ST ACS108-6S User Manual

Overvoltage protected AC switch (ACS™)

Features

■ Needs no external protection snubber or

varistor

■ Enables equipment to meet IEC 61000-4-5

■ Reduces component count by up to 80%

■ Interfaces directly with the micro-controller

■ Common package tab connection supports

connection of several alternating current
switches (ACS) on the same cooling pad

■ Integrated structure based on A.S.D.

technology

■ Overvoltage protection by crowbar technology

■ High noise immunity - static dV/dt > 500 V/µs

®

ACS108-6S

Datasheet − production data

COM

OUT

G

SMBflat-3L

ACS108-6SUF

Applications

■ Alternating current on/off static switching in

appliances and industrial control systems

■ Drive of low power high inductive or resistive

loads like:
– relay, valve, solenoid,
– dispenser, door lock
– pump, fan, low power motor

Description

The ACS108-6S belongs to the AC line switch
family. This high performance switch can control a
load of up to 0.8 A.

The ACS108-6S switch includes an overvoltage
crowbar structure to absorb the overvoltage
energy, and a gate level shifter driver to separate
the digital controller from the main switch. It is
triggered with a negative gate current flowing out
of the gate pin.

Figure 1. Functional diagram

OUT

G

COM Common drive reference to connect

OUT Output to connect to the load.
G Gate input to connect to the controller

Table 1. Device summary

to the mains

through gate resistor

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT

COM

0.8 A

600 V

10 mA

®: A.S.D. is a registered trademark of STMicroelectonics

TM: ACS is a trademark of STMicroelectronics

June 2012 Doc ID 11962 Rev 4 1/12

This is information on a product in full production.

www.st.com

12

Characteristics ACS108-6S

1 Characteristics

Table 2. Absolute maximum ratings (T

Symbol Parameter Value Unit

I

T(RMS)

I

dI/dt

V

V

P

T

1. according to test described by IEC 61000-4-5 standard and Figure 19

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

On-state rms current (full sine wave)

Non repetitive surge peak on-state
current

TSM

(full cycle sine wave, T

2

t I²t Value for fusing tp = 10 ms 0.38 A2s

I

initial = 25 °C)

j

Critical rate of rise of on-state current

= 2xIGT, tr ≤ 100 ns

I

G

Non repetitive line peak mains voltage

PP

I

Peak gate current tp = 20 µs Tj = 125 °C 1 A

GM

Peak positive gate voltage Tj = 125 °C 10 V

GM

Average gate power dissipation Tj = 125 °C 0.1 W

G(AV)

Storage junction temperature range

stg

T

Operating junction temperature range

j

= 25 °C, unless otherwise specified)

amb

T

= 62 °C 0.45 A

amb

T

= 113 °C 0.8 A

tab

F = 60 Hz t = 16.7 ms 7.6

F = 50 Hz t = 20 ms 7.3

F = 120 Hz T

(1)

= 125 °C 100 A/µs

j

Tj = 25 °C 2 kV

-40 to +150

-30 to +125

A

°C

Symbol Test conditions Quadrant Value Unit

(1)

I

GT

V

V

IH

I

dV/dt

(dI/dt)c

V

1. Minimum IGT is guaranteed at 10% of IGT max

2. For both polarities of OUT referenced to COM

V

= 12 V, RL = 33 Ω

GT

GD

(2)

L

)

CLICL

OUT

V

(2)

(2)

(2

= V

OUT

I

= 100 mA Max. 25

OUT

IG = 1.2 x I

V

= 67% V

OUT

, RL =3.3 kΩ, Tj = 125 °C II - III Min. 0.15

DRM

GT

gate open, Tj = 125 °C Min. 500

DRM,

Without snubber (15 V/µs), turn-off time ≤ 20 ms, Tj = 125 °C Min. 0.3

= 0.1 mA, tp = 1 ms, Tj = 125 °C Min. 650

II - III Max. 10

II - III Max. 1

Max. 30

mA
V
V
mA
mA
V/µs
A/ms

V

2/12 Doc ID 11962 Rev 4

ACS108-6S Characteristics

Table 4. Static electrical characteristics

Symbol Test conditions Value Unit

(1)

V

I

TM

(1)

V

TO

(1)

R

D

I

DRM

I

RRM

1. For both polarities of OUT referenced to COM

Table 5. Thermal resistance

Symbol Parameter Value Unit

= 1.1 A, tp = 500 µs Tj = 25 °C Max. 1.3 V

TM

Threshold voltage Tj = 125 °C Max. 0.90 V

Tj = 125 °C Max. 300 mΩ

V

OUT

= 600 V

Tj = 25 °C

Max.

= 125 °C 0.2 mA

T

j

2µA

R

R

th (j-t)

th (j-a)

Junction to tab (AC) Max. 14 °C/W

Junction to ambient S = 5 cm² Max. 75

Doc ID 11962 Rev 4 3/12

Characteristics ACS108-6S

Figure 2. Maximum power dissipation

versus on-state rms current

Figure 3. On-state rms current versus tab

temperature (full cycle)

(full cycle)

P(W)

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8

180°

I (A)

T(RMS)

Figure 4. On-state rms current versus

ambient temperature
(free air convection)

I (A)

T(RMS)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0
0 25 50 75 100 125

T (°C)

a

I (A)

T(RMS)

1.00

0.90

0.80

0.70

0.60

0.50

0.40

0.30

0.20

0.10

0.00
0 25 50 75 100 125

T (°C)

C

Figure 5. Relative variation of thermal

impedance junction to ambient
versus pulse duration

K = [Z /R ]

1.E+00

1.E-01

1.E-02

th(j-a) th(j-a)

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

t (s)

p

Figure 6. Relative variation of, holding and

Figure 7. Releative variation of IGT and VGT
latching current versus junction
temperature

I , V [T ] / I , V [T = 25 °C]

GT GT j GT GT j

I , [T] / I , I [T = 25 °C]

I

HjHLj

L

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130

I

H

I

L

T (°C)

j

4/12 Doc ID 11962 Rev 4

2.8

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130

versus junction temperature

I

GT

V

GT

T (°C)

j