ST 74VHC125 User Manual

74VHC125

QUAD BUS BUFFERS (3-STATE)

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

= 4 µA (MAX.) at TA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

= V

NIH

■ POWER DOWN PROTECTION ON INPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

■ BALANCED PROPAGATION DELAYS:

t

PLH

■ OPERATING VOLTAGE RANGE:

V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

NIL

| = IOL = 8mA (MIN)

≅ t

PHL

(OPR) = 2V to 5.5V

= 3.8ns (TYP.) at VCC = 5V

PD

= 28% VCC (MIN.)

74 SERIES 125

■ IMPROVED LATCH-UP IMMUN ITY

■ LOW NOISE: V

= 0.8V (MAX.)

OLP

DESCRIPTION

The 74VHC125 is an advanced high-speed
CMOS QUAD BUS BUFFERS fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology.
The device requires the 3-STATE control input G
to be set high to pla ce the out put in to the high
impedance state.

TSSOPSOP

Table 1: Order Codes

PACKAGE T & R

SOP 74VHC125MTR

TSSOP 74VHC125TTR

Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static disc harge, giving
them 2KV ESD immunity and transient excess
voltage.

Figure 1: Pin Connection An d I E C Logic Symbols

Rev. 7

1/12November 2004

74VHC125

Figure 2: Input Equivalent Circuit Table 2: Pin Description

PIN N° SYMBOL NAME AND FUNCTION

1, 4, 10, 13 1G

2, 5, 9, 12 1A to 4A Data Inputs
3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14

Table 3: Truth Table

to 4G Output Enable Inputs

V

CC

Positive Supply Voltage

AG

Y

XHZ

LLL

HLH

X : Don‘t Care
Z : High Impedance

Table 4: Absolute Maximum Ratings

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

-0.5 to +7.0 V

-0.5 to +7.0 V
V

- 20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

300 °C

Table 5: Recommended Operating Conditions

Symbol Parameter Value Unit

V

V
V
T

dt/dv

1) VIN from 30 % t o 70% of V

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V
(V

CC

= 3.3 ± 0.3V)

CC

= 5.0 ± 0.5V)

CC

2 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 100

0 to 20

2/12

V

ns/V

Table 6: DC Specifications

Symbol Parameter

V

V

V

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

I

High Impedance

OZ

Output Leakage
Current

Input Leakage

I

I

Current

I

Quiescent Supply

CC

Current

74VHC125

Test Condition Value

= 25°C

T

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

2.0 1.5 1.5 1.5

3.0 to

5.5

0.7V

CC

2.0 0.5 0.5 0.5

3.0 to

5.5

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

5.5

0 to

5.5

5.5

IO=-50 µA
I

=-50 µA

O

=-50 µA

I

O

=-4 mA

I

O

=-8 mA

I

O

IO=50 µA

=50 µA

I

O

=50 µA

I

O

=4 mA

I

O

=8 mA

I

O

= VIH or V

V

I

IL

VO = VCC or GND

V

= 5.5V or GND

I

= VCC or GND

V

I

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

4.4 4.5 4.4 4.4

2.58 2.48 2.4

3.94 3.8 3.7

0.3V

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

0.0 0.1 0.1 0.1

±0.25 ± 2.5 ± 2.5 µA

-40 to 85°C -55 to 125°C

CC

0.7V

CC

0.3V

CC

0.7V

CC

0.36 0.44 0.55

0.36 0.44 0.55

± 0.1 ± 1 ± 1 µA

44040µA

0.3V

CC

Unit

V

V

V

V

Table 7: AC Electrical Characteristics (Input t

Test Condition Value

Symbol Parameter

t

Propagation Delay

PLH
PHL

PLZ

PHZ

PZL

PZH

Time

Output Disable
Time

Output Enable
Time

0.5V

t

t
t

t
t

(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5.0V ±

V

3.3

3.3

5.0

5.0

3.3

3.3

5.0

5.0

3.3

5.0

C

CC

(V)

L

(pF)

(*)

15 5.6 8.0 1.0 9.5 1.0 9.5

(*)

50 8.1 11.5 1.0 13.0 1.0 13.0

(**)

15 3.8 5.5 1.0 6.5 1.0 6.5

(**)

50 5.3 7.5 1.0 8.5 1.0 8.5

(*)

(*)
(**)
(**)

(*)
(**)

15
50
15
50
50
50

R

= 1 KΩ

L

R

= 1 KΩ

L

R

= 1 KΩ

L

R

= 1 KΩ

L

R

= 1 KΩ

L

R

= 1 KΩ

L

= tf = 3ns)

r

= 25°C

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

5.4 8.0 1.0 9.5 1.0 9.5

7.9 11.5 1.0 13.0 1.0 13.0

3.6 5.1 1.0 6.0 1.0 6.0

5.1 7.1 1.0 8.0 1.0 8.0

9.5 13.2 1.0 15.0 1.0 15.0

6.1 8.8 1.0 10.0 1.0 10.0

Unit

ns

ns

ns

3/12

74VHC125

Table 8: Capacitive Characteristics

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

C

Input Capacitance

IN

Output

OUT

Capacitance
Power Dissipation

PD

Capacitance

610 10 10pF
8pF

16 pF

(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

Table 9: Dynamic Switching Characteristics

Test Condition Value

= 25°C

Symbol Parameter

V
V

Dynamic Low

OLP

Voltage Quiet

OLV

Output (note 1, 2)
Dynamic High

V

IHD

Voltage Input
(note 1, 3)

Dynamic Low

V

ILD

Voltage Input
(note 1, 3)

V

CC

(V)

5.0

= 50 pF

5.0 3.5 V

C

L

5.0 1.5 V

T

A

Min. Typ. Max. Min. Max. Min. Max.

0.3 0.8

-0.8 -0.3

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC/4 (per c ircuit )

CC(opr)

-40 to 85°C -55 to 125°C

Unit

Unit

V

1) Worst case package.

2) Max number of outp ut s defined as (n). Data inpu t s are driven 0V to 5.0V, (n-1) outputs switc hi ng and one output at GND.

3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (V
(V

), f=1MHz.

IHD

ILD

), 0V to thresho l d

4/12