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74V2T241

DUAL BUS BUFFER NON INVERTED (3-STATE)

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) atTA=25°C

CC

■ POWER DOWN PROT ECTION ON INPUTS

= 3.8ns (TYP.) at VCC=5V

PD

AND OUTPUTS

■ COMPATIBLE WITHTTL LEVEL:

V

=2.0V(MIN), VIL=0.8V(MAX)

IH

■ SYMMETRICAL O UTPUT IMPEDANCE:

|I

|=IOL=8mA(MIN)atVCC=4.5V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANG E:

V

(OPR) = 4.5V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2T241 is an advanced high-speed CMOS
DUAL BUS BUFFER NON INVERTER fabricated
with sub-micron silicon gate and double-layer
metal wiring C

2

MOS technology.
It has one active-high and one active-low output
enable. Power down protection is provided o n all

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2T241STR

inputs and outputs and 0 to 7V can be accepted
on inputs with no reg ard to the supply voltage.
This de vice can be used to interface 5V t o 3V
systems and it is idea l for portable applications
like personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/8June 2003

74V2T241

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN N° SYMBOL NAME AND FUNCTION

1, 7 1G
2, 5 1A, 2A Data Inputs
3, 6 2Y, 1Y Data Outputs

4 GND Ground (0V)
8

TRUTH TABLE

V

, 2G Output Enable Inputs

CC

Positive Supply Voltage

1G

2G A Y

LHL L
LHHH

HLXZ

X: "H" or "L"
Z: HighImpedance

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V
V
V

I

I

OK

I

or I

I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

1) V

CC

2) Highor Low State

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage (see note 1)

O

DC Output Voltage (see note 2) -0.5 to VCC+ 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

=0V or nG=VCC(Output in High Impedance state)

-0.5 to +7.0 V

-0.5 to +7.0 V

-0.5 to +7.0 V
V

− 20 mA

− 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

260 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V
V
V
T

dt/dv

1) VCC=0V or Output in High Impedance state

2) Highor Low State

3) VINfrom0.8 to 2.0V

2/8

Supply Voltage

CC

Input Voltage

I

Output Voltage (see note 1)

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 3) (V

= 5.0 ± 0.5V)

CC

4.5 to 5.5 V
0 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 20 ns/V

V

DC SPECIFICATIONS

Symbol Parameter

V

V

V

I

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage
High Level Output

OH

Voltage
Low Level Output

OL

Voltage
High Impedance

I

OZ

Output Leakage
Current

Input Leakage

I

I

Current
Power downOutput

OPD

Leakage Current
Quiescent Supply

I

CC

Current

Test Condition Value

= 25°C

T

V

CC

(V)

4.5to

5.5

A

Min. Typ. Max. Min. Max. Min. Max.

0.8 0.8 0.8 V

4.5to

5.5

4.5

4.5

4.5

4.5

5.5

0to

5.5
0

5.5

IO=-50 µA

=-8 mA

I

O

IO=50 µA

=8 mA

I

O

I=VIH

or V

IL

V

VO= 5.5 or GND

V

= 5.5V or GND

I

= 5.5

V

O

V

I=VCC

or GND

4.4 4.5 4.4 4.4

3.94 3.8 3.7

0.0 0.1 0.1 0.1 V

±0.25 ± 2.5 ± 2.5 µA

74V2T241

-40 to 85°C -55 to 125°C

2.0 2.0 2.0 V

0.36 0.44 0.44

± 0.1 ± 1 ± 1 µA

0.5 5 10 µA

11010µA

Unit

V

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

Test Condition Value

= 25°C

Symbol Parameter

t
t

t
t

t
t

(**) Voltage range is 5.0V ± 0.5V

Propagation Delay

PLH

Time

PHL

Output Disable

PLZ

Time

PHZ

Output Enable

PZL

Time

PZH

V

5.0

5.0

5.0

5.0

5.0

5.0

C

CC

(V)

L

(pF)

(**)

15 3.8 5.5 1.0 6.5 1.0 7.5

(**)

50 4.3 6.5 1.0 7.5 1.0 8.5

(**)
(**)
(**)
(**)

15
50
15
50

R

L

R

L

R

L

R

L

=1KΩ
=1KΩ
=1KΩ
=1KΩ

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

3.6 5.0 1.0 6.0 1.0 7.0

5.1 7.0 1.0 8.0 1.0 9.0

3.7 5.9 1.0 7.0 1.0 8.0

4.1 6.5 1.0 7.5 1.0 8.5

Unit

ns

ns

ns

CAPACITIVE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

C

Input Capacitance

IN

Output

OUT

Capacitance
Power Dissipation

PD

Capacitance

410 10 10pF
6pF

14 pF

(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

-40 to 85°C -55 to 125°C

/2

Unit

3/8