ST ACS102-6T User Manual

Transient protected AC switch (ACS™)

Features

■ Needs no external protection snubber or

varistor

■ Enables equipment to meet IEC 61000-4-5

■ Reduces component count by up to 80%

■ Interfaces directly with the microcontroller

■ Common package tab connection supports

connection of several alternating current
switches (ACS) on the same cooling pad

■ Integrated structure based on ASD technology

■ Overvoltage protection by crowbar technology

■ High noise immunity - static dV/dt > 300 V/µs

ACS102-6T

G (5)

COM (6)
COM (7)
NC (8)

SO-8

ACS102-6T1

Figure 1. Functional diagram

NC (4)

NC (3)

OUT (2)

NC (1)

ACS102-6TA

OUT

TO-92

OUT

COM

G

Applications

■ Alternating current on/off static switching in

appliances and industrial control systems

■ Drive of low-power, high-inductive or resistive

loads like:
– relay, valve, solenoid
– dispenser, door lock
– micro-motor

Description

The ACS102-6T belongs to the AC line switch
family. This high performance switch can control a
load of up to 0.2A.

The ACS102-6T switch includes an overvoltage
crowbar structure to absorb the overvoltage
energy, and a gate level shifter driver to separate
the digital controller from the main switch. It is
triggered with a negative gate current flowing out
of the gate pin.

G

COM

COM Common drive reference to connect

to the mains
OUT Output to connect to the load.
G Gate input to connect to the controller

through gate resistor

Table 1. Device summary

Symbol Value Unit

I

T(RMS)

V

DRM/VRRM

I

GT

0.2 A

600 V

5mA

TM: ACS is a trademark of STMicroelectronics

ASD: Application specific devices

May 2011 Doc ID 11961 Rev 3 1/11

www.st.com

11

Characteristics ACS102-6T

1 Characteristics

Table 2. Absolute maximum ratings (T

= 25 °C, unless otherwise specified)

amb

Symbol Parameter Value Unit

I

T(RMS)

I

On-state rms current (full sine wave)

Non repetitive surge peak on-state current

TSM

(full cycle sine wave, Tj initial = 25 °C)

SO-08 T

f = 60 Hz t = 16.7 ms 7.6

f = 50 Hz t = 20 ms 7.3

I²t I²t Value for fusing t

TO-92 T

dI/dt

V

V

P

T

1. According to test described by IEC 61000-4-5 standard and Figure 17

Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified)

Critical rate of rise of on-state current
I

= 2xIGT, tr ≤ 100 ns

G

Non repetitive line peak mains voltage

PP

I

Peak gate current tp = 20 µs Tj = 125 °C 1 A

GM

Peak positive gate voltage Tj = 125 °C 10 V

GM

Average gate power dissipation Tj = 125 °C 0.1 W

G(AV)

Storage junction temperature range

stg

T

Operating junction temperature range

j

(1)

f = 120 Hz T

= 100 °C

amb

= 100 °C

amb

= 10 ms 0.38 A²s

p

= 125 °C 50 A/µs

j

0.2 A

Tj = 25 °C 2 kV

-40 to +150

-30 to +125

A

°C

Symbol Test conditions Quadrant Value Unit

(1)

I

GT

V

GT

V

GD

(2)

I

H

(2)

I

L

dV/dt

(dI/dt)c

V

CL

1. Minimum IGT is guaranteed at 10% of IGT max

2. For both polarities of OUT referenced to COM

V

= 12 V, RL = 33 Ω

OUT

V

= V

OUT

I

= 100 mA MAX 20 mA

OUT

IG = 1.2 x I

(2)

V

= 67% V

OUT

(2)

Without snubber (15 V/µs), turn-off time ≤ 20 ms, Tj = 125 °C MIN 0.15 A/ms

, RL =3.3 kΩ, Tj = 125 °C II - III MIN 0.15 V

DRM

GT

gate open, Tj = 125 °C MIN 300 V/µs

DRM,

ICL = 0.1 mA, tp = 1 ms, Tj = 125 °C MIN 650 V

II - III MAX 5 mA

II - III MAX 0.9 V

MAX 25 mA

2/11 Doc ID 11961 Rev 3

ACS102-6T Characteristics

Table 4. Static electrical characteristics

Symbol Test conditions Value Unit

(1)

V

V

TM

TO

R

I

DRM

I

RRM

(1)

D

(1)

I

= 0.3 A, tp = 380 µs Tj = 25 °C MAX 1.2 V

TM

Tj = 125 °C MAX 0.80 V

Tj = 125 °C MAX 500 mΩ

V

OUT

= 600 V

Tj = 25 °C

MAX

Tj = 125 °C 0.2 mA

2µA

1. for both polarities of OUT referenced to COM

Table 5. Thermal resistance

Symbol Parameter Value Unit

R

th (j-l)

Junction to lead (AC) TO-92 60

TO-92 150

R

th (j-a)

Figure 2. Maximum power dissipation

Junction to ambient

versus on-state rms current

S = 40 mm² SO-8 150

Figure 3. On-state rms current versus

ambient temperature (full cycle)

(full cycle)

P (W)

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0.00

α=180°

180°

I (A)

T(RMS)

0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20

I (A)

T(RMS)

0.22

0.20

0.18

0.16

0.14

0.12

0.10

0.08

0.06

0.04

0.02

0.00

0 25 50 75 100 125

a=180°

Printed circuit board FR4

Natural convection

T°C

amb

°C/W

Doc ID 11961 Rev 3 3/11

Characteristics ACS102-6T

(

)

Figure 4. Relative variation of junction to

ambient thermal impedance versus
pulse duration and package

K=[Z

1.E+00

1.E-01

1.E-02

1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

th(j-a)/Rth(j-a)

TO-9 2

]

SO-8

t (S)

P

Figure 6. Non repetitive surge peak on-state

current versus number of cycles

I

(A)

TSM

10

9

8

7

6

Non repetitive
Tj initial=25°C

5

4

3

Repetitive

T

=100°C

amb

2

1

0

1 10 100 1000

t=20ms

One cycle

Number of cycles

Figure 5. Relative variation of gate trigger,

holding and latching current versus
junction temperature

I

,I

,I

[T

]/I

,I

,I

[T

GT

H

L

IL& I

j

H

2.5

2.0

1.5

1.0

0.5

0.0

-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130

=25°C]

GT

H

L

j

I

GT

Tj(°C)

Figure 7. Non repetitive surge peak on-state

current for a sinusoidal pulse, and
corresponding value of I²t

(A), I²t (A²s)

I

TSM

1.E+03

1.E+02

1.E+01

1.E+00

(ms)t

1.E-01

p

0.01 0.10 1.00 10.00

Tjinitial=25 °C
Pulse width tp< 10 ms

I

TSM

I²t

Figure 8. On-state characteristics

(maximal values)

Figure 9. SO-8 junction to ambient thermal

resistance versus copper surface
under tab

R

I

A

TM

10.00

Tjmax.:
V

= 0.8 V

to

R

= 500 mΩ

d

1.00

Tj=125°C

Tj=25°C

0.10

0.01

VTM(V)

160

140

120

100

80

60

40

20

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

4/11 Doc ID 11961 Rev 3

(°C/W)

th(j-a)

PCB FR4, copper thickness 35 µm

SCU(mm²)

0

0 50 100 150 200 250 300

SO-8