ST 74V2T66 User Manual
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■ HIGH SPEED:
t
= 0.6ns (TYP.) at VCC=5V
PD
■ COMPATIBLE WITH TTL LEVEL
■ LOW POWER DISSIPATION:
I
=1µA(MAX.) at TA= 25°C
CC
■ LOW "ON" RESISTANCE:
R
=10Ω (TYP.) AT VCC=5VI
ON
■ SINE WAV E DIS TORTION:
0.04% AT V
■ OPERATING VOLTAGERANGE:
V
(OPR) = 4.5V TO 5.5V
CC
■ IMPROVED LATCH-UP IMMUNITY
=5.0V,f=1KHz
CC
I/O
=1mA
74V2T66
DUAL BILATERAL SWITCH
SOT23-8L
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2T66STR
DESCRIPTION
The 74V2T66 is an advanced high-speed CMOS
DUAL BILATERAL SWITCH fabricated in silicon
gate C
2
MOS technology. It achieves high speed
propagation delay and VERY LOW ON
resistances while maintaining true CMOS low
power consumption. This b ilateral switch handles
rail to rail analog and digital signals that may vary
across the full power supply range (from GND to
V
)
CC
The C input is provided to control the switch and
it’s compatible with standard CMOS output; the
PIN CONNECTION AND IEC LOGIC SYMBOLS
switch is ON (port I/O is connected to Port O/ I)
when the C input is held high and OFF (high
impedance state exists between the t w o ports)
when C is held low. It can be used in many
application as Battery P owered System, T est
Equipment. It’s available in the comm erc ial and
extended temperature range in SOT23-8L
package. All inputs and output are equipped with
protection circuits against static discharge, gi v ing
them ESD immunity and tra nsient excess voltage.
1/9June 2003
74V2T66
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 5 1I/O, 2I/O Independent Input/Output
2, 6 1O/I, 2O/I Independent Output/Input
7, 3 1C, 2C
4 GND Ground (0V)
8
V
CC
TRUTH TABLE
CONTROL SWITCH FUNCTION
HON
L OFF *
* : High Impedance State
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
V
I
I
I
OK
I
or I
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Supply Voltage
CC
DC Input Voltage -0.5 to VCC+ 0.5
I
DC Control Input Voltage
IC
DC Output Voltage -0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Control Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
Enable Input (Active
HIGH)
Positive Supply Voltage
-0.5 to +7.0 V
V
-0.5 to +7.0 V
V
± 20 mA
-20 mA
± 20 mA
± 50 mA
± 50 mA
-65 to +150 °C
300 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
V
T
dt/dv
1) VINfrom0.8V to 2V on control pin
2/9
Supply Voltage
CC
Input Voltage 0 to V
I
Control Input Voltage
IC
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) V
CC
= 5.0V
4.5 to 5.5 V
CC
0 to 5.5 V
CC
-55 to 125 °C
0 to 20 ns/V
V
V
DC SPECIFICATIONS
Symbol Parameter
V
R
R
I
I
(*) Voltage range is5V± 0.5V
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
ON Resistance
ON
ON Resistance
ON
Input/Output
OFF
Leakage Current
(SWITCH OFF)
I
Switch Input
IZ
Leakage Current
(SWITCH ON,
OUTPUT OPEN)
Control Input
I
IN
Leakage Current
Quiescent Supply
CC
Current
Test Condition Value
= 25°C
T
V
(V)
5.0
5.0
5.0
5.0
CC
(*)
(*)
(*)
(*)
VIC=V
V
I/O=VCC
I
I/O
VIC=V
V
I/O=VCC
I
I/O
IH
to GND
≤ 1mA
IH
or GND
≤ 1mA
A
Min. Typ. Max. Min. Max. Min. Max.
222V
12 17 20 24 V
10 14 18 20 V
5.5 VOS=VCCto GND
V
IS=VCC
V
IC=VIL
to GND
5.5
to GND
V
IC=VIH
= 5.5V or GND
or GND
± 0.1 ± 1.0 ± 1.0 µA
0to
5.5
5.5
V
OS=VCC
V
IC
V
I=VCC
74V2T66
-40 to 85°C -55 to 125°C
0.8 0.8 0.8 V
±0.1 ± 1 ± 1 µA
±0.1 ± 1 ± 5 µA
11020µA
Unit
AC ELECTRICAL CHARACTERISTICS (CL= 50pF, Input tr=tf= 3ns)
Test Condition Value
= 25°C
Symbol Parameter
t
t
PLZ
t
PHZ
t
PZL
t
PZH
(*) Voltage range is5.0V ± 0.5V
PD
Delay Time
Output Disable
Time
Output Enable
Time
V
(V)
5.0
5.0
5.0
CC
(*)
(*)
(*)
RL= 500 Ω
RL=1KΩ
T
A
Min. Typ. Max. Min. Max. Min. Max.
0.6 0.7 1.0 2.0 ns
6.0 7.5 9.0 10.0 ns
2.5 4.0 5.0 7.0 ns
-40 to 85°C -55 to 125°C
Unit
3/9
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