74VHCT125A
QUAD BUS BUFFERS (3-STATE)
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
= 2 µA (MAX.) at TA=25°C
CC
■ COMPATIBLE WITH TTL OUTP U TS:
V
= 2V (M IN.), V
IH
■ POWER DOWN PROTECTION ON INPUTS
= 3.8 ns (TYP.) at VCC = 5V
PD
= 0.8V (MAX)
IL
& OUTPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 8 mA (MIN)
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ OPERATING VOLTAGE RANGE:
V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
PHL
(OPR) = 4.5V to 5.5V
74 SERIES 125
■ IMPROVED LATCH-UP IMMUNITY
■ LOW NOISE: V
= 0.8V (MAX.)
OLP
DESCRIPTION
The 74VHCT125A is an advanced high-speed
CMOS QUAD BUS BUFFERS fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The device requires the 3-STATE control input G
to be set high to pla ce the output in to the high
impedance state.
TSSOPSOP
Table 1: Order Codes
PACKAGE T & R
SOP 74VHCT125AMTR
TSSOP 74VHCT125ATTR
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
inputs with no regard to the supply voltage. This
device can be used t o interf ace 5V to 3V s ince al l
inputs are equipped with TTL threshold.
All inputs and outputs are equipped with
protection circuits against static disc harge, giving
them 2KV ESD immunity and transient excess
voltage.
Figure 1: Pin Connection And IEC Logic Symbols
Rev. 6
1/12December 2004
74VHCT125A
Figure 2: Input Equivalent Circuit Table 2: Pin Description
PIN N° SYMBOL NAME AND FUNCTION
1, 4, 10, 13 1G
2, 5, 9, 12 1A to 4A Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs
7 GND Ground (0V)
14
Table 3: Truth Table
to 4G Output Enable Inputs
V
CC
Positive Supply Voltage
AG
Y
XHZ
LLL
HLH
X : Don‘t Care
Z : High Impedance
Table 4: Absolute Maximum Ratings
Symbol Parameter Value Unit
V
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
1) Output in OFF State
2) High or Low State
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage (see note 1)
O
DC Output Voltage (see note 2) -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
-0.5 to +7.0 V
-0.5 to +7.0 V
-0.5 to +7.0 V
V
- 20 mA
± 20 mA
± 25 mA
± 50 mA
-65 to +150 °C
300 °C
Table 3: RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
V
T
dt/dv
1) Output in OFF State
2) High or Low State
from 0.8V to 2V
3) V
IN
2/12
Supply Voltage
CC
Input Voltage
I
Output Voltage (see note 1)
O
Output Voltage (see note 2) 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (see note 3) (V
= 5.0 ± 0.5V)
CC
4.5 to 5.5 V
0 to 5.5 V
0 to 5.5 V
CC
-55 to 125 °C
0 to 20 ns/V
V
Table 4: DC Specifications
Symbol Parameter
V
V
V
+I
I
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
High Impedance
OZ
Output Leakage
Current
Input Leakage
I
I
Current
I
Quiescent Supply
CC
Current
Additional Worst
CC
Case Supply
Current
Output Leakage
OPD
Current
4.5 to
4.5 to
4.5 to
Test Condition Value
T
= 25°C
V
CC
(V)
5.5
5.5
4.5
4.5
4.5
4.5
5.5
0 to
5.5
5.5
IO=-50 µA
=-8 mA
I
O
IO=50 µA
=8 mA
I
O
= VIH or V
V
I
VO = 0V to 5.5V
V
= 5.5V or GND
I
= VCC or GND
V
I
IL
A
Min. Typ. Max. Min. Max. Min. Max.
222V
0.8 0.8 0.8 V
4.4 4.5 4.4 4.4
3.94 3.8 3.7
0.0 0.1 0.1 0.1
0.36 0.44 0.55
±0.25 ± 2.5 ± 2.5 µA
± 0.1 ± 1.0 ± 1.0 µA
One Input at 3.4V,
5.5
other input at V
CC
1.35 1.5 1.5 mA
or GND
= 5.5V
0
V
OUT
0.5 5.0 5.0 µA
74VHCT125A
-40 to 85°C -55 to 125°C
22020µA
Unit
V
V
Table 5: AC Electrical Characteristics (Input t
Test Condition Value
Symbol Parameter
t
Propagation Delay
PLH
PHL
PZL
PZH
PLZ
PHZ
Time
Output Disable
Time
Output Enable
Time
t
t
t
t
t
(*) Voltage range is 5.0V ± 0.5V
V
(V)
5.0
5.0
5.0
5.0
5.0
C
CC
L
(pF)
(*)
15 RL = 1 KΩ 3.8 5.5 1.0 6.5 1.0 6.5
(*)
50
RL = 1 K
(*)
15
RL = 1 K
(*)
50
RL = 1 K
(*)
50
RL = 1 K
= tf = 3ns)
r
= 25°C
T
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
Ω
Ω
Ω
Ω
5.3 7.5 1.0 8.5 1.0 8.5
3.6 5.1 1.0 6.0 1.0 6.0
5.1 7.1 1.0 8.0 1.0 8.0
6.1 8.8 1.0 10.0 1.0 10.0 ns
Unit
ns
ns
3/12
74VHCT125A
Table 6: Capacitive Characteristics
Test Condition Value
= 25°C
Symbol Parameter
T
A
Min. Typ. Max. Min. Max. Min. Max.
C
C
C
Input Capacitance
IN
Output
OUT
Capacitance
Power Dissipation
PD
Capacitance
410 10 10pF
10 pF
18 pF
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
Table 7: Dynamic Switching Characteristics
Test Condition Value
= 25°C
Symbol Parameter
V
V
Dynamic Low
OLP
Voltage Quiet
OLV
Output (note 1, 2)
Dynamic High
V
IHD
Voltage Input
(note 1, 3)
Dynamic Low
V
ILD
Voltage Input
(note 1, 3)
V
CC
(V)
5.0
C
5.0 2.0
= 50 pF
L
5.0 0.8
T
A
Min. Typ. Max. Min. Max. Min. Max.
0.3 0.8
-0.8 -0.3
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/4 (per c ircuit )
CC(opr)
-40 to 85°C -55 to 125°C
Unit
Unit
V
1) Worst case package.
2) Max number of outp ut s defined as (n). Data inpu t s are driven 0V to 3.0V, (n-1) outputs switc hi ng and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 3.0V. Inputs under test switching: 3.0V to threshold (V
(V
), f=1MHz.
IHD
ILD
4/12
), 0V to thresho l d
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