ST 74VHCT04A User Manual
74VHCT04A
HEX INVERTER
■HIGH SPEED: tPD = 4.7 ns (TYP.) at VCC = 5V
■LOW POWER DISSIPATION: ICC = 2 A (MAX.) at TA=25°C
■COMPATIBLE WITH TTL OUTPUTS: VIH = 2V (MIN.), VIL = 0.8V (MAX)
■POWER DOWN PROTECTION ON INPUTS & OUTPUTS
■SYMMETRICAL OUTPUT IMPEDANCE: |IOH| = IOL = 8 mA (MIN)
■BALANCED PROPAGATION DELAYS: tPLH tPHL
■OPERATING VOLTAGE RANGE: VCC(OPR) = 4.5V to 5.5V
■PIN AND FUNCTION COMPATIBLE WITH 74 SERIES 04
■IMPROVED LATCH-UP IMMUNITY
■LOW NOISE: VOLP = 0.8V (MAX.)
DESCRIPTION
The 74VHCT04A is an advanced high-speed CMOS HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology.
The internal circuit is composed of 3 stages including buffer output, which provides high noise immunity and stable output.
SOP TSSOP
Table 1: Order Codes
PACKAGE |
T & R |
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SOP |
74VHCT04AMTR |
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TSSOP |
74VHCT04ATTR |
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Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V since all inputs are equipped with TTL threshold.
All inputs and outputs are equipped with protection circuits against static discharge, giving them 2KV ESD immunity and transient excess voltage.
Figure 1: Pin Connection And IEC Logic Symbols
December 2004 |
Rev. 4 |
1/11 |
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74VHCT04A
Figure 2: Input Equivalent Circuit |
Table 2: Pin Description |
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PIN N° |
SYMBOL |
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NAME AND FUNCTION |
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1, 3, 5, 9, 11, |
1A to 6A |
Data Inputs |
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13 |
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2, 4, 6, 8, 10, |
1Y to 6Y |
Data Outputs |
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12 |
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7 |
GND |
Ground (0V) |
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14 |
VCC |
Positive Supply Voltage |
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Table 3: Truth Table |
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A |
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Y |
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L |
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H |
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H |
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L |
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Table 4: Absolute Maximum Ratings |
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Symbol |
Parameter |
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Value |
Unit |
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VCC |
Supply Voltage |
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-0.5 to +7.0 |
V |
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VI |
DC Input Voltage |
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-0.5 to +7.0 |
V |
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VO |
DC Output Voltage (see note 1) |
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-0.5 to +7.0 |
V |
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VO |
DC Output Voltage (see note 2) |
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-0.5 to VCC + 0.5 |
V |
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IIK |
DC Input Diode Current |
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- 20 |
mA |
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IOK |
DC Output Diode Current |
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± |
20 |
mA |
IO |
DC Output Current |
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± |
25 |
mA |
ICC or IGND |
DC VCC or Ground Current |
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± |
50 |
mA |
Tstg |
Storage Temperature |
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-65 to +150 |
°C |
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TL |
Lead Temperature (10 sec) |
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300 |
°C |
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Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied
1)VCC = 0V
2)High or Low State
Table 5: Recommended Operating Conditions
Symbol |
Parameter |
Value |
Unit |
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VCC |
Supply Voltage |
4.5 to 5.5 |
V |
VI |
Input Voltage |
0 to 5.5 |
V |
VO |
Output Voltage (see note 1) |
0 to 5.5 |
V |
VO |
Output Voltage (see note 2) |
0 to VCC |
V |
Top |
Operating Temperature |
-55 to 125 |
°C |
dt/dv |
Input Rise and Fall Time (see note 3) (VCC = 5.0 ± 0.5V) |
0 to 20 |
ns/V |
1)VCC = 0V
2)High or Low State
3)VIN from 0.8V to 2V
2/11
74VHCT04A
Table 6: DC Specifications
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
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-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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VIH |
High Level Input |
4.5 to |
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2 |
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2 |
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2 |
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V |
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Voltage |
5.5 |
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VIL |
Low Level Input |
4.5 to |
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0.8 |
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0.8 |
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0.8 |
V |
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Voltage |
5.5 |
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VOH |
High Level Output |
4.5 |
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IO=-50 A |
4.4 |
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4.5 |
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4.4 |
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4.4 |
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V |
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Voltage |
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4.5 |
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IO=-8 mA |
3.94 |
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3.8 |
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3.7 |
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VOL |
Low Level Output |
4.5 |
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IO=50 A |
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0.0 |
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0.1 |
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0.1 |
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0.1 |
V |
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Voltage |
