The A5972D is a step down monolithic power
switching regulator with a minimum switch current
limit of 1.8 A so it is able to deliver up to 1.5 A DC
current to the load depending on the application
conditions. The output voltage can be set from
1.235 V to V
The device uses an internal p-channel DMOS
transistor (with a typical R
switching element to minimize the size of the
external components.
An internal oscillator fixes the switching frequency
at 250 kHz. Having a minimum input voltage of
4 V only it fits the automotive applications
requiring the device operation even in cold crank
conditions. Pulse by pulse current limit with the
internal frequency modulation offers an effective
constant current short circuit protection.
Feedback input. Connecting directly to this pin results in an output
5FB
8VCCUnregulated DC input voltage.
voltage of 1.23 V. An external resistive divider is required for higher
output voltages.
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A5972DElectrical data
2 Electrical data
2.1 Maximum ratings
Table 2.Absolute maximum ratings
SymbolParameterValueUnit
V
8
V
1
I
1
V
, V
4
P
TOT
T
J
T
STG
Input voltage40V
OUT pin DC voltage
OUT pin peak voltage at Δt = 0.1 μs
Maximum output currentint. limit.
Analog pins4V
5
Power dissipation at T
Operating junction temperature range-40 to 150°C
Storage temperature range-55 to 150°C
2.2 Thermal data
Table 3.Thermal data
SymbolParameterValueUnit
R
thJA
1. Package mounted on evaluation board
Maximum thermal resistance junction-ambient65
-1 to 40
-5 to 40
≤ 70 °C1.2W
A
(1)
V
V
°C/W
Doc ID 13956 Rev 55/37
Electrical characteristicsA5972D
3 Electrical characteristics
TJ = -40 °C to 125 °C, VCC = 12 V, unless otherwise specified.
Table 4.Electrical characteristics
SymbolParameterTest conditionMinTypMaxUnit
V
R
DS(on)
f
CC
I
SW
Operating input
voltage range
Mosfet on resistance0.2500.5Ω
Maximum limiting
L
current
(1)
V
CC
V
CC
Switching frequency212250280kHz
Duty cycle0100%
Dynamic characteristics (see test circuit)
V
ηEfficiencyV
Voltage feedback4.4 V < V
5
= 5 V, V
0
DC characteristics
I
qop
I
Total operating
quiescent current
Quiescent currentDuty cycle = 0; VFB= 1.5 V2.5mA
q
Error amplifier
V
OH
V
High level output
voltage
Low level output
OL
voltage
V
FB
V
FB
436V
= 5 V1.82.53
= 5 V, TJ = 25 °C22.53
< 36 V, 1.1981.2351.272V
CC
= 12 V90%
CC
35mA
= 1 V3.5V
= 1.5 V0.4V
A
V
= 1.9 V;
I
o source
I
o sink
I
Source output current
Sink output current
bSource bias current2.54μA
DC open loop gainR
gmTransconductance
1. With TJ = 85 °C, I
= 2 A, assured by design, characterization and statistical correlation.
lim_min
COMP
V
= 1 V
FB
V
= 1.9 V;
COMP
V
= 1.5 V
FB
L=5065dB
8
I
= -0.1 mA to 0.1 mA;
COMP
V
= 1.9 V
COMP
6/37Doc ID 13956 Rev 5
190300μA
11.5mA
2.3mS
A5972DDatasheet parameters over the temperature range
4 Datasheet parameters over the temperature range
The 100% of the population in the production flow is tested at three different ambient
temperatures (-40 °C; +25 °C, +125 °C) to guarantee the datasheet parameters inside the
junction temperature range (-40 °C; +125 °C).
The device operation is so guaranteed when the junction temperature is inside the (-40 °C;
+150 °C) temperature range. The designer can estimate the silicon temperature increase
respect to the ambient temperature evaluating the internal power losses generated during
the device operation (please refer to the Chapter 2.2).
However the embedded thermal protection disables the switching activity to protect the
device in case the junction temperature reaches the T
temperature.
All the datasheet parameters can be guaranteed to a maximum junction temperature of
+125 °C to avoid triggering the thermal shutdown protection during the testing phase
because of self heating.
SHTDWN
(+150 °C±10 °C)
Doc ID 13956 Rev 57/37
Functional descriptionA5972D
5 Functional description
The main internal blocks are shown in the device block diagram in Figure 3. They are:
●A voltage monitor circuit which checks the input and the internal voltages.
●A fully integrated sawtooth oscillator with a frequency of 250 kHz ± 15%, including also
the voltage feed forward function and an input/output synchronization pin.
●Two embedded current limitation circuits which control the current that flows through
the power switch. The pulse-by-pulse current limit forces the power switch OFF cycle
by cycle if the current reaches an internal threshold, while the frequency shifter reduces
the switching frequency in order to significantly reduce the duty cycle.
●A transconductance error amplifier.
●A pulse width modulator (PWM) comparator and the relative logic circuitry necessary to
drive the internal power.
●A high side driver for the internal P-MOS switch.
●A circuit to implement the thermal protection function.
Figure 3.Block diagram
5.1 Power supply
The internal regulator circuit (shown in Figure 4) consists of a start-up circuit, an internal
voltage pre-regulator, the Bandgap voltage reference and the Bias block that provides
current to all the blocks. The Starter supplies the start-up currents to the entire device when
the input voltage goes high and the device is enabled (inhibit pin connected to ground). The
pre-regulator block supplies the Bandgap cell with a pre-regulated voltage V
very low supply voltage noise sensitivity.
