ST 74VHCU04 User Manual

74VHCU04

HEX INVERTER (SINGLE STAGE)

■HIGH SPEED: tPD = 3.5 ns (TYP.) at VCC = 5V

■LOW POWER DISSIPATION: ICC = 2 A (MAX.) at TA=25°C

■HIGH NOISE IMMUNITY: VNIH = VNIL = 10% VCC (MIN.)

■POWER DOWN PROTECTION ON INPUTS

■SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN)

■BALANCED PROPAGATION DELAYS: tPLH tPHL

■OPERATING VOLTAGE RANGE: VCC(OPR) = 2V to 5.5V

■PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 04

■IMPROVED LATCH-UP IMMUNITY

■LOW NOISE: VOLP = 0.8V (MAX.)

DESCRIPTION

The 74VHCU04 is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.

As the internal circuit is composed of a single stage inverter, it can be used in analog applications such as crystal oscillator.

SOP	TSSOP
Table 1: Order Codes
PACKAGE	T & R
SOP	74VHCU04MTR
TSSOP	74VHCU04TTR

Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V since all inputs are equipped with TTL threshold.

All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.

Figure 1: Pin Connection And IEC Logic Symbols

November 2004	Rev. 5
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74VHCU04

Figure 2: Input Equivalent Circuit		Table 2: Pin Description
		PIN N°	SYMBOL		NAME AND FUNCTION
		1, 3, 5, 9, 11,	1A to 6A	Data Inputs
		13
		2, 4, 6, 8, 10,	1Y to 6Y	Data Outputs
		12
		7	GND	Ground (0V)
		14	VCC	Positive Supply Voltage
		Table 3: Truth Table
		A			Y
		L			H
		H			L
Table 4: Absolute Maximum Ratings
Symbol	Parameter			Value		Unit
VCC	Supply Voltage		-0.5 to +7.0			V
VI	DC Input Voltage		-0.5 to +7.0			V
VO	DC Output Voltage		-0.5 to VCC + 0.5			V
IIK	DC Input Diode Current			- 20		mA
IOK	DC Output Diode Current			±	20	mA
IO	DC Output Current			±	25	mA
ICC or IGND	DC VCC or Ground Current			±	50	mA
Tstg	Storage Temperature		-65 to +150			°C
TL	Lead Temperature (10 sec)			300		°C

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied

Table 5: Recommended Operating Conditions

	Symbol	Parameter	Value	Unit
	VCC	Supply Voltage	2.0 to 5.5	V
	VI	Input Voltage	0 to 5.5	V
	VO	Output Voltage	0 to VCC	V
	Top	Operating Temperature	-55 to 125	°C
	dt/dv	InputRiseandFallTime(seenote1)(VCC=3.3± 0.3V)	0 to 100	ns/V
		(VCC = 5.0 ± 0.5V)	0 to 20

1) VIN from 30% to 70% of VCC

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Table 6: DC Specifications

						Test Condition												Value
Symbol		Parameter			VCC								TA = 25°C						-40 to 85°C					-55 to 125°C		Unit
					(V)						Min.			Typ.		Max.			Min.		Max.			Min.	Max.
VIH	High Level Input				2.0						1.7							1.7					1.7
	Voltage				3.0 to						0.8VCC							0.8VCC					0.8VCC			V
					5.5
VIL	Low Level Input				2.0												0.3
	Voltage				3.0 to												0.2					0.2			0.2	V
					5.5											VCC					VCC				VCC
VOH	High Level				2.0				IO=-50 A		1.8			2.0				1.8					1.8
	Output Voltage
					3.0				IO=-50 A		2.7			3.0				2.7					2.7
					4.5				IO=-50 A		4.0			4.5				4.0					4.0			V
					3.0				IO=-4 mA		2.58							2.48					2.48
					4.5				IO=-8 mA		3.94							3.8					3.8
VOL	Low Level Output				2.0				IO=50 A					0.0			0.2					0.2			0.2
	Voltage
					3.0				IO=50 A					0.0			0.3					0.3			0.3
					4.5				IO=50 A					0.0			0.5					0.5			0.5	V
					3.0				IO=4 mA							0.36				0.44					0.44
					4.5				IO=8 mA							0.36				0.44					0.44
II	Input Leakage				0 to			VI = 5.5V or GND								±	0.1			±		1.0			± 1.0	A
	Current				5.5
ICC	Quiescent Supply				5.5			VI = VCC or GND									2					20			20	A
	Current
Table 7: AC Electrical Characteristics (Input tr = tf = 3ns)
								Test Condition											Value
Symbol		Parameter				VCC			CL					TA = 25°C					-40 to 85°C					-55 to 125°C		Unit
						(V)			(pF)			Min.			Typ.		Max.		Min.		Max.			Min.	Max.
tPLH		Propagation Delay				3.3(*)			15						5.0		8.9		1.0			10.5		1.0	10.5	ns
tPHL		Time				3.3(*)			50						7.5		11.4		1.0			13.0		1.0	13.0
						5.0(**)			15						3.5		5.5		1.0			6.5		1.0	6.5	ns
						5.0(**)			50						5.0		7.0		1.0			8.0		1.0	8.0
(*) Voltage range is 3.3V ±			0.3V
(**) Voltage range is 5.0V ±			0.5V
Table 8: Capacitive Characteristics
								Test Condition											Value
Symbol		Parameter												TA = 25°C					-40 to 85°C					-55 to 125°C		Unit
												Min.			Typ.		Max.		Min.		Max.			Min.	Max.
CIN		Input Capacitance													5		10					10			10	pF
CPD		Power Dissipation													13											pF
		Capacitance
		(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/6 (per gate)

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74VHCU04

Table 9: Dynamic Switching Characteristics

Test Condition

Value

Symbol

Parameter

VCC

TA = 25°C

-40 to 85°C

-55 to 125°C

Unit

(V)

Min.

Typ.

Max.

Min.

Max.

Min.

Max.

VOLP

Dynamic Low

0.5

0.8

Voltage Quiet

5.0

VOLV

-0.8

-0.5

Output (note 1, 2)

VIHD

Dynamic High

CL = 50 pF

Voltage Input

5.0

4.0

V

(note 1, 3)

VILD

Dynamic Low

Voltage Input

5.0

0.8

(note 1, 3)

1)Worst case package.

2)Max number of outputs defined as (n). Data inputs are driven 0V to 5.0V, (n-1) outputs switching and one output at GND.

3)Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz.

Figure 3: Test Circuit

CL =15/50pF or equivalent (includes jig and probe capacitance)

RT = ZOUT of pulse generator (typically 50Ω )

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