ST ACST10 User Manual

ACST10

Overvoltage protected AC switch

Features

■ Triac with overvoltage crowbar technology

■ Low I

(I

■ High noise immunity: static dV/dt > 2000 V/µs

■ TO-220FPAB insulated package: 1500 V rms

(< 10 mA) or high immunity

GT

< 35 mA) version

GT

Benefits

■ Enables equipment to meet IEC 61000-4-5

■ High off-state reliability with planar technology

■ Need no external over voltage protection

■ Reduces the power passive component count

■ High immunity against fast transients

described in IEC 61000-4-4 standards

Applications

■ AC mains static switching in appliance and

industrial control systems

■ Drive of medium power AC loads such as:

– Universal motor of washing machine drum – Compressor for fridge or air conditioner

OUT

G

OUT

COM

TO-220AB ACST1010-7T ACST1035-7T

TO-220FPAB ACST1010-7FP ACST1035-7FP

Figure 1. Functional diagram

OUT

G

COM

Table 1. Device summary

COM

G

OUT

Description

The ACST10 series belongs to the ACS™/ACST power switch family built with A.S.D. specific discrete) technology. This high performance device is suited to home appliances

®

(application

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT

10 A

700 V

10 or 35 mA

or industrial systems, and drives loads up to 10 A.

This ACST10 switch has a Triac structure and a high voltage clamping device to absorb the inductive turn-off energy and withstand transients such as those described in the IEC 61000-4-5 standard. The ACST1010-7 needs a low gate current to be activated (I shows a high noise immunity complying with IEC 61000-4-4 standard. The ACST1035-7 offers a

< 10 mA) and still

GT

TM: ACS is a trademark of STMicroelectronics

®: A.S.D. is a registered trademark of STMicroelectronics

high static dV/dt immunity of 2 kV/µs minimum.

July 2010 Doc ID 15237 Rev 3 1/13

www.st.com

13

Characteristics ACST10

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit

I

T(RMS)

I

TSM

dI/dt

V

P

G(AV)

P

I

T

V

INS(RMS)

1. According to test described in IEC 61000-4-5 standard and Figure 17

Table 3. Electrical characteristics

On-state rms current (full sine wave)

TO-220FPAB T

Non repetitive surge peak on-state current Tj initial = 25 °C, ( full cycle sine wave)

2

I

tI2t for fuse selection tp = 10 ms 66 A2s

Critical rate of rise on-state current

= 2 x I

I

G

Non repetitive line peak pulse voltage

PP

GT, (tr

≤ 100 ns)

F = 60 Hz t

F = 50 Hz t

F = 120 Hz T

(1)

Average gate power dissipation Tj = 125 °C 0.1 W

Peak gate power dissipation (tp = 20 µs) Tj = 125 °C 10 W

GM

Peak gate current (tp = 20 µs) Tj = 125 °C 1.6 A

GM

Storage temperature range -40 to +150 °C

stg

T

Operating junction temperature range -40 to +125 °C

j

Maximum lead solder temperature during 10 ms (at 3 mm from case) 260 °C

T

l

Insulation rms voltage T0-220FPAB 1500 V

TO-220AB T

= 105 °C

c

= 84 °C

c

= 16.7 ms 105 A

p

= 20 ms 100 A

p

= 125 °C 100 A/µs

j

10 A

Tj = 25 °C 2 kV

Symbol Test conditions Quadrant T

(1)

V

I

GT

V

GT

V

GD

(2)

I

H

I

L

dV/dt

(dI/dt)c

(2)

= 12 V, RL = 33 Ω I - II - III 25 °C MAX. 10 35 mA

OUT

V

= 12 V, RL = 33 Ω I - II - III 25 °C MAX. 1.0 V

OUT

V

= V

OUT

I

= 500 mA 25 °C MAX. 30 50 mA

OUT

I

= 1.2 x I

G

V

OUT

, RL = 3.3 Ω I - II - III 125 °C MIN. 0.2 V

DRM

GT

= 67 % V

I - II - III 25 °C MAX. 50 70 mA

, gate open 125 °C MIN. 200 2000 V/µs

DRM

(dV/dt)c = 15 V/µs

j

125 °C MIN.

