How it Works
ST
Loading...
ACST10
User Manual
13 pgs168.16 Kb0
Table of contents
Loading...

ST ACST10 User Manual

ACST10
Overvoltage protected AC switch
Features
■ Triac with overvoltage crowbar technology
■ Low I
(I
■ High noise immunity: static dV/dt > 2000 V/µs
■ TO-220FPAB insulated package: 1500 V rms
GT
< 35 mA) version
GT
Benefits
■ Enables equipment to meet IEC 61000-4-5
■ High off-state reliability with planar technology
■ Need no external over voltage protection
■ Reduces the power passive component count
■ High immunity against fast transients
described in IEC 61000-4-4 standards
Applications
■ AC mains static switching in appliance and
industrial control systems
■ Drive of medium power AC loads such as:
– Universal motor of washing machine drum – Compressor for fridge or air conditioner
OUT
G
OUT
COM
TO-220AB ACST1010-7T ACST1035-7T
TO-220FPAB ACST1010-7FP ACST1035-7FP

Figure 1. Functional diagram

OUT
G
COM

Table 1. Device summary

COM
G
OUT
Description
The ACST10 series belongs to the ACS™/ACST power switch family built with A.S.D. specific discrete) technology. This high performance device is suited to home appliances
®
(application
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT
10 A
700 V
10 or 35 mA
or industrial systems, and drives loads up to 10 A.
This ACST10 switch has a Triac structure and a high voltage clamping device to absorb the inductive turn-off energy and withstand transients such as those described in the IEC 61000-4-5 standard. The ACST1010-7 needs a low gate current to be activated (I shows a high noise immunity complying with IEC 61000-4-4 standard. The ACST1035-7 offers a
< 10 mA) and still
GT
TM: ACS is a trademark of STMicroelectronics
®: A.S.D. is a registered trademark of STMicroelectronics
high static dV/dt immunity of 2 kV/µs minimum.
July 2010 Doc ID 15237 Rev 3 1/13
www.st.com
13
Characteristics ACST10

1 Characteristics

Table 2. Absolute ratings (limiting values)

Symbol Parameter Value Unit
I
T(RMS)
I
TSM
dI/dt
V
P
G(AV)
P
I
T
V
INS(RMS)
1. According to test described in IEC 61000-4-5 standard and Figure 17

Table 3. Electrical characteristics

On-state rms current (full sine wave)
TO-220FPAB T
Non repetitive surge peak on-state current Tj initial = 25 °C, ( full cycle sine wave)
2
I
tI2t for fuse selection tp = 10 ms 66 A2s
Critical rate of rise on-state current
= 2 x I
I
G
Non repetitive line peak pulse voltage
PP
GT, (tr
≤ 100 ns)
F = 60 Hz t
F = 50 Hz t
F = 120 Hz T
(1)
Average gate power dissipation Tj = 125 °C 0.1 W
Peak gate power dissipation (tp = 20 µs) Tj = 125 °C 10 W
GM
Peak gate current (tp = 20 µs) Tj = 125 °C 1.6 A
GM
Storage temperature range -40 to +150 °C
stg
T
Operating junction temperature range -40 to +125 °C
j
Maximum lead solder temperature during 10 ms (at 3 mm from case) 260 °C
T
l
Insulation rms voltage T0-220FPAB 1500 V
TO-220AB T
= 105 °C
c
= 84 °C
c
= 16.7 ms 105 A
p
= 20 ms 100 A
p
= 125 °C 100 A/µs
j
10 A
Tj = 25 °C 2 kV
Symbol Test conditions Quadrant T
(1)
V
I
GT
V
GT
V
GD
(2)
I
H
I
L
dV/dt
(dI/dt)c
(2)
(2)
= 12 V, RL = 33 Ω I - II - III 25 °C MAX. 10 35 mA
OUT
V
= 12 V, RL = 33 Ω I - II - III 25 °C MAX. 1.0 V
OUT
V
= V
OUT
I
= 500 mA 25 °C MAX. 30 50 mA
OUT
I
= 1.2 x I
G
V
OUT
, RL = 3.3 Ω I - II - III 125 °C MIN. 0.2 V
DRM
GT
= 67 % V
I - II - III 25 °C MAX. 50 70 mA
, gate open 125 °C MIN. 200 2000 V/µs
DRM
(dV/dt)c = 15 V/µs
j
125 °C MIN.
Without snubber 12
V
1. Minimum IGT is guaranteed at 5% of IGT max
2. For both polarities of OUT pin referenced to COM pin
CL
I
= 0.1 mA, t
CL
= 1 ms 25 °C MIN. 850 V
p
2/13 Doc ID 15237 Rev 3
Val u e
Unit
ACST1010-7 ACST1035-7
4.4 A/ms
ACST10 Characteristics

