V

DRM

GT

= 67% V

, RL = 3.3 Ω I - II - III 125 °C MIN. 0.2 V

I - II - III 25 °C MAX. 50 70 mA

, gate open 125 °C MIN. 200 2000 V/µs

DRM

OUT

= 500 mA 25 °C MAX. 30 50 mA

= 1.2 x I

OUT

j

125 °C

Without snubber MIN. 14

V

1. Minimum IGT is guaranteed at 5% of IGT max

2. For both polarities of OUT pin referenced to COM pin

CL

I

= 0.1 mA, t

CL

= 1 ms 25 °C MIN. 850 V

p

2/13 Doc ID 15238 Rev 4

Val ue Un it

ACST1210-7 ACST1235-7 Unit

MIN. 5.3

A/ms

ACST12 Characteristics

Table 4. Static characteristics

Symbol Test conditions Value Unit

(1)

V

R

I I

I

= 17 A, t

TM

T0

DRM

RRM

OUT

(1)

Threshold voltage Tj = 125 °C MAX. 0.9 V

(1)

Dynamic resistance Tj = 125 °C MAX. 30 mΩ

d

V

= V

OUT

= 500 µs Tj = 25 °C MAX. 1.5 V

p

Tj = 25 °C

DRM

/ V

RRM

= 125 °C 1.5 mA

T

j

MAX.

20 µA

1. For both polarities of OUT pin referenced to COM pin

Table 5. Thermal characteristics

Symbol Parameter Value Unit

R

Junction to case (AC)

th(j-c)

TO-220AB

2

PAK ° C / W

D

1.5

°C/W

TO-220AB 60 °C/W

R

Figure 2. Maximum power dissipation versus

15 14 13 12 11 10

9 8 7 6 5 4 3 2 1 0

Figure 4. On-state rms current versus

Junction to ambient

th(j-a)

on-state rms current (full cycle)

P(W)

α

=180

°

I (A)

T(RMS)

0123456789101112

ambient temperature (free air

2

D

PAK with 1 cm2 of Cu 45 °C/W

Figure 3. On-state rms current versus case

temperature (full cycle)

(A)

I

T(RMS)

13

12

11

10

9

8

7

6

5

4

3

2

1

0

0 25 50 75 100 125

TC(°C)TC(°C)

Figure 5. Relative variation of thermal

impedance versus pulse duration

convection full cycle)

I

(A)

T(RMS)

3.0

2.5

D2PAK

With 1cm

2

of cu

1.0E+00

K=[Zth/Rth]

Z

(j

c)

-

th

Z

(j

a)

-

th

2.0

TO-220AB

1.5

1.0

0.5

0.0

0 25 50 75 100 125

T

(°C)

amb

Doc ID 15238 Rev 4 3/13

1.0E-01

tp(s)

1.0E-02

1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

Characteristics ACST12

I

(A)

Figure 6. On-state characteristics

(maximum values)

TM

1000

100

10

Tjmax :

V

= 0.90 V

to

R

d

= 30 mΩ

1

Tj=125 °C

Tj=25 °C

VTM(V)

Figure 8. Non repetitive surge peak on-state

current for a sinusoidal pulse and

2

t

Tjinitial=25 °C

I

TSM

10000

1000

corresponding value of I

22

I (A), I t (A s)

TSM

dI/dt limitation: 100 A/µs

Figure 7. Non repetitive surge peak on-state

current versus number of cycles (T

initial = 25 °C)

j

I(A)

TSM

130

120

110

100

90

80

70

60

50

40

30

20

Repetitive

T

=104 °C

10

C

0

1 10 100 1000

Non repetitive

initial=25 °C

T

j

Number of cycles

t=20ms

One cycle

Figure 9. Relative variation of gate triggering

current and gate voltage versus junction temperature (typical value)

I , V [T] / I , V [T = 25 °C]

GT GT j GT GT j

3.0

2.5

2.0

IGTQ3

IGTQ1-Q2

100

I²t

10

1

0.01 0.10 1.00 10.00

tP(ms)

Figure 10. Relative variation of holding

current (I

) and latching current (IL)

H

versus junction temperature

I ,I [T ]/I , I [T = 25 °C]

H L j H L j

2.5

2.0

1.5

1.0

0.5

0.0

-50 -25 0 25 50 75 100 125

Typical values

I

L

I

H

Tj(°C)

1.5

VGTQ1-Q2-Q3

1.0

0.5

0.0

-50

-25 0 25 50 75 100 125

Tj(°C)

Figure 11. Relative variation of critical rate of

decrease of main current (di/dt)c versus (dV/dt)c

(di/dt)c[(dV/dt)c] / Specified(di/dt)c

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1 10 100

ACST12-7Cxx

ACST12-7Sxx

(dV/dt)c (V/µs)

4/13 Doc ID 15238 Rev 4