74VHC04
HEX INVERTER
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
= 2 µA (MAX.) at TA=25°C
CC
■ HIGH NOISE IMMUNITY:
V
= V
NIH
■ POWER DOWN PROTECTION ON INPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
OH
■ BALANCED PROPAGATION DELAYS:
t
PLH
■ OPERATING VOLTAGE RANGE:
V
CC
■ PIN AND FUNCTION COMPATIBLE WITH
NIL
| = IOL = 8 mA (MIN)
≅ t
PHL
(OPR) = 2V to 5.5V
= 3.8ns (TYP.) at VCC = 5V
PD
= 28% VCC (MIN.)
74 SERIES 04
■ IMPROVED LATCH-UP IMMUN ITY
■ LOW NOISE: V
= 0.8V (MAX.)
OLP
DESCRIPTION
The 74VHC04 is an advanced high-speed CMOS
HEX INVERTER fabricated with sub-micron
silicon gate and double-layer metal wiring C
2
MOS
technology.
The internal circuit is composed of 3 stages
including buffer ou tput, whi ch provid es hig h no ise
immunity and stable output.
TSSOPSOP
Table 1: Order Codes
PACKAGE T & R
SOP 74VHC04MTR
TSSOP 74VHC04TTR
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
used to interface 5V to 3V.
All inputs and outputs are equipped with
protection circuits against static disc harge, giving
them 2KV ESD immunity and transient excess
voltage.
Figure 1: Pin Connection An d I E C Logic Symbols
Rev. 5
1/11November 2004
74VHC04
Figure 2: Input Equivalent Circuit Table 2: Pin Description
PIN N° SYMBOL NAME AND FUNCTION
1, 3, 5, 9, 1 1,
13
2, 4, 6, 8, 10,
12
7 GND Ground (0V)
14
Table 3: Truth Table
Table 4: Absolute Maximum Ratings
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
or I
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
Table 5: Recommended Operating Conditions
1A to 6A Data Inputs
1Y to 6Y Data Outputs
V
CC
Positive Supply Voltage
AY
LH
HL
-0.5 to +7.0 V
-0.5 to +7.0 V
V
- 20 mA
± 20 mA
± 25 mA
± 75 mA
-65 to +150 °C
300 °C
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) VIN from 30 % t o 70% of V
Supply Voltage
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) (V
(V
CC
= 3.3 ± 0.3V)
CC
= 5.0 ± 0.5V)
CC
2 to 5.5 V
0 to 5.5 V
CC
-55 to 125 °C
0 to 100
0 to 20
2/11
V
ns/V
Table 6: DC Specifications
Symbol Parameter
V
V
V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
I
Quiescent Supply
CC
Current
V
3.0 to
3.0 to
0 to
74VHC04
Test Condition Value
= 25°C
T
CC
(V)
A
Min. Typ. Max. Min. Max. Min. Max.
2.0 1.5 1.5 1.5
0.7V
5.5
CC
2.0 0.5 0.5 0.5
5.5
2.0
3.0
4.5
3.0
4.5
2.0
3.0
4.5
3.0
4.5
VI = 5.5V or GND
5.5
V
5.5
IO=-50 µA
I
=-50 µA
O
=-50 µA
I
O
=-4 mA
I
O
=-8 mA
I
O
IO=50 µA
=50 µA
I
O
=50 µA
I
O
=4 mA
I
O
=8 mA
I
O
= VCC or GND
I
1.9 2.0 1.9 1.9
2.9 3.0 2.9 2.9
4.4 4.5 4.4 4.4
2.58 2.48 2.4
3.94 3.8 3.7
0.3V
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
0.0 0.1 0.1 0.1
-40 to 85°C -55 to 125°C
CC
0.7V
CC
0.3V
CC
0.7V
CC
0.3V
0.36 0.44 0.55
0.36 0.44 0.55
± 0.1 ± 1 ± 1 µA
22020µA
CC
Unit
V
V
V
V
Table 7: AC Electrical Characteristics (Input t
Test Condition Value
Symbol Parameter
t
Propagation Delay
PLH
PHL
Time
0.5V
t
(*) Voltage range is 3.3V ± 0.3V
(**) Voltage range is 5.0V ±
V
3.3
3.3
5.0
5.0
C
CC
(V)
L
(pF)
(*)
15 5.0 8.9 1.0 10.5 1.0 10.5
(*)
50 7.9 11.4 1.0 13.0 1.0 13.0
(**)
15 3.8 5.5 1.0 6.5 1.0 6.5
(**)
50 5.3 7.5 1.0 8.5 1.0 8.5
= tf = 3ns)
r
= 25°C
T
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
Unit
ns
3/11
74VHC04
Table 8: Capacitive Characteristics
Test Condition Value
= 25°C
Symbol Parameter
T
A
Min. Typ. Max. Min. Max. Min. Max.
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
410 10 pF
15 pF
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I
Table 9: Dynamic Switching Characteristics
Test Condition Value
= 25°C
Symbol Parameter
V
V
Dynamic Low
OLP
Voltage Quiet
OLV
Output (note 1, 2)
Dynamic High
V
IHD
Voltage Input
(note 1, 3)
Dynamic Low
V
ILD
Voltage Input
(note 1, 3)
V
CC
(V)
5.0
= 50 pF
5.0 3.5 V
C
L
5.0 1.5 V
T
A
Min. Typ. Max. Min. Max. Min. Max.
0.3 0.8
-0.8 -0.3
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/6 (per gate)
CC(opr)
-40 to 85°C -55 to 125°C
Unit
Unit
V
1) Worst case package.
2) Max number of outp ut s defined as (n). Data inpu t s are driven 0V to 5.0V, (n-1) outputs switc hi ng and one output at GND.
3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (V
(V
), f=1MHz.
IHD
ILD
Figure 3: Test Circuit
CL = 15/50pF or e qui valent (inc lu des jig and pro be capacitan ce)
= Z
R
of pulse generator (typically 50Ω)
T
OUT
), 0V to thresho l d
4/11