ST 74V2T03 User Manual

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74V2T03

DUAL 2-INPUT OPEN DRAIN NAND GATE

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) atTA=25°C

CC

■ COMPATIBLE WITHTTL OUTPUTS:

V

=2V(MIN),VIL=0.8V(MAX)

IH

■ POWER DOWN PROT ECTION ON INPUTS

■ OPERATING VOLTAGE RANGE:

V

(OPR) = 4.5V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

= 5.4ns (TYP.) at VCC=5V

PD

DESCRIPTION

The 74V2T03 is an advanced high-speed CMOS
DUAL 2-INPUT OPEN DRAIN NAND GA TE
fabricated with sub-micron silicon gate and
double-layer metal wiring C

2

MOS technology.
The internal circuit is composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
The device can, with an external pull-up resistor,
be used in wired AND configuration. This device

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2T03STR

can also be used as a led driver in any other
application requiring current sink.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inp uts with no
regard to the supply voltage. This device can be
usedto interface 5V to 3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/7June 2003

74V2T03

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN N° SYMBOL NAME QND FUNCTION

1, 5 1A, 2A Data Input
2, 6 1B, 2B Data Input
7, 3 1Y, 2Y Data Output

4 GND Ground (0V)
8

TRUTH TABLE

ABY

LLZ

LHZ
HLZ
HHL

Z: HighImpedance State

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

or I

I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC+ 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

V

CC

Positive Supply Voltage

-0.5 to +7.0 V

-0.5 to +7.0 V

-20 mA

± 20 mA
+ 25 mA
± 50 mA

-65 to +150 °C
260 °C

V

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V

V

T

dt/dv

1) VINfrom0.8V to 2V

2/7

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V

=5.0±0.5V)

CC

4.5 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 20 ns/V

V

DC SPECIFICATIONS

Symbol Parameter

V

V

∆I

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage
Low Level Output

OL

Voltage
High Impedance

I

OZ

Output Leakage
Current

Input Leakage

I

I

Current
Quiescent Supply

I

CC

Current
Additional Worst

CC

Case Supply
Current

Test Condition Value

= 25°C

T

V

CC

(V)

4.5to

A

Min. Typ. Max. Min. Max. Min. Max.

222V

5.5

4.5to

5.5

4.5

4.5

5.5

0to

5.5

5.5

IO=50 µA 0.0 0.1 0.1 0.1 V

=8 mA 0.36 0.44 0.55

I

O

VI=VIHor V

IL

VO=VCCor GND

VI= 5.5V or GND

V

I=VCC

or GND

One Input at 3.4V,
other input at V

5.5

CC

or GND

74V2T03

-40 to 85°C -55 to 125°C

0.8 0.8 0.8 V

±0.25 ± 2.5 ± 5.0 µA

± 0.1 ± 1.0 ± 1.0 µA

11020µA

1.35 1.5 1.5 mA

Unit

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

Test Condition Value

Symbol Parameter

t

t

(*) Voltage range is5.0V ± 0.5V

Enable Delay Time

PZL

Disable Delay Time

PLZ

T

V

CC

(V)

C

(pF)

L

A

Min. Typ. Max. Min. Max. Min. Max.

5.0 (*) 15 3.7 7.0 1.0 8.0 1.0 9.0

5.0 (*) 50 4.1 8.0 1.0 9.0 1.0 10.0

5.0 (*) 15 5.4 7.0 1.0 8.0 1.0 9.0

5.0 (*) 50 5.9 8.0 1.0 9.0 1.0 10.0

-40 to 85°C -55 to 125°C

Unit

ns

ns

= 25°C

CAPACITIVE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

C

Input Capacitance

IN

Output

OUT

Capacitance
Power Dissipation

PD

Capacitance

410 10 10pF
510 10 10pF

6pF

(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

-40 to 85°C -55 to 125°C

CC(opr)=CPDxVCCxfIN+ICC

Unit

/2

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