ST ACS108 User Manual
Overvoltage protected AC switch (ACS™)
COM
OUT
COM
G
COM
OUT
G
SOT-223
ACS108-6SN
ACS108-8SN
TO-92
ACS108-6SA
ACS108-8SA
OUT
COM
G
COM Common drive reference to connect
to the mains
OUT Output to connect to the load.
G Gate input to connect to the controller
through gate resistor
Features
■ Enables equipment to meet IEC 61000-4-5
surge with overvoltage crowbar technology
■ High noise immunity against static dV/dt and
IEC 61000-4-4 burst
■ Needs no external protection snubber or
varistor
■ Reduces component count by up to 80% and
Interfaces directly with the micro-controller
■ Common package tab connection supports
connection of several alternating current
switches on the same cooling pad
■ V
gives headroom before clamping then
CL
crowbar action
ACS108
Datasheet production data
Applications
■ Alternating current on/off static switching in
Figure 1. Functional diagram
appliances and industrial control systems
■ Driving low power high inductive or resistive
loads like:
– relay, valve, solenoid, dispenser,
– pump, fan, low power motor, door lock
–lamp
Description
The ACS108 belongs to the AC switch range (built
with A. S. D.
switch can control a load of up to 0.8 A. The
ACS108 switch includes an overvoltage crowbar
structure to absorb the inductive turn-off energy,
and a gate level shifter driver to separate the
digital controller from the main switch. It is
triggered with a negative gate current flowing out
of the gate pin.
July 2012 Doc ID 6518 Rev 3 1/13
This is information on a product in full production.
®
technology). This high performance
Table 1. Device summary
Symbol Value Unit
I
T(RMS)
, V
V
DRM
RRM
I
GT
®: A.S.D. is a registered trademark of STMicroelectronics
TM: ACS is a trademark of STMicroelectronics
0.8 A
600 and 800 V
10 mA
www.st.com
13
Characteristics ACS108
1 Characteristics
Table 2. Absolute maximum ratings (T
= 25 °C, unless otherwise specified)
amb
Symbol Parameter Value Unit
T
= 64 °C 0.45 A
TO-92
I
T(RMS)
On-state rms current (full sine wave)
SOT-223
S = 5 cm
I
TSM
dI/dt
V
I
V
P
G(AV)
T
1. According to test described by IEC 61000-4-5 standard and Figure 18
Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Non repetitive surge peak on-state current
(full cycle sine wave, Tj initial = 25 °C)
2
t I²t Value for fusing tp = 10 ms 1.1 A2s
I
Critical rate of rise of on-state current
I
= 2xIGT, tr 100 ns
G
Non repetitive mains peak mains voltage
PP
Peak gate current tp = 20 µs Tj = 125 °C 1 A
GM
Peak positive gate voltage Tj = 125 °C 10 V
GM
(1)
Average gate power dissipation Tj = 125 °C 0.1 W
Storage junction temperature range
stg
T
Operating junction temperature range
j
F = 60 Hz t = 16.7 ms 13.7
F = 50 Hz t = 20 ms 13
F = 120 Hz T
amb
T
= 76 °C
lead
T
= 76 °C
amb
2
= 104 °C
T
tab
= 125 °C 100 A/µs
j
-40 to +150
-30 to +125
0.8 A
2kV
A
°C
Symbol Test conditions Quadrant Value Unit
(1)
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
OUT
V
OUT
I
= 100 mA Max. 10 mA
OUT
IG = 1.2 x I
V
OUT
V
OUT
= 12 V, RL = 33
= V
, RL = 3.3 kTj = 125 °C II - III Min. 0.15 V
DRM
GT
= 402 V, gate open, Tj = 125 °C Min. 2000 V/µs
= 536 V, gate open, Tj = 125 °C Min. 400 V/µs
(dI/dt)c Without snubber (15 V/µs), T
= 125 °C, turn-off time 20 ms Min. 2 A/ms
j
II - III Max. 10 mA
II - III Max. 1 V
Max. 25 mA
ICL = 0.1 mA, tp = 1 ms, ACS108-6 Min. 650 V
V
CL
1. Minimum IGT is guaranteed at 10% of IGT max
= 0.1 mA, tp = 1 ms, ACS108-8 Min. 850 V
I
CL
2/13 Doc ID 6518 Rev 3
ACS108 Characteristics
P (W)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
α = 180°
I (A)
T(RMS)
180°
I (A)
T(RMS)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0 25 50 75 100 125
α =180°
SOT-223
T°C
C
Table 4. Static electrical characteristics
Symbol Parameter and test conditions Value Unit
(1)
V
I
TM
V
R
I
DRM
I
RRM
(1)
t0
(1)
D
= 1.1 A, tp = 500 µs Tj = 25 °C Max. 1.3 V
TM
Threshold voltage Tj = 125 °C Max. 0.85 V
Dynamic resistance T
V
OUT
= V
DRM
= V
RRM
= 125 °C Max. 300 m
j
Tj = 25 °C
2µA
Max.
= 125 °C 0.2 mA
T
j
1. For both polarities of OUT referenced to COM
Table 5. Thermal resistance
Symbol Parameter Value Unit
R
R
th (j-l)
th (j-t)
Junction to lead (AC) TO-92 Max. 60
Junction to tab (AC) SOT-223 Max. 25
°C/W
TO-92 Max. 150
R
th (j-a)
Figure 2. Maximum power dissipation versus
Junction to ambient
on-state rms current
S = 5 cm² SOT-223 Max. 60
Figure 3. On-state rms current versus case
temperature (SOT223)
Doc ID 6518 Rev 3 3/13
Characteristics ACS108
I (A)
T(RMS)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0 25 50 75 100 125
Single layer Printed
circuit board FR4
Natural convection
TO-9 2
SOT-223
α =180°
T°C
C
K=[Z
th(j-a)/Rth(j-a)
]
0.01
0.10
1.00
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
Z
th(j-a)
SOT-223
Copper surface
area = 5cm²
TO-9 2
SOT-223
t (s)
P
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-50 -25 0 25 50 75 100 125
IH,IL[Tj]/IH,IL[Tj=25 °C]
I
H
I
L
Tj(°C)
IGT,VGT[Tj]/IGT,VGT,[Tj=25 °C]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50 -25 0 25 50 75 100 125
IGTQ2
VGTQ2-Q3
IGTQ3
Tj(°C)
I
TSM
(A)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
1 10 100 1000
Non repetitive
T
j
initial=25 °C
TO- 92
Repetitive
T
lead
= 76
°
C
SOT-223
Repetitive
T
tab
= 104°C
One cycle
t=20ms
Number of cycles
I
TSM
(A), I²t (A²s)
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
0.01 0.10 1.00 10.00
I
TSM
I²t
Sinusoidal pulse,
tp< 10 ms
Tjinitial = 25 °C
(ms)t
p
Figure 4. On-state rms current versus
ambient temperature
(free air convection)
Figure 6. Relative variation of holding and
latching current versus junction
temperature
Figure 5. Relative variation of thermal
impedance junction to ambient
versus pulse duration
Figure 7. Relative variation of IGT and VGT
versus junction temperature
Figure 8. Surge peak on-state current versus
number of cycles
4/13 Doc ID 6518 Rev 3
Figure 9. Non repetitive surge peak on-state
current for a sinusoidal pulse, and
corresponding value of I²t
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