ST 74V2T32 User Manual

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74V2T32

DUAL 2-INPUT OR GATE

■ HIGH SPEED:t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) at TA=25°C

CC

■ COMPATIBLE WITH TTL OUTPUTS:

V

=2V(MIN),VIL=0.8V(MAX)

IH

■ POWER DOWN PROTECTION ON INPUTS

= 4.6ns (TYP.) at VCC=5V

PD

SYMMETRICAL OUTPUT IMPEDANCE: |I

|=IOL=8mA(MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANGE:

(OPR) = 4.5V to 5.5V

V

CC

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2T32 is an advanced high-speed CMOS DUAL 2-INPUT OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C

2

MOS technology.

The internal circuit is composed of 3 stages including buffer ou tput, which provide high noise immunity and stable output.

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2T32STR

Power down protection is provided on all inputs and outpu ts and 0 t o 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V systems and it is ideal for port able applications like personal digital assistant and all battery-powered equipment. All inputs and outputs are equipped with protection circuits against static discharge, givi ng them ESD immunity and transient e xcess voltage.

PIN CO NNE CTION AND IEC LOGIC SYMBOLS

1/7March 2004

74V2T32

INPUT EQUIVALENT CIRCUIT PIN DES CRIPTION

PIN N° SYMBOL NAME QND FUNCTION

1, 5 1A, 2A Data Input 2, 6 1B, 2B Data Input 7, 3 1Y, 2Y Data Output

4 GND Ground (0V) 8

TRUTH TABLE

nA nB nY

LLL

LHH HLH HHH

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

OK

I

or I

CC

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is not implied

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC+0.5

O

DC Input Diode Current

IK

DC Output Diode Current DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

V

CC

Positive Supply Voltage

-0.5 to +7.0 V

-20 mA

± 20 mA ± 25 mA ± 50 mA

-65 to +150 °C 300 °C

V

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V V T

dt/dv

1) VINfrom 0.8V to 2V

2/7

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V

=5.0± 0.5V)

CC

4.5 to 5.5 V 0to5.5 V

CC

-55 to 125 °C 0 to 20 ns/V

V

DC SPECIFICATIONS

Symbol Parameter

V

+I

I

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage High Level Output

OH

Voltage Low Level Output

OL

Voltage

I

Input Leakage

I

Current

I

Quiescent Supply

CC

Current Additional Worst

CC

Case Supply Current

Output Leakage

OPD

Current

Test Condition Value

T

= 25°C

V

CC

(V)

4.5to

A

Min. Typ. Max. Min. Max. Min. Max.

222V

5.5

4.5to

5.5

4.5

0to

5.5

IO=-50 µA 4.4 4.5 4.4 4.4 V

=-8 mA 3.94 3.8 3.7

I

O

IO=50 µA 0.0 0.1 0.1 0.1 V

I

=8 mA 0.36 0.44 0.55

O

VI=5.5VorGND

V

I=VCC

or GND

One Input at 3.4V, other input at V

5.5

CC

or GND

=5.5V

0

V

OUT

74V2T32

-40 to 85°C -55 to 125°C

0.8 0.8 0.8 V

± 0.1 ± 1.0 ± 1.0 µA

11020µA

1.35 1.5 1.5 mA

0.5 5.0 5.0 µA

Unit

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

Test Condition Value

Symbol Parameter

t t

(*) Voltage range is 5.0V± 0.5V

Propagation Delay

PLH

Time

PHL

T

V

CC

(V)

C

(pF)

L

A

Min. Typ. Max. Min. Max. Min. Max.

5.0 (*) 15 4.6 7.0 1.0 8.0 1.0 9.0

5.0 (*) 50 5.1 7.5 1.0 8.5 1.0 9.5

-40 to 85°C -55 to 125°C

Unit

ns

= 25°C

CAPACITANCE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance

410 10 10pF

12 pF

(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load. (Refer to Test Circuit). Average current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

-40 to 85°C -55 to 125°C

/2

Unit

3/7