Without snubber 12

V

1. Minimum IGT is guaranteed at 5% of IGT max

2. For both polarities of OUT pin referenced to COM pin

CL

I

= 0.1 mA, t

CL

= 1 ms 25 °C MIN. 850 V

p

2/13 Doc ID 15237 Rev 3

Val u e

Unit

ACST1010-7 ACST1035-7

4.4 A/ms

ACST10 Characteristics

Table 4. Static characteristics

Symbol Test conditions Value Unit

(1)

V

R

I I

TM

T0

d

DRM

RRM

I

= 14.1 A, t

OUT

(1)

Threshold voltage Tj = 125 °C MAX. 0.9 V

(1)

Dynamic resistance Tj = 125 °C MAX. 35 mΩ

= 500 µs Tj = 25 °C MAX. 1.5 V

p

Tj = 25 °C MAX. 20 µA

= V

V

OUT

DRM

/ V

RRM

= 125 °C MAX. 1.2 mA

T

j

1. For both polarities of OUT pin referenced to COM pin

Table 5. Thermal characteristics

Symbol Parameter Value Unit

TO-220AB 1.7 °C/W

R

th(j-c)

R

th(j-a)

Figure 2. Maximum power dissipation vs.

P(W)

12

11

10

9

8

7

6

5

4

3

2

1

0

012345678 910

Figure 4. On-state rms current vs. ambient

Junction to case (AC)

Junction to ambient

rms on-state current (full cycle)

I (A)

T(RMS)

temperature (free air convection full

TO-220FPAB 3.5 °C/W

TO-220AB TO-220FPAB

60 °C/W

Figure 3. On-state rms current vs. case

temperature (full cycle)

I (A)

T(RMS)

11

10

9

8

7

6

5

4

3

2

1

0

0 25 50 75 100 125

T (°C)

C

TO-220FPAB

TO-220AB

Figure 5. Relative variation of thermal

impedance vs. pulse duration

cycle)

I (A)

T(RMS)

3,0

2,5

2,0

1.0E+00

K=[Z /R ]

th th

TO-220AB

-220FPAB

TO

Z

th(j-c)

Z

th(j-a)

1,5

1,0

0,5

0,0

0 25 50 75 100 125

T

amb

(°C)

Doc ID 15237 Rev 3 3/13

1.0E-01

TO-220AB

TO-220FPAB

1.0E-02

1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03

tp(s)

Characteristics ACST10

)

Figure 6. On-state characteristics

(maximal values)

I (A)

TM

100

(A)

10

TM

I

Tjmax :

V

(V)

V

Tj=125 °C

1

012345

Tj=25 °C

TM

to

R

d

= 0.90 V

= 35 mΩ

Figure 8. Non repetitive surge peak on-state

current for a sinusoidal pulse and corresponding value of I²t

I (A), I t (A s)

TSM

10000

1000

22

dI/dt limitation: 100 A/µs

Tjinitial=25 °C

I

TSM

Figure 7. Non repetitive surge peak on-state

current vs. number of cycles (T

initial = 25 °C)

I(A

TSM

110

100

90

80

70

60

50

40

30

20

Repetitive

10

T

=105 °C

C

0

1 10 100

j

Non repetitive

initial=25 °C

T

j

t=20ms

One cycle

Number of cycles

Figure 9. Relative variation of gate triggering

current (I

) and gate triggering

GT

voltage vs. junction temperature

I ,V ,[T /I [T = 25 °C]

GT

3.0

2.5

2.0

jGT j

IQ3

GT

I Q1-Q2

GT

100

I²t

10

t (ms)

p

1

0.01 0.10 1.00 10.00

Figure 10. Relative variation of holding (IH)

and latching current (I

) vs.

L

junction temperature

I ,I [T ]/I ,I [T = 25 °C]

HL J HL

2.5

2.0

1.5

1.0

0.5

0.0

-50 -25 0 25 50 75 100 125

j

Typical values

I

L

I

T (°C)

J

H

1.5

V Q1-Q2-Q3

1.0

GT

0.5

T (°C)

0.0

-50 -25 0 25 50 75 100 125

j

Figure 11. Relative variation of critical rate of

decrease of main current (di/dt)c vs. (dV/dt)c

(di/dt)c [(dV/dt)c] / Specified (di/dt)c

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1 10 100

ACST10-7Cxx

ACST10-7Sxx

(dV/dt)c (V/µs)

4/13 Doc ID 15237 Rev 3