ST 74V2T00 User Manual

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74V2T00

DUAL 2-INPUT NAND GATE

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) at TA=25°C

CC

■ COMPATIBLE WITHTTL OUTPUTS:

V

=2V(MIN),VIL=0.8V(MAX)

IH

■ POWER DOWN PROTECTION ON INPUTS

= 5ns (TYP.) at VCC=5V

PD

SYMMETRICAL OUTPUT IMPEDANCE:
|I

|=IOL=8mA(MIN)

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANGE:

V

(OPR) = 4.5V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2T00 is an advanced high-speed CMOS
DUAL 2-INPUT NAND GATE fabricated with
sub-micron silicon gate and double-layer metal
wiring C

2

MOS technology.

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2T00STR

The internal circuit i s composed of 3 stages
including buffer output, which provide high noise
immunity and stable output.
Power down protection is provided on all inputs
and 0 to 7V can be accepted on inputs with no
regard to the supply voltage. This device can be
usedto interface 5V to 3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/7June 2003

74V2T00

INPUT AND OUTPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN N° SYMBOL NAME QND FUNCTION

1, 5 1A, 2A Data Input
2, 6 1B, 2B Data Input
7, 3 1Y, 2Y Data Output

4 GND Ground (0V)
8

TRUTH TABLE

ABY

LLH

LHH
HLH
HHL

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

or I

I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition is
not implied

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC+ 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

V

CC

Positive Supply Voltage

-0.5 to +7.0 V

-0.5 to +7.0 V

-20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C
300 °C

V

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V
V
T

dt/dv

1) VINfrom0.8V to 2V

2/7

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 1) (V

=5.0±0.5V)

CC

4.5 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C
0 to 20 ns/V

V

DC SPECIFICATION

Symbol Parameter

V

V

V

∆I

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage
High Level Output

OH

Voltage
Low Level Output

OL

Voltage
Input Leakage

I

I

Current
Quiescent Supply

I

CC

Current
Additional Worst

CC

Case Supply
Current

Test Condition Value

= 25°C

T

V

CC

(V)

4.5to

A

Min. Typ. Max. Min. Max. Min. Max.

222V

5.5

4.5to

5.5

4.5

4.5

4.5

4.5

0to

5.5

5.5

IO=-50 µA 4.4 4.5 4.4 4.4 V

=-8 mA 3.94 3.8 3.7

I

O

IO=50 µA 0.0 0.1 0.1 0.1 V

=8 mA 0.36 0.44 0.55

I

O

VI= 5.5V or GND

V

I=VCC

or GND

One Input at 3.4V,
other input at V

5.5

CC

or GND

74V2T00

-40 to 85°C -55 to 125°C

0.8 0.8 0.8 V

± 0.1 ± 1.0 ± 1.0 µA

11020µA

1.35 1.5 1.5 mA

Unit

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

Test Condition Value

Symbol Parameter

t
t

(*) Voltage range is5.0V ± 0.5V

Propagation Delay

PLH

Time

PHL

T

V

CC

(V)

C

(pF)

L

A

Min. Typ. Max. Min. Max. Min. Max.

5.0 (*) 15 5.0 7.0 1.0 8.0 1.0 8.0

5.0 (*) 50 5.5 8.0 1.0 9.0 1.0 9.0

-40 to 85°C -55 to 125°C

Unit

ns

= 25°C

CAPACITANCE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance

410 10 10pF

10.5 pF

(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average current can be obtained by the following equation. I

CC(opr)=CPDxVCCxfIN+ICC

-40 to 85°C -55 to 125°C

/2

Unit

3/7