ST 74V2T125 User Manual
查询74V2T125供应商
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
= 1µA(MAX.) at TA=25°C
CC
■ COMPATIBLE WITH TTL OUTPUTS:
V
= 2V (MIN), VIL = 0.8V (MAX)
IH
■ POWER DOWN PROTECTION ON INPUT S
AND OUTPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
| = IOL = 8mA (MIN)
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
■ OPERATING VOL TAGE RANGE:
V
CC
■ IMPROVED LATCH-UP IMMUNITY
PHL
(OPR) = 4.5V to 5.5V
= 3.8ns (TYP.) at VCC = 5V
PD
74V2T125
DUAL BUS BUFFE R ( 3 -STATE )
PRELIMINARY DATA
SOT23-8L SOT323-8L
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2T125STR
SOT323-8L 74V2T125CTR
DESCRIPTION
The 74V2T125 is an advanced high-speed CMOS
DUAL BUS BUFFER fabricated with sub-micron
silicon gate and double-layer metal wiring C2MOS
tecnology.
3-STATE control input nG
has to be set HIGH to
place the output into the high impedance state.
Power down protection is provided on all inputs
and outputs and 0 to 7V can be accepted on
PIN CONNECTION AND IEC LOGIC SYMBOLS
inputs with no regard to the supply voltage. This
device can be used to interface 3V to 5V systems
and it is ideal for portable applications like
personal digital assistant, camcorder and all
battery-powered equipment.
All inputs and outputs are equipped with
protection circuits against stat ic discharge, giving
them ESD immunity and transient excess voltage.
1/10December 2001
This is preliminary information on a new product now in development are or undergoing evaluation. Details subject to change without notice.
74V2T125
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN No SYMBOL NAME AND FUNCTION
1, 7 1G
2, 5 1A, 2A Data Inputs
3, 6 2Y, 1Y Data Outputs
4 GND Ground (0V)
8
TRUTH TABLE
, 2G Output Enable Inputs
V
CC
Positive Supply Voltage
AG
Y
XHZ
LLL
HLH
X: "H" or "L"
Z: High Impedance
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
OK
I
I
or I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC + 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCC or Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
-0.5 to +7.0 V
-0.5 to +7.0 V
V
− 20 mA
− 20 mA
± 25 mA
± 50 mA
-65 to +150 °C
260 °C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) VIN from 0.8V to 2V
Supply Voltage
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) (V
= 5.0 ± 0.5V)
CC
4.5 to 5.5 V
0 to 5.5 V
CC
-55 to 125 °C
0 to 20 ns/V
2/10
V
DC SPECIFICATION
Symbol Parameter
V
V
V
V
I
I
OPD
I
High Level Input
IH
Voltage
Low Level Input
IL
Voltage
High Level Ouput
OH
Voltage
Low Level Output
OL
Voltage
High Impedance
OZ
Output Leakage
Current
I
Input Leakage
I
Current
Power down Output
Leakage Current
Quiescent Supply
CC
Current
I
Additional Worst
CC
Case Supply
Current
Test Condition Value
T
= 25°C
V
CC
(V)
4.5 to
5.5
A
Min. Typ. Max. Min. Max. Min. Max.
0.8 0.8 0.8 V
4.5 to
5.5
4.5
4.5
4.5
4.5
5.5
0 to
5.5
0
5.5
IO=-50 µA
I
=-8 mA
O
IO=50 µA
=8 mA
I
O
= VIH or V
V
I
IL
VO = 5.5 or GND
V
= 5.5V or GND
I
= 5.5
V
O
V
= VCC or GND
I
4.4 4.5 4.4 4.4
3.94 3.8 3.7
0.0 0.1 0.1 0.1
One Input at 3.4V,
other input at V
5.5
CC
or GND
74V2T125
-40 to 85°C -55 to 125°C
2.0 2.0 2.0
0.36 0.44 0.55
±0.25 ± 2.5 ± 5 µA
± 0.1 ± 1 ± 1 µA
0.5 5 10 µA
11020µA
1.35 1.5 1.5 mA
Unit
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
Test Condition Value
Symbol Parameter
t
Propagation Delay
PLH
PHL
PLZ
PHZ
PZL
PZH
Time
Output Disable
Time
Output Enable
Time
t
t
t
t
t
(*) Vol tage range is 5.0V ± 0.5V
5.0
5.0
5.0
5.0
5.0
5.0
C
V
CC
(V)
L
(pF)
(*)
15 3.8 5.5 1.0 6.5 1.0 7.5
(*)
50 4.3 6.5 1.0 7.5 1.0 8.5
(*)
(*)
(*)
(*)
15
50
15
50
R
= 1 KΩ
L
R
= 1 KΩ
L
R
= 1 KΩ
L
R
= 1 KΩ
L
= tf = 3ns)
r
T
= 25°C
A
-40 to 85°C -55 to 125°C
Min. Typ. Max. Min. Max. Min. Max.
3.6 5.0 1.0 6.0 1.0 7.0
5.1 7.0 1.0 8.0 1.0 9.0
3.7 5.9 1.0 7.0 1.0 8.0
4.1 6.5 1.0 7.5 1.0 8.5
Unit
ns
3/10
74V2T125
CAPACITIVE CHARACTERISTICS
Test Condition Value
= 25°C
Symbol Parameter
T
A
Min. Typ. Max. Min. Max. Min. Max.
C
C
C
Input Capacitance
IN
Output
OUT
Capacitance
Power Dissipation
PD
Capacitance
4101010pF
6pF
14 pF
(note 1)
1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (R efer to Test Ci rcuit). Average current can be ob tained by the following equation. I
CC(opr)
TEST CIRCUIT TEST CIRCUIT
-40 to 85°C -55 to 125°C
= CPD x VCC x fIN + ICC/2
Unit
TEST SWITCH
t
, t
PLH
PHL
, t
t
PZL
PLZ
t
, t
PZH
PHZ
CL =15/50pF or equivalent (i ncludes jig and probe capacitance)
R1 = 1KΩ or equivalent
= Z
R
of pulse generator (typically 50Ω)
T
OUT
4/10
Open
V
CC
GND
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