ST 74V2T70 User Manual

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74V2T70

TRIPLE BUFFER

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) atTA=25°C

CC

■ COMPATIBLE WITHTTL OUTPUTS:

V

=2V(MIN),VIL=0.8V(MAX)

IH

■ POWER DOWN PROT ECTION ON INPUT

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=8mA(MIN)atVCC=4.5V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANG E:

V

(OPR) = 4.5V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

= 3.6ns (TYP.) at VCC=5V

PD

DESCRIPTION

The 74V2T70 is an advanced high-speed CMOS
TRIPLE BUFFER fabricated with s ub-micron
silicon gate and double-layer me tal wiring C

2

MOS

technology.

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2T70STR

The internal circuit is composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is prov ided on input and 0
to 7V c an be accepted on input with no regard t o
the supply voltage. This device can be used to
interface5Vto3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/7June 2003

74V2T70

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME QND FUNCTION

1, 3, 6 1A, 2A, 3A Data Inputs
7, 5, 2 1Y, 2Y, 3Y Data Outputs

4 GND Ground (0V)
8

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC+ 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

V

CC

Positive Supply Voltage

AY

LL

HH

-0.5 to +7.0 V

-0.5 to +7.0 V
V

-20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

260 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V
V
T

dt/dv

1) VINfrom0.8V to 2V

2/7

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V

=5.0±0.5V)

CC

4.5 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 20 ns/V

V

DC SPECIFICATIONS

Symbol Parameter

V

V

V

+

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage
High Level Output

OH

Voltage
Low Level Output

OL

Voltage
Input Leakage

I

I

Current
Quiescent Supply

I

CC

Current

I

Additional Worst

CC

Case Supply
Current

Test Condition Value

= 25°C

T

V

CC

(V)

4.5to

A

Min. Typ. Max. Min. Max. Min. Max.

222V

5.5

4.5to

5.5

4.5

4.5

4.5

4.5

0to

5.5

5.5

IO=-50 µA 4.4 4.5 4.4 4.4 V

=-8 mA 3.94 3.8 3.7

I

O

IO=50 µA 0.0 0.1 0.1 0.1 V

=8 mA 0.36 0.44 0.55

I

O

VI= 5.5V or GND

V

I=VCC

or GND

One Input at 3.4V,
other input at V

5.5

CC

or GND

74V2T70

-40 to 85°C -55 to 125°C

0.8 0.8 0.8 V

± 0.1 ± 1.0 ± 1.0 µA

11020µA

1.35 1.5 1.5 mA

Unit

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

Test Condition Value

Symbol Parameter

t
t

(*) Voltage range is5.0V ± 0.5V

Propagation Delay

PLH

Time

PHL

T

V

CC

(V)

C

(pF)

L

A

Min. Typ. Max. Min. Max. Min. Max.

5.0 (*) 15 3.6 6.0 1.0 7.0 1.0 8.0

5.0 (*) 50 4.0 6.5 1.0 7.5 1.0 8.5

-40 to 85°C -55 to 125°C

Unit

ns

= 25°C

CAPACITIVE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance

410 10 10pF

14 pF

(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

-40 to 85°C -55 to 125°C

CC(opr)=CPDxVCCxfIN+ICC

Unit

/3

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