Table 4. Static characteristics

Symbol Test conditions Value Unit
(1)
V
V
R
I I
TM
T0
d
DRM
RRM
I
= 14.1 A, t
OUT
(1)
Threshold voltage Tj = 125 °C MAX. 0.9 V
(1)
Dynamic resistance Tj = 125 °C MAX. 35 mΩ
= 500 µs Tj = 25 °C MAX. 1.5 V
p
Tj = 25 °C MAX. 20 µA
= V
V
OUT
DRM
/ V
RRM
= 125 °C MAX. 1.2 mA
T
j
1. For both polarities of OUT pin referenced to COM pin

Table 5. Thermal characteristics

Symbol Parameter Value Unit
TO-220AB 1.7 °C/W
R
th(j-c)
R
th(j-a)
Figure 2. Maximum power dissipation vs.
P(W)
12
11
10
9
8
7
6
5
4
3
2
1
0
012345678 910
Figure 4. On-state rms current vs. ambient
Junction to case (AC)
Junction to ambient
rms on-state current (full cycle)
I (A)
T(RMS)
temperature (free air convection full
TO-220FPAB 3.5 °C/W
TO-220AB TO-220FPAB
60 °C/W
Figure 3. On-state rms current vs. case
temperature (full cycle)
I (A)
T(RMS)
11
10
9
8
7
6
5
4
3
2
1
0
0 25 50 75 100 125
T (°C)
C
TO-220FPAB
TO-220AB
Figure 5. Relative variation of thermal
impedance vs. pulse duration
cycle)
I (A)
T(RMS)
3,0
2,5
2,0
1.0E+00
K=[Z /R ]
th th
TO-220AB
-220FPAB
TO
Z
th(j-c)
Z
th(j-a)
1,5
1,0
0,5
0,0
0 25 50 75 100 125
T
amb
(°C)
Doc ID 15237 Rev 3 3/13
1.0E-01
TO-220AB
TO-220FPAB
1.0E-02
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
tp(s)
Characteristics ACST10
)
Figure 6. On-state characteristics
(maximal values)
I (A)
TM
100
(A)
10
TM
I
Tjmax :
V
(V)
V
Tj=125 °C
1
012345
Tj=25 °C
TM
to
R
d
= 0.90 V
= 35 mΩ
Figure 8. Non repetitive surge peak on-state
current for a sinusoidal pulse and corresponding value of I²t
I (A), I t (A s)
TSM
10000
1000
22
dI/dt limitation: 100 A/µs
Tjinitial=25 °C
I
TSM
Figure 7. Non repetitive surge peak on-state
current vs. number of cycles (T
initial = 25 °C)
I(A
TSM
110
100
90
80
70
60
50
40
30
20
Repetitive
10
T
=105 °C
C
0
1 10 100
j
Non repetitive
initial=25 °C
T
j
t=20ms
One cycle
Number of cycles
Figure 9. Relative variation of gate triggering
current (I
) and gate triggering
GT
voltage vs. junction temperature
I ,V ,[T /I [T = 25 °C]
GT
GT
3.0
2.5
2.0
jGT j
IQ3
GT
I Q1-Q2
GT
100
I²t
10
t (ms)
p
1
0.01 0.10 1.00 10.00
Figure 10. Relative variation of holding (IH)
and latching current (I
) vs.
L
junction temperature
I ,I [T ]/I ,I [T = 25 °C]
HL J HL
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125
j
Typical values
I
L
I
T (°C)
J
H
1.5
V Q1-Q2-Q3
1.0
GT
0.5
T (°C)
0.0
-50 -25 0 25 50 75 100 125
j
Figure 11. Relative variation of critical rate of
decrease of main current (di/dt)c vs. (dV/dt)c
(di/dt)c [(dV/dt)c] / Specified (di/dt)c
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.1 1 10 100
ACST10-7Cxx
ACST10-7Sxx
(dV/dt)c (V/µs)
4/13 Doc ID 15237 Rev 3
Loading...
+ 9 hidden pages
Buy Points How it Works FAQ Contact Us Questions and Suggestions Privacy Policy Cookie Policy Terms of Use