ST 74V2T125 User Manual

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■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

= 1µA(MAX.) at TA=25°C

CC

■ COMPATIBLE WITH TTL OUTPUTS:

V

= 2V (MIN), VIL = 0.8V (MAX)

IH

■ POWER DOWN PROTECTION ON INPUT S

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

| = IOL = 8mA (MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOL TAGE RANGE:

V

CC

■ IMPROVED LATCH-UP IMMUNITY

PHL

(OPR) = 4.5V to 5.5V

= 3.8ns (TYP.) at VCC = 5V

PD

74V2T125

DUAL BUS BUFFE R ( 3 -STATE )

PRELIMINARY DATA

SOT23-8L SOT323-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2T125STR

SOT323-8L 74V2T125CTR

DESCRIPTION

The 74V2T125 is an advanced high-speed CMOS DUAL BUS BUFFER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS tecnology. 3-STATE control input nG

has to be set HIGH to place the output into the high impedance state. Power down protection is provided on all inputs and outputs and 0 to 7V can be accepted on

PIN CONNECTION AND IEC LOGIC SYMBOLS

inputs with no regard to the supply voltage. This device can be used to interface 3V to 5V systems and it is ideal for portable applications like personal digital assistant, camcorder and all battery-powered equipment. All inputs and outputs are equipped with protection circuits against stat ic discharge, giving them ESD immunity and transient excess voltage.

1/10December 2001

This is preliminary information on a new product now in development are or undergoing evaluation. Details subject to change without notice.

74V2T125

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME AND FUNCTION

1, 7 1G 2, 5 1A, 2A Data Inputs 3, 6 2Y, 1Y Data Outputs

4 GND Ground (0V) 8

TRUTH TABLE

, 2G Output Enable Inputs

V

CC

Positive Supply Voltage

AG

Y

XHZ

LLL

HLH

X: "H" or "L" Z: High Impedance

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

I

OK

I

or I

CC

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC + 0.5

O

DC Input Diode Current

IK

DC Output Diode Current DC Output Current

O

DC VCC or Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

-0.5 to +7.0 V

-0.5 to +7.0 V V

− 20 mA

− 20 mA ± 25 mA ± 50 mA

-65 to +150 °C

260 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

T

dt/dv

1) VIN from 0.8V to 2V

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V

= 5.0 ± 0.5V)

CC

4.5 to 5.5 V 0 to 5.5 V

CC

-55 to 125 °C 0 to 20 ns/V

2/10

V

DC SPECIFICATION

Symbol Parameter

V

I

OPD

I



High Level Input

IH

Voltage Low Level Input

IL

Voltage High Level Ouput

OH

Voltage Low Level Output

OL

Voltage High Impedance

OZ

Output Leakage Current

I

Input Leakage

I

Current Power down Output

Leakage Current Quiescent Supply

CC

Current

I

Additional Worst

CC

Case Supply Current

Test Condition Value

T

= 25°C

V

CC

(V)

4.5 to

5.5

A

Min. Typ. Max. Min. Max. Min. Max.

0.8 0.8 0.8 V

4.5 to

5.5

4.5

5.5

0 to

5.5 0

5.5

IO=-50 µA

I

=-8 mA

O

IO=50 µA

=8 mA

I

O

= VIH or V

V

I

IL

VO = 5.5 or GND

V

= 5.5V or GND

I

= 5.5

V

O

V

= VCC or GND

I

4.4 4.5 4.4 4.4

3.94 3.8 3.7

0.0 0.1 0.1 0.1

One Input at 3.4V, other input at V

5.5

CC

or GND

74V2T125

-40 to 85°C -55 to 125°C

2.0 2.0 2.0

0.36 0.44 0.55

±0.25 ± 2.5 ± 5 µA

± 0.1 ± 1 ± 1 µA

0.5 5 10 µA

11020µA

1.35 1.5 1.5 mA

Unit

V

AC ELECTRICAL CHARACTERISTICS (Input t

Test Condition Value

Symbol Parameter

t

Propagation Delay

PLH PHL

PLZ PHZ

PZL PZH

Time Output Disable

Time

Output Enable Time

t t

t

(*) Vol tage range is 5.0V ± 0.5V

5.0

C

V

CC

(V)

L

(pF)

(*)

15 3.8 5.5 1.0 6.5 1.0 7.5

(*)

50 4.3 6.5 1.0 7.5 1.0 8.5

(*) (*) (*) (*)

15 50 15 50

R

= 1 KΩ

L

R

= 1 KΩ

L

R

= 1 KΩ

L

R

= 1 KΩ

L

= tf = 3ns)

r

T

= 25°C

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

3.6 5.0 1.0 6.0 1.0 7.0

5.1 7.0 1.0 8.0 1.0 9.0

3.7 5.9 1.0 7.0 1.0 8.0

4.1 6.5 1.0 7.5 1.0 8.5

Unit

ns

3/10

74V2T125

CAPACITIVE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

Input Capacitance

IN

Output

OUT

Capacitance Power Dissipation

PD

Capacitance

4101010pF 6pF

14 pF

(note 1)

1) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without

load. (R efer to Test Ci rcuit). Average current can be ob tained by the following equation. I

CC(opr)

TEST CIRCUIT TEST CIRCUIT

-40 to 85°C -55 to 125°C

= CPD x VCC x fIN + ICC/2

Unit

TEST SWITCH

t

, t

PLH

PHL

, t

t

PZL

PLZ

t

, t

PZH

PHZ

CL =15/50pF or equivalent (i ncludes jig and probe capacitance) R1 = 1KΩ or equivalent

= Z

R

of pulse generator (typically 50Ω)

T

OUT

4/10

Open

V

CC

GND