8/37Doc ID 13956 Rev 5
that has a
REG
A5972DFunctional description
5.2 Voltages monitor
An internal block continuously senses the Vcc, V
their thresholds, the regulator begins operating. There is also a hysteresis on the V
(UVLO).
Figure 4.Internal circuit
5.3 Current protection
The A5972D features two types of current limit protection: pulse-by-pulse and frequency
foldback.
The schematic of the current limitation circuitry for the pulse-by-pulse protection is shown in
Figure 5. The output power PDMOS transistor is split into two parallel PDMOS transistors.
The smallest one includes a resistor in series, R
R
switched off until the next falling edge of the internal clock pulse. Due to this reduction of the
ON time, the output voltage decreases. Since the minimum switch ON time necessary to
sense the current in order to avoid a false overcurrent signal is too short to obtain a
sufficiently low duty cycle at 250 kHz (see Chapter 8.4), the output current in strong
overcurrent or short circuit conditions could be not properly limited. For this reason the
switching frequency is also reduced, thus keeping the inductor current under its maximum
threshold. The frequency shifter (Figure 5) functions based on the feedback voltage. As the
feedback voltage decreases (due to the reduced duty cycle), the switching frequency
decreases also.
and if it reaches the threshold, the mirror becomes unbalanced and the PDMOS is
SENSE
and Vbg. If the voltages go higher than
ref
CC
. The current is sensed through
SENSE
Doc ID 13956 Rev 59/37
Functional descriptionA5972D
Figure 5.Current limitation circuitry
5.4 Error amplifier
The voltage error amplifier is the core of the loop regulation. It is a transconductance
operational amplifier whose non inverting input is connected to the internal voltage
reference (1.235 V), while the inverting input (FB) is connected to the external divider or
directly to the output voltage. The output (COMP) is connected to the external compensation
network. The uncompensated error amplifier has the following characteristics:
The error amplifier output is compared to the oscillator sawtooth to perform PWM control.
5.5 PWM comparator and power stage
This block compares the oscillator sawtooth and the error amplifier output signals to
generate the PWM signal for the driving stage.
The power stage is a highly critical block, as it functions to guarantee a correct turn ON and
turn OFF of the PDMOS. The turn ON of the power element, or more accurately, the rise
time of the current at turn ON, is a very critical parameter. At a first approach, it appears that
the faster the rise time, the lower the turn ON losses.
However, there is a limit introduced by the recovery time of the recirculation diode.
In fact, when the current of the power element is equal to the inductor current, the diode
turns OFF and the drain of the power is able to go high. But during its recovery time, the
10/37Doc ID 13956 Rev 5
A5972DFunctional description
diode can be considered a high value capacitor and this produces a very high peak current,
responsible for numerous problems:
●Spikes on the device supply voltage that cause oscillations (and thus noise) due to the
board parasites.
●Turn ON overcurrent leads to a decrease in the efficiency and system reliability.
●Major EMI problems.
●Shorter freewheeling diode life.
The fall time of the current during turn OFF is also critical, as it produces voltage spikes (due
to the parasites elements of the board) that increase the voltage drop across the PDMOS.
In order to minimize these problems, a new driving circuit topology has been used and the
block diagram is shown in Figure 6. The basic idea is to change the current levels used to
turn the power switch ON and OFF, based on the PDMOS and the gate clamp status.
This circuitry allows the power switch to be turned OFF and ON quickly and addresses the
freewheeling diode recovery time problem. The gate clamp is necessary to ensure that V
of the internal switch does not go higher than V
max. The ON/OFF Control block protects
GS
GS
against any cross conduction between the supply line and ground.
Figure 6.Driving circuitry
5.6 Thermal shutdown
The shutdown block generates a signal that turns OFF the power stage if the temperature of
the chip goes higher than a fixed internal threshold (150±10 °C). The sensing element of the
chip is very close to the PDMOS area, ensuring fast and accurate temperature detection. A
hysteresis of approximately 20 °C keeps the device from turning ON and OFF continuously.
Doc ID 13956 Rev 511/37
Additional features and protectionA5972D
6 Additional features and protection
6.1 Feedback disconnection
If the feedback is disconnected, the duty cycle increases towards the maximum allowed
value, bringing the output voltage close to the input supply. This condition could destroy the
load.
To avoid this hazardous condition, the device is turned OFF if the feedback pin is left
floating.
6.2 Output overvoltage protection
Overvoltage protection, or OVP, is achieved by using an internal comparator connected to
the feedback, which turns OFF the power stage when the OVP threshold is reached. This
threshold is typically 30% higher than the feedback voltage.
When a voltage divider is required to adjust the output voltage (Figure 13), the OVP
intervention will be set at:
Equation 1
Where R
R
is between the feedback pin and ground.
2
is the resistor connected between the output voltage and the feedback pin, and
1
6.3 Zero load
Due to the fact that the internal power is a PDMOS, no boostrap capacitor is required and so
the device works properly even with no load at the output. In this case it works in burst
mode, with a random burst repetition rate.
V
OVP
R1R2+
--------------------
1.3
•V
•=
R
FB
2
12/37Doc ID 13956 Rev 5
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