Datasheet 74V2T66 Datasheet (ST)

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■ HIGH SPEED:

t

= 0.6ns (TYP.) at VCC=5V

PD

■ COMPATIBLE WITH TTL LEVEL

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) at TA= 25°C

CC

■ LOW "ON" RESISTANCE:

R

=10Ω (TYP.) AT VCC=5VI

ON

■ SINE WAV E DIS TORTION:

0.04% AT V

■ OPERATING VOLTAGERANGE:

V

(OPR) = 4.5V TO 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

=5.0V,f=1KHz

CC

I/O

=1mA

74V2T66

DUAL BILATERAL SWITCH

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2T66STR

DESCRIPTION

The 74V2T66 is an advanced high-speed CMOS
DUAL BILATERAL SWITCH fabricated in silicon
gate C

2

MOS technology. It achieves high speed
propagation delay and VERY LOW ON
resistances while maintaining true CMOS low
power consumption. This b ilateral switch handles
rail to rail analog and digital signals that may vary
across the full power supply range (from GND to
V

)

CC

The C input is provided to control the switch and
it’s compatible with standard CMOS output; the

PIN CONNECTION AND IEC LOGIC SYMBOLS

switch is ON (port I/O is connected to Port O/ I)
when the C input is held high and OFF (high
impedance state exists between the t w o ports)
when C is held low. It can be used in many
application as Battery P owered System, T est
Equipment. It’s available in the comm erc ial and
extended temperature range in SOT23-8L
package. All inputs and output are equipped with
protection circuits against static discharge, gi v ing
them ESD immunity and tra nsient excess voltage.

1/9June 2003

74V2T66

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 5 1I/O, 2I/O Independent Input/Output
2, 6 1O/I, 2O/I Independent Output/Input

7, 3 1C, 2C

4 GND Ground (0V)
8

V

CC

TRUTH TABLE

CONTROL SWITCH FUNCTION

HON

L OFF *

* : High Impedance State

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

V

I
I

I

OK

I

or I

I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied

Supply Voltage

CC

DC Input Voltage -0.5 to VCC+ 0.5

I

DC Control Input Voltage

IC

DC Output Voltage -0.5 to VCC+ 0.5

O

DC Input Diode Current

IK

DC Control Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

Enable Input (Active
HIGH)

Positive Supply Voltage

-0.5 to +7.0 V
V

-0.5 to +7.0 V
V

± 20 mA

-20 mA

± 20 mA
± 50 mA
± 50 mA

-65 to +150 °C

300 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

V

V
T

dt/dv

1) VINfrom0.8V to 2V on control pin

2/9

Supply Voltage

CC

Input Voltage 0 to V

I

Control Input Voltage

IC

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) V

CC

= 5.0V

4.5 to 5.5 V

CC

0 to 5.5 V

CC

-55 to 125 °C
0 to 20 ns/V

V

V

DC SPECIFICATIONS

Symbol Parameter

V

R

R

I

I

(*) Voltage range is5V± 0.5V

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage
ON Resistance

ON

ON Resistance

ON

Input/Output

OFF

Leakage Current
(SWITCH OFF)

I

Switch Input

IZ

Leakage Current
(SWITCH ON,
OUTPUT OPEN)

Control Input

I

IN

Leakage Current
Quiescent Supply

CC

Current

Test Condition Value

= 25°C

T

V

(V)

5.0

5.0

5.0

5.0

CC

(*)

(*)

(*)

(*)

VIC=V

V

I/O=VCC

I

I/O

VIC=V

V

I/O=VCC

I

I/O

IH

to GND

≤ 1mA

IH

or GND

≤ 1mA

A

Min. Typ. Max. Min. Max. Min. Max.

222V

12 17 20 24 V

10 14 18 20 V

5.5 VOS=VCCto GND
V

IS=VCC

V

IC=VIL

to GND

5.5

to GND

V

IC=VIH

= 5.5V or GND

or GND

± 0.1 ± 1.0 ± 1.0 µA

0to

5.5

5.5

V

OS=VCC

V

IC

V

I=VCC

74V2T66

-40 to 85°C -55 to 125°C

0.8 0.8 0.8 V

±0.1 ± 1 ± 1 µA

±0.1 ± 1 ± 5 µA

11020µA

Unit

AC ELECTRICAL CHARACTERISTICS (CL= 50pF, Input tr=tf= 3ns)

Test Condition Value

= 25°C

Symbol Parameter

t

t

PLZ

t

PHZ

t

PZL

t

PZH

(*) Voltage range is5.0V ± 0.5V

PD

Delay Time

Output Disable
Time

Output Enable
Time

V

(V)

5.0

5.0

5.0

CC

(*)

(*)

(*)

RL= 500 Ω

RL=1KΩ

T

A

Min. Typ. Max. Min. Max. Min. Max.

