ST 74VHC05 User Manual

74VHC05

HEX INVERTER (OPEN DRAIN)

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

= 2 µA (MAX.) at TA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

= V

NIH

■ POWER DOWN PROTECTION ON INPUTS

■ OPERATING VOLTAGE RANGE:

V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

NIL

(OPR) = 2V to 5.5V

= 3.8ns (TYP.) at VCC = 5V

PD

= 28% VCC (MIN.)

74 SERIES 05

■ IMPROVED LATCH-UP IMMUN ITY

■ LOW NOISE: V

= 0.8V (MAX.)

OLP

DESCRIPTION

The 74VHC05 is an advanced high-speed CMOS OPEN DRAIN HEX INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C

2

MOS technology. The internal circuit is composed of 3 stages including buffer ou tput, whi ch provid es hig h no ise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no

TSSOPSOP

Table 1: Order Codes

PACKAGE T & R

SOP 74VHC05MTR

TSSOP 74VHC05TTR

regard to the supply voltage. This device can be used to interface 5V to 3V. All inputs and outputs are equipped with protection circuits against static disc harge, giving them 2KV ESD immunity and transient excess voltage.

Figure 1: Pin Connection An d I E C Logic Symbols

Rev. 5

1/11November 2004

74VHC05

Figure 2: Inp ut Eq ui v al e nt C irc ui t Table 2: Pin Des cription

PIN N° SYMBOL NAME AND FUNCTION

1, 3, 5, 9, 1 1,

13

2, 4, 6, 8, 10,

12

7 GND Ground (0V)

14

Table 3: Trut h Table

Z: High Imped ance

Table 4: Absolute Maximum Ratings

Symbol Parameter Value Unit

V

V V I

I

OK

I

or I

I

CC

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

Table 5: Recommended Operating Conditions

1A to 6A Data Inputs

1Y to 6Y Data Outputs

V

CC

Positive Supply Voltage

AY

LZ

HL

-0.5 to +7.0 V

-0.5 to +7.0 V V

- 20 mA

± 20 mA ± 25 mA ± 75 mA

-65 to +150 °C

300 °C

Symbol Parameter Value Unit

V

T

dt/dv

1) VIN from 30% to 70% of V

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V (V

CC

= 3.3 ± 0.3V)

CC

= 5.0 ± 0.5V)

CC

2 to 5.5 V 0 to 5.5 V

CC

-55 to 125 °C 0 to 100

0 to 20

2/11

V

ns/V

Table 6: DC Specifications

Symbol Parameter

V

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage

Low Level Output

OL

Voltage

I

High Impedance

OZ

Output Leakage Current

Input Leakage

I

Current Quiescent Supply

I

CC

Current

V

(V)

2.0 1.5 1.5 1.5

3.0 to

5.5

2.0 0.5 0.5 0.5

3.0 to

5.5

2.0

3.0

4.5

3.0

4.5

5.5

0 to

5.5

Test Condition Value

= 25°C

T

CC

A

Min. Typ. Max. Min. Max. Min. Max.

0.7V

CC

0.3V

CC

IO=50 µA I

=50 µA

O

=50 µA

I

O

=4 mA

I

O

=8 mA

I

O

= VIH or V

V

I

IL

VO = VCC or GND

= 5.5V or GND

V

I

= VCC or GND

V

I

0.0 0.1 0.1 0.1

0.36 0.44 0.55

±0.25 ± 2.5 ± 2.5 µA

± 0.1 ± 1 ± 1 µA

22020µA

74VHC05

-40 to 85°C -55 to 125°C

0.7V

CC

0.3V

CC

0.7V

CC

0.3V

CC

Unit

V

Table 7: AC Electrical Characteristics (Input t

Test Condition Value

Symbol Parameter

t

(*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5.0V ±

PZL

PLZ

Output Enable Time

Output Disable Time

0.5V

V

3.3

5.0

3.3

5.0

(V)

CC

(*)

(*) (**) (**)

(*) (**)

C

(pF)

15 50 15 50 50 50

L

R

= 1 KΩ

L

R

= 1 KΩ

L

R

= 1 KΩ

L

R

= 1 KΩ

L

R

= 1 KΩ

L

R

= 1 KΩ

L

= tf = 3ns)

r

= 25°C

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

5.0 7.1 1.0 8.5 1.0 8.5

7.5 10.6 1.0 12.0 1.0 12.0

3.8 5.5 1.0 6.5 1.0 6.5

5.3 7.5 1.0 8.5 1.0 8.5

7.5 10.6 1.0 12.0 1.0 12.0

5.3 7.5 1.0 8.5 1.0 8.5

Unit

ns

3/11

74VHC05

Table 8: Capacitive Characteristics

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

Input Capacitance

IN

Output

OUT

Capacitance Power Dissipation

PD

Capacitance

610 10 10pF 8pF

3pF

(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

Table 9: Dynamic Switching Characteristics

Test Condition Value

= 25°C

Symbol Parameter

V V

Dynamic Low

OLP

Voltage Quiet

OLV

Output (note 1, 2) Dynamic High

V

IHD

Voltage Input (note 1, 3)

Dynamic Low

V

ILD

Voltage Input (note 1, 3)

V

CC

(V)

5.0

= 50 pF

5.0 3.5 V

C

L

5.0 1.5 V

T

A

Min. Typ. Max. Min. Max. Min. Max.

0.4 0.8

-0.8 -0.4

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC/6 (per gate)

CC(opr)

-40 to 85°C -55 to 125°C

Unit

V

1) Worst case package.

2) Max number of outp ut s defined as (n). Data inpu t s are driven 0V to 5.0V, (n-1) outputs switc hi ng and one output at GND.

3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (V (V

), f=1MHz.

IHD

ILD

Figure 3: Test Circuit

CL = 15/50pF or e qui valent (inc lu des jig and pro be capacitan ce)

= R1 = 1KΩ or equivalent

R

L

R

= Z

of pulse generator (typically 50Ω)

T

OUT

), 0V to thresho l d

4/11