74VHCU04
HEX INVERTER (SINGLE STAGE)
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
= 2 µA (MAX.) at TA=25°C
CC
■ HIGH NOISE IMMUNITY:
V
= V
NIH
■ POWER DOWN PROTECTION ON INPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
■ BALANCED PROPAGATION DELAYS:
t
PLH
■ OPERATING VOLTAGE RANGE:
V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
NIL
| = IOL = 8 mA (MIN)
≅ t
PHL
(OPR) = 2V to 5.5V
= 3.5 ns (TYP.) at VCC = 5V
PD
= 10% VCC (MIN.)
74 SERIES 04
■ IMPROVED LATCH-UP IMMUNITY
■ LOW NOISE: V
= 0.8V (MAX.)
OLP
DESCRIPTION
The 74VHCU04 is an advanced high-speed
CMOS HEX INVERTER fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
As the internal circuit is composed of a single
stage inverter, it can be used in analog
applica t ion s s uc h as c rys t al o s c illator.
TSSOPSOP
Table 1: Order Codes
PACKAGE T & R
SOP 74VHCU04MTR
TSSOP 74VHCU04TTR
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used t o interf ace 5V to 3V s ince al l
inputs are equipped with TTL threshold.
All inputs and outputs are equipped with
protection circuits against static disc harge, giving
them 2KV ESD immunity and transient excess
voltage.
Figure 1: Pin Connection And IEC Logic Symbols
Rev. 5
1/11November 2004
74VHCU04
Figure 2: Input Equivalent Circuit Table 2: Pin Description
PIN N° SYMBOL NAME AND FUNCTION
1, 3, 5, 9, 1 1,
13
2, 4, 6, 8, 10,
12
7 GND Ground (0V)
14
Table 3: Truth Table
Table 4: Absolute Maximum Ratings
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
or I
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
Table 5: Recommended Operating Conditions
1A to 6A Data Inputs
1Y to 6Y Data Outputs
V
CC
Positive Supply Voltage
AY
LH
HL
-0.5 to +7.0 V
-0.5 to +7.0 V
V
- 20 mA
± 20 mA
± 25 mA
± 50 mA
-65 to +150 °C
300 °C
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) VIN from 30 % t o 70% of V
Supply Voltage
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (see note 1) (V
(V
CC
= 3.3 ± 0 . 3 V )
CC
= 5.0 ± 0.5V)
CC
2.0 to 5.5 V
0 to 5.5 V
CC
-55 to 125 °C
0 to 10 0
0 to 20
2/11
V
ns/V
Table 6: DC Specifications
Symbol Parameter
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
V
High Level
OH
Output Voltage
Low Level Output
V
OL
Voltage
Input Leakage
I
I
Current
Quiescent Supply
I
CC
Current
V
CC
(V)
2.0 1.7 1.7 1.7
3.0 t o
5.5
2.0 0.3
3.0 t o
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
0 to
5.5
5.5
Test Condition Value
= 25°C
T
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
0.8
V
CC
0.8
V
CC
0.2
V
CC
IO=-50 µA
=-50 µA
I
O
=-50 µA
I
O
I
=-4 mA
O
I
=-8 mA
O
=50 µA
I
O
=50 µA
I
O
=50 µA
I
O
I
=4 mA
O
=8 mA
I
O
= 5.5V or GND
V
I
V
= VCC or GND
I
1.8 2.0 1.8 1.8
2.7 3.0 2.7 2.7
4.0 4.5 4.0 4.0
2.58 2.48 2.48
3.94 3.8 3.8
0.0 0.2 0.2 0.2
0.0 0.3 0.3 0.3
0.0 0.5 0.5 0.5
0.36 0.44 0.44
0.36 0.44 0.44
± 0.1 ± 1.0 ± 1.0 µA
22020µA
0.2
V
CC
0.8
V
CC
74VHCU04
Unit
V
0.2
V
V
CC
V
V
Table 7: AC Electrical Characteristics (Input t
= tf = 3ns)
r
Test Condition Value
= 25°C
Symbol Parameter
t
Propagation Delay
PLH
PHL
Time
0.5V
t
(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5.0V ±
V
(V)
CC
C
(pF)
L
3.3(*) 15 5.0 8.9 1.0 10.5 1.0 10.5
3.3(*) 50 7.5 11.4 1.0 13.0 1.0 13.0
5.0(**) 15 3.5 5.5 1.0 6.5 1.0 6.5
5.0(**) 50 5.0 7.0 1.0 8.0 1.0 8.0
T
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
Unit
ns
ns
Table 8: Capacitive Characteristics
Test Condition Value
T
Symbol Parameter
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
= 25°C
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
510 10 10pF
13 pF
= CPD x VCC x fIN + ICC/6 (per gate)
CC(opr)
Unit
3/11
74VHCU04
Table 9: Dynamic Switching Characteristics
Test Condition Value
= 25°C
Symbol Parameter
V
V
Dynamic Low
OLP
Voltage Quiet
OLV
Output (note 1, 2)
V
(V)
5.0
CC
T
A
Min. Typ. Max. Min. Max. Min. Max.
0.5 0.8
-0.8 -0.5
Dynamic High
V
IHD
Voltage Input
5.0 4.0
= 50 pF
C
L
(note 1, 3)
Dynamic Low
V
ILD
Voltage Input
5.0 0.8
(note 1, 3)
1) Worst case package.
2) Max number of outp ut s defined as (n). Data inpu t s are driven 0V to 5.0V, (n-1) outputs switc hi ng and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (V
(V
), f=1MHz.
IHD
Figure 3: Test Circuit
-40 to 85°C -55 to 125°C
ILD
Unit
V
), 0V to thresho l d
CL =15/50pF or equivalent (i ncludes jig an d probe capac i tance)
= Z
R
of pulse generator (typically 50Ω)
T
OUT
4/11
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