0.6 0.7 1.0 2.0 ns

6.0 7.5 9.0 10.0 ns

2.5 4.0 5.0 7.0 ns

-40 to 85°C -55 to 125°C

Unit

3/9

74V2T66

CAPACITIVE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

C

Input Capacitance

IN

Output

I/O

Capacitance
Power Dissipation

PD

Capacitance

410 10 10pF

10 pF

3pF

(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

ANALOG SWITCH CHARACTERISTICS (GND = 0V; TA= 25°C)

Test Condition Value

Symbol Parameter

Sine Wave
Distortion (THD)

MAX

Frequency
Response

f

(Switch ON)
Feedthrough

Attenuation
(Switch OFF)

Crosstalk (Control
Input to Signal
Output)

CrosstalkBetween
Switches

(*) Voltage range is 5.0V ± 0.5V

5.0(*) 4

5.0(*) Adjust fINvoltage to obtain 0 dBm at VOS.

5.0(*) V

5.0(*) R

5.0(*) R

V

(V)

CC

(V

V

p-p

IN

)

=1KHzRL=10KΩ,CL=50pF

f

IN

Increase f

Adjust f

Frequency until dB meter reads -3dB

IN

=50Ω,CL=10pF

R

L

is centered at VCC/2

IN

Voltage to obtained 0dBm at V

IN

RL= 600Ω,CL=50pF,fIN= 1MHz sine wave

= 600Ω,CL=50pF,fIN= 1MHz square wave

L

tr=tf= 2.0ns

= 600Ω,CL=50pF,fIN= 1MHz sine wave -60 dB

L

-40 to 85°C -55 to 125°C

CC(opr)=CPDxVCCxfIN+ICC

Typ.

0.04 %

180 MHz

IS

Unit

/2(per switch)

Unit

-60 dB

60 mV

4/9

SWITCHINGCARACTERISTICSTESTCIRCUIT

74V2T66

FEEDTHROUGH ATTENUATION

BANDWIDTH ATTENUATION

MAXIMUM CONTROL FREQUENCY

CROSSTALK (control to output

5/9

74V2T66

CHANNEL RESISTANCE (R

ON)

ICC(Opr.)

6/9

74V2T66

SOT23-8L MECHANICAL DATA

mm. mils

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 0.90 1.45 35.4 57.1

A1 0.00 0.15 0.0 5.9

A2 0.90 1.30 35.4 51.2

b 0.22 0.38 8.6 14.9

C 0.09 0.20 3.5 7.8

D 2.80 3.00 110.2 118.1

E 2.60 3.00 102.3 118.1

E1 1.50 1.75 59.0 68.8

e0.65 25.6

e1 1.95 76.7

L 0.35 0.55 13.7 21.6

7/9

74V2T66

Tape & Reel SOT23-xL MECHANICAL DATA

DIM.

MIN. TYP MAX. MIN. TYP. MAX.

A 180 7.086
C 12.8 13.0 13.2 0.504 0.512 0.519
D 20.2 0.795
N 60 2.362

T 14.4 0.567
Ao 3.13 3.23 3.33 0.123 0.127 0.131
Bo 3.07 3.17 3.27 0.120 0.124 0.128
Ko 1.27 1.37 1.47 0.050 0.054 0.0.58
Po 3.9 4.0 4.1 0.153 0.157 0.161

P 3.9 4.0 4.1 0.153 0.157 0.161

mm. inch

8/9

74V2T66

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the
consequences of use of such informatio n nor for any infringement of paten ts or o ther rig hts of t hird part ies which ma y result from
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information
previousl y suppl ied. STM icroel ectronics produc ts are not auth orized for use as c ritica l compone nts in l ife s upport dev ices or
systems without express written approval of STMicroelectronics.

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