ST 74V2T32 User Manual
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74V2T32
DUAL 2-INPUT OR GATE
■ HIGH SPEED:t
■ LOW POWER DISSIPATION:
I
=1µA(MAX.) at TA=25°C
CC
■ COMPATIBLE WITH TTL OUTPUTS:
V
=2V(MIN),VIL=0.8V(MAX)
IH
■ POWER DOWN PROTECTION ON INPUTS
= 4.6ns (TYP.) at VCC=5V
PD
SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL=8mA(MIN)
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
PHL
■ OPERATING VOLTAGE RANGE:
(OPR) = 4.5V to 5.5V
V
CC
■ IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V2T32 is an advanced high-speed CMOS
DUAL 2-INPUT OR GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
The internal circuit is composed of 3 stages
including buffer ou tput, which provide high noise
immunity and stable output.
SOT23-8L
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2T32STR
Power down protection is provided on all inputs
and outpu ts and 0 t o 7V can be accepted on
inputs with no regard to the supply voltage.
This device can be used to interface 5V to 3V
systems and it is ideal for port able applications
like personal digital assistant and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits against static discharge, givi ng
them ESD immunity and transient e xcess voltage.
PIN CO NNE CTION AND IEC LOGIC SYMBOLS
1/7March 2004
74V2T32
INPUT EQUIVALENT CIRCUIT PIN DES CRIPTION
PIN N° SYMBOL NAME QND FUNCTION
1, 5 1A, 2A Data Input
2, 6 1B, 2B Data Input
7, 3 1Y, 2Y Data Output
4 GND Ground (0V)
8
TRUTH TABLE
nA nB nY
LLL
LHH
HLH
HHH
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is
not implied
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC+0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
V
CC
Positive Supply Voltage
-0.5 to +7.0 V
-0.5 to +7.0 V
-20 mA
± 20 mA
± 25 mA
± 50 mA
-65 to +150 °C
300 °C
V
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) VINfrom 0.8V to 2V
2/7
Supply Voltage
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) (V
=5.0± 0.5V)
CC
4.5 to 5.5 V
0to5.5 V
CC
-55 to 125 °C
0 to 20 ns/V
V
DC SPECIFICATIONS
Symbol Parameter
V
V
V
+I
I
High Level Input
IH
Voltage
V
Low Level Input
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
I
Input Leakage
I
Current
I
Quiescent Supply
CC
Current
Additional Worst
CC
Case Supply
Current
Output Leakage
OPD
Current
Test Condition Value
T
= 25°C
V
CC
(V)
4.5to
A
Min. Typ. Max. Min. Max. Min. Max.
222V
5.5
4.5to
5.5
4.5
4.5
4.5
4.5
0to
5.5
5.5
IO=-50 µA 4.4 4.5 4.4 4.4 V
=-8 mA 3.94 3.8 3.7
I
O
IO=50 µA 0.0 0.1 0.1 0.1 V
I
=8 mA 0.36 0.44 0.55
O
VI=5.5VorGND
V
I=VCC
or GND
One Input at 3.4V,
other input at V
5.5
CC
or GND
=5.5V
0
V
OUT
74V2T32
-40 to 85°C -55 to 125°C
0.8 0.8 0.8 V
± 0.1 ± 1.0 ± 1.0 µA
11020µA
1.35 1.5 1.5 mA
0.5 5.0 5.0 µA
Unit
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
Test Condition Value
Symbol Parameter
t
t
(*) Voltage range is 5.0V± 0.5V
Propagation Delay
PLH
Time
PHL
T
V
CC
(V)
C
(pF)
L
A
Min. Typ. Max. Min. Max. Min. Max.
5.0 (*) 15 4.6 7.0 1.0 8.0 1.0 9.0
5.0 (*) 50 5.1 7.5 1.0 8.5 1.0 9.5
-40 to 85°C -55 to 125°C
Unit
ns
= 25°C
CAPACITANCE CHARACTERISTICS
Test Condition Value
= 25°C
Symbol Parameter
T
A
Min. Typ. Max. Min. Max. Min. Max.
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
410 10 10pF
12 pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
-40 to 85°C -55 to 125°C
/2
Unit
3/7
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