ST 74VHCT32A User Manual

74VHCT32A

QUAD 2-INPUT OR GATE

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

= 2 µA (MAX.) at TA=25°C

CC

■ COMPA TIBLE WITH TTL OU TP U TS:

V

= 2V (MIN.), V

IH

■ POWER DOWN PROTECTION ON INPUTS

= 5 ns (TYP.) at VCC = 5V

PD

= 0.8V (MAX)

IL

& OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 8 mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANGE:

V

(OPR) = 4.5V to 5.5V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

74 SERIES 32

■ IMPROVED LATCH-UP IMMUNITY

■ LOW NOISE: V

= 0.8V (MAX.)

OLP

DESCRIPTION

The 74VHCT32A is an advanced high-speed
CMOS QUAD 2-INPUT OR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology.
The internal circuit is composed of 3 stages
including buffer ou tput, whi ch provid es hig h no ise
immunity and stable output.

TSSOPSOP

Table 1: Order Codes

PACKAGE T & R

SOP 74VHCT32AMTR

TSSOP 74VHCT32ATTR

Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used t o interf ace 5V to 3V s ince al l
inputs are equipped with TTL threshold.
All inputs and outputs are equipped with
protection circuits against static disc harge, giving
them 2KV ESD immunity and transient excess
voltage.

Figure 1: Pin Conne ction And IEC Logic Symbols

Rev. 4

1/11December 2004

74VHCT32A

Figure 2: Input Equivalent Circuit Table 2: Pin Description

PIN N° SYMBOL NAME AND FUNCTION

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10, 13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14

Table 3: Truth Table

ABY

LLL

LHH
HLH
HHH

Table 4: Absolute Maximum Ratings

Symbol Parameter Value Unit

V

V
V
V

I

I

OK

I

or I

I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

1) V

CC

2) High or Low State

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage (see note 1)

O

DC Output Voltage (see note 2) -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

= 0V

Table 5: Recommended Operating Conditions

V

CC

Positive Supply Voltage

-0.5 to +7.0 V

-0.5 to +7.0 V

-0.5 to +7.0 V

- 20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C
300 °C

V

Symbol Parameter Value Unit

V

V
V
V
T

dt/dv

1) V

CC

2) High or Low State

3) VIN from 0.8V to 2V

Supply Voltage

CC

Input Voltage

I

Output Voltage (see note 1)

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (see note 3) (V

= 0V

= 5.0 ± 0.5V)

CC

4.5 to 5.5 V
0 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 20 ns/V

2/11

V

Table 6: DC Specifications

Symbol Parameter

V

V

V

+I

I

High Level Input

IH

Voltage
Low Level Input

V

IL

Voltage
High Level Output

OH

Voltage
Low Level Output

OL

Voltage

I

Input Leakage

I

Current

I

Quiescent Supply

CC

Current
Additional Worst

CC

Case Supply
Current

Output Leakage

OPD

Current

Test Condition Value

= 25°C

T

V

CC

(V)

4.5 to

5.5

A

Min. Typ. Max. Min. Max. Min. Max.

222V

4.5 to

5.5

4.5

4.5

4.5

4.5

0 to

VI = 5.5V or GND

5.5
V

5.5

I

O

=-8 mA

I

O

=50 µA

I

O

=8 mA

I

O

= VCC or GND

I

4.4 4.5 4.4 4.4

3.94 3.8 3.7

0.0 0.1 0.1 0.1

=-50 µA

One Input at 3.4V,
other input at V

5.5

CC

or GND

= 5.5V

0

V

OUT

74VHCT32A

-40 to 85°C -55 to 125°C

0.8 0.8 0.8 V

0.36 0.44 0.55

± 0.1 ± 1.0 ± 1.0 µA

22020µA

1.35 1.5 1.5 mA

0.5 5.0 5.0 µA

Unit

V

V

Table 7: AC Electrical Characteristics (Input t

= tf = 3ns)

r

Test Condition Value

= 25°C

Symbol Parameter

t

Propagation Delay

PLH
PHL

Time

t

(*) Voltage range is 5.0V ± 0.5V

V

(*)

(V)

C

(pF)

L

CC

5.0 15 5.0 7.0 1.0 8.0 1.0 8.0

5.0 50 5.5 8.0 1.0 9.0 1.0 9.0

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit

ns

Table 8: Capacitive Characteristics

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance

410 10 10pF

18 pF

(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC/4 (per gate)

CC(opr)

Unit

3/11

74VHCT32A

Table 9: Dynamic Switching Characteristics

Test Condition Value

= 25°C

Symbol Parameter

V
V

Dynamic Low

OLP

Voltage Quiet

OLV

Output (note 1, 2)

V

CC

(V)

5.0

T

A

Min. Typ. Max. Min. Max. Min. Max.

0.3 0.8

-0.8 -0.3

Dynamic High

V

IHD

Voltage Input

5.0 2.0

= 50 pF

C

L

(note 1, 3)
Dynamic Low

V

ILD

Voltage Input

5.0 0.8

(note 1, 3)

1) Worst case package.

2) Max number of outp ut s defined as (n). Data inpu t s are driven 0V to 3.0V, (n-1) outputs switc hi ng and one output at GND.

3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.0V. Inputs under test switching: 3.0V to threshold (V
), f=1MHz.

(V

IHD

Figure 3: Test Cir cuit

-40 to 85°C -55 to 125°C

ILD

Unit

V

), 0V to thresho l d

CL =15/50pF or equivalent (i ncludes jig an d probe capac i tance)
R

= Z

of pulse generator (typically 50Ω)

T

OUT

4/11