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74V2T08
DUAL 2-INPUT AND GATE
■ HIGH SPEED: t
■ LOW POWER DISSIPATION:
I
=1µA(MAX.) atTA=25°C
CC
■ COMPATIBLE WITHTTL OUTPUTS
V
=2V(MIN),VIL=0.8V(MAX)
IH
■ POWER DOWN PROT ECTION ON INPUTS
■ SYMMETRICAL OUTPUT IMPEDANCE:
|I
|=IOL=8mA(MIN)atVCC=4.5V
OH
■ BALANCED PROPAGATION DELAYS:
t
≅ t
PLH
PHL
■ OPERATING VOLTAGE RANG E:
V
(OPR) = 4.5V to 5.5V
CC
■ IMPROVED LATCH-UP IMMUNITY
= 3.8ns (TYP.) at VCC=5V
PD
DESCRIPTION
The 74V2T08 is an advanced high-speed CMOS
DUAL 2-INPUT AND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C
2
MOS technology.
SOT23-8L
ORDER CODES
PACKAGE T & R
SOT23-8L 74V2T08STR
The internal circuit i s composed of 2 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and outpu ts and 0 t o 7V can be accepted on
inputs with no regard to the s upply voltage.
This device can be used t o interface 5V to 3V.
PIN CONNECTION AND IEC LOGIC SYMBOLS
1/7June 2003
74V2T08
INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION
PIN N° SYMBOL NAME QND FUNCTION
1, 5 1A, 2A Data Input
2, 6 1B, 2B Data Input
7, 3 1Y, 2Y Data Output
4 GND Ground (0V)
8
TRUTH TABLE
nA nB nY
LLL
LHL
HLL
HHH
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter² Value Unit
V
V
V
I
I
OK
I
or I
I
CC
T
T
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied
Supply Voltage
CC
DC Input Voltage
I
DC Output Voltage -0.5 to VCC+ 0.5
O
DC Input Diode Current
IK
DC Output Diode Current
DC Output Current
O
DC VCCor Ground Current
GND
Storage Temperature
stg
Lead Temperature (10 sec)
L
V
CC
Positive Supply Voltage
-0.5 to +7.0 V
-0.5 to +7.0 V
-20 mA
± 20 mA
± 25 mA
± 50 mA
-65 to +150 °C
260 °C
V
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Value Unit
V
V
V
T
dt/dv
1) VINfrom0.8 to 2V
2/7
Supply Voltage
CC
Input Voltage
I
Output Voltage 0 to V
O
Operating Temperature
op
Input Rise and Fall Time (note 1) (V
=5.0±0.5V)
CC
4.5 to 5.5 V
0 to 5.5 V
CC
-55 to 125 °C
0 to 20 ns/V
V
DC SPECIFICATION
Symbol Parameter
V
V
V
∆I
High Level Input
IH
Voltage
Low Level Input
V
IL
Voltage
High Level Output
OH
Voltage
Low Level Output
OL
Voltage
Input Leakage
I
I
Current
Quiescent Supply
I
CC
Current
Additional Worst
CC
Case Supply
Current
Test Condition Value
= 25°C
T
V
CC
(V)
4.5to
A
Min. Typ. Max. Min. Max. Min. Max.
222
5.5
4.5to
5.5
4.5
4.5
4.5
4.5
0to
5.5
5.5
IO=-50 µA
=-8 mA
I
O
IO=50 µA
=8 mA
I
O
VI= 5.5V or GND
V
I=VCC
or GND
4.4 4.5 4.4 4.4
3.94 3.8 3.7
0.0 0.1 0.1 0.1
One Input at 3.4V,
other input at V
5.5
CC
or GND
74V2T08
-40 to 85°C -55 to 125°C
0.8 0.8 0.8
0.36 0.44 0.55
± 0.1 ± 1 ± 1 µA
11020µA
1.35 1.5 1.5 mA
Unit
V
V
V
V
AC ELECTRICAL CHARACTERISTICS (Input t
r=tf
=3ns)
Test Condition Value
Symbol Parameter
t
PLHtPHL
(*) Voltage range is3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V
Propagation Delay
Time
V
5.0
5.0
T
C
CC
(V)
L
(pF)
(**)
15 3.8 5.5 1.0 6.5 1.0 7.5
(**)
50 4.3 6.5 1.0 7.5 1.0 8.5
A
Min. Typ. Max. Min. Max. Min. Max.
-40 to 85°C -55 to 125°C
Unit
ns
= 25°C
CAPACITANCE CHARACTERISTICS
Test Condition Value
= 25°C
Symbol Parameter
T
A
Min. Typ. Max. Min. Max. Min. Max.
C
C
Input Capacitance
IN
Power Dissipation
PD
Capacitance
410 10 10pF
19 pF
(note 1)
1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I
CC(opr)=CPDxVCCxfIN+ICC
-40 to 85°C -55 to 125°C
/2
Unit
3/7
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