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4.5 |
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IO=8 mA |
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0.36 |
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0.44 |
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0.55 |
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II |
Input Leakage |
0 to |
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VI = 5.5V or GND |
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± |
0.1 |
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± |
1.0 |
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± |
1.0 |
A |
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Current |
5.5 |
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ICC |
Quiescent Supply |
5.5 |
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VI = VCC or GND |
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2 |
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20 |
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20 |
A |
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Current |
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+ICC |
Additional Worst |
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One Input at 3.4V, |
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Case Supply |
5.5 |
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other input at VCC |
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1.35 |
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1.5 |
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1.5 |
mA |
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Current |
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or GND |
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IOPD |
Output Leakage |
0 |
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VOUT = 5.5V |
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0.5 |
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5.0 |
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5.0 |
A |
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Current |
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Table 7: AC Electrical Characteristics (Input tr = tf = 3ns) |
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC (*) |
CL |
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TA = 25°C |
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-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
(pF) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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tPLH |
Propagation Delay |
5.0 |
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15 |
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4.7 |
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6.7 |
1.0 |
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7.5 |
1.0 |
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7.5 |
ns |
tPHL |
Time |
5.0 |
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50 |
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5.5 |
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7.7 |
1.0 |
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8.5 |
1.0 |
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8.5 |
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(*) Voltage range is 5.0V ± 0.5V |
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Table 8: Capacitive Characteristics |
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Test Condition |
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Value |
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Symbol |
Parameter |
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TA = 25°C |
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-40 to 85°C |
-55 to 125°C |
Unit |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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CIN |
Input Capacitance |
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4 |
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10 |
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10 |
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10 |
pF |
CPD |
Power Dissipation |
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14 |
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pF |
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Capacitance |
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(note 1) |
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1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. ICC(opr) = CPD x VCC x fIN + ICC/6 (per gate)
3/11
74VHCT04A
Table 9: Dynamic Switching Characteristics
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Test Condition |
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Value |
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Symbol |
Parameter |
VCC |
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TA = 25°C |
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-40 to 85°C |
-55 to 125°C |
Unit |
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(V) |
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Min. |
Typ. |
Max. |
Min. |
Max. |
Min. |
Max. |
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VOLP |
Dynamic Low |
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0.3 |
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0.8 |
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Voltage Quiet |
5.0 |
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VOLV |
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-0.8 |
-0.3 |
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Output (note 1, 2) |
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VIHD |
Dynamic High |
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CL = 50 pF |
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Voltage Input |
5.0 |
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2.0 |
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V |
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(note 1, 3) |
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VILD |
Dynamic Low |
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Voltage Input |
5.0 |
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0.8 |
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(note 1, 3) |
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1)Worst case package.
2)Max number of outputs defined as (n). Data inputs are driven 0V to 3.0V, (n-1) outputs switching and one output at GND.
3)Max number of data inputs (n) switching. (n-1) switching 0V to 3.0V. Inputs under test switching: 3.0V to threshold (VILD), 0V to threshold (VIHD), f=1MHz.
Figure 3: Test Circuit
CL =15/50pF or equivalent (includes jig and probe capacitance)
RT = ZOUT of pulse generator (typically 50Ω )
4/11
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