ST 74VHC00 User Manual

74VHC00

QUAD 2-INPUT NAND GATE

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

= 2 µA (MAX.) at TA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

= V

NIH

■ POWER DOWN PROTECTION ON INPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

OH

■ BALANCED PROPAGATION DELAYS:

t

PLH

■ OPERATING VOLTAGE RANGE:

V

CC

■ PIN AND FUNCTION COMPATIBLE WITH

NIL

| = IOL = 8mA (MIN)

≅ t

PHL

(OPR) = 2V to 5.5V

= 3.7ns (TYP.) at VCC = 5V

PD

= 28% VCC (MIN.)

74 SERIES 00

■ IMPROVED LATCH-UP IMMUN ITY

■ LOW NOISE: V

= 0.8V (MAX.)

OLP

DESCRIPTION

The 74VHC00 is an advanced high-speed CMOS QUAD 2-INPUT NAND GATE fabricated with sub-micron silicon gate and double-layer metal wiring C

2

MOS technology. The internal circuit is composed of 3 stages including buffer ou tput, whi ch provid es hig h no ise immunity and stable output.

TSSOPSOP

Table 1: Order Codes

PACKAGE T & R

SOP 74VHC00MTR

TSSOP 74VHC00TTR

Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V. All inputs and outputs are equipped with protection circuits against static disc harge, giving them 2KV ESD immunity and transient excess voltage.

Figure 1: Pin Connection An d I E C Logic Symbols

Rev. 5

1/11November 2004

74VHC00

Figure 2: Input Equivalent Circuit Table 2: Pin Description

PIN N° SYMBOL NAME AND FUNCTION

1, 4, 9, 12 1A to 4A Data Inputs

2, 5, 10, 13 1B to 4B Data Inputs

3, 6, 8, 11 1Y to 4Y Data Outputs

7 GND Ground (0V)

14

Table 3: Truth Table

ABY

LLH

LHH HLH HHL

Table 4: Absolute Maximum Ratings

Symbol Parameter Value Unit

V

I

OK

I

or I

I

CC

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

Table 5: Recommended Operating Conditions

V

CC

Positive Supply Voltage

-0.5 to +7.0 V

- 20 mA

± 20 mA ± 25 mA ± 50 mA

-65 to +150 °C 300 °C

V

Symbol Parameter Value Unit

V

V V T

dt/dv

1) VIN from 30 % t o 70% of V

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V (V

CC

= 3.3 ± 0.3V)

CC

= 5.0 ± 0.5V)

CC

2 to 5.5 V 0 to 5.5 V

CC

-55 to 125 °C 0 to 100

0 to 20

2/11

V

ns/V

Table 6: DC Specifications

Symbol Parameter

V

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current

I

Quiescent Supply

CC

Current

Test Condition Value

V

(V)

CC

T

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

= 25°C

2.0 1.5 1.5 1.5

3.0 to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

2.0 0.5 0.5 0.5

3.0 to

5.5

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

0 to

5.5

IO=-50 µA I

=-50 µA

O

=-50 µA

I

O

=-4 mA

I

O

=-8 mA

I

O

IO=50 µA

=50 µA

I

O

=50 µA

I

O

=4 mA

I

O

=8 mA

I

O

VI = 5.5V or GND

= VCC or GND

V

I

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

4.4 4.5 4.4 4.4

2.58 2.48 2.4

3.94 3.8 3.7

0.3V

CC

0.3V

CC

0.0 0.1 0.1 0.1

0.36 0.44 0.55

± 0.1 ± 1 ± 1 µA

22020µA

74VHC00

Unit

0.3V

CC

V

Table 7: AC Electrical Characteristics (Input t

Test Condition Value

Symbol Parameter

t

PLH tPHL

(*) Voltage range is 3.3V ± 0.3V (**) Voltage range is 5.0V ±

Propagation Delay Time

0.5V

V

3.3

5.0

C

CC

(V)

L

(pF)

(*)

15 5.5 7.9 1.0 9.5 1.0 9.5

(*)

50 8.0 11.4 1.0 13.0 1.0 13.0

(**)

15 3.7 5.5 1.0 6.5 1.0 6.5

(**)

50 5.2 7.5 1.0 8.5 1.0 8.5

= tf = 3ns)

r

= 25°C

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit

ns

3/11

74VHC00

Table 8: Capacitive Characteristics

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance

610 10 10pF

19 pF

(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

Table 9: Dynamic Switching Characteristics

Test Condition Value

= 25°C

Symbol Parameter

V V

Dynamic Low

OLP

Voltage Quiet

OLV

Output (note 1, 2) Dynamic High

V

IHD

Voltage Input (note 1, 3)

Dynamic Low

V

ILD

Voltage Input (note 1, 3)

V

CC

(V)

5.0

= 50 pF

5.0 3.5 V

C

L

5.0 1.5 V

T

A

Min. Typ. Max. Min. Max. Min. Max.

0.3 0.8

-0.8 -0.3

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC/4 (per gate)

CC(opr)

-40 to 85°C -55 to 125°C

Unit

V

1) Worst case package.

2) Max number of outp ut s defined as (n). Data inpu t s are driven 0V to 5.0V, (n-1) outputs switc hi ng and one output at GND.

3) Max number of data inputs (n) switching. (n-1) switching 0V to 5.0V. Inputs under test switching: 5.0V to threshold (V (V

), f=1MHz.

IHD

ILD

Figure 3: Test Circuit

CL =15/50pF or equivalent (i ncludes jig an d probe capac i tance)

= Z

R

of pulse generator (typically 50Ω)

T

OUT

), 0V to thresho l d

4/11