ST 74V2GU04 User Manual

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74V2GU04

TRIPLE INVERTER (SINGLE STAGE)

■ HIGH SPEED: t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) atTA=25°C

CC

■ HIGH NOISE IMMUNITY:

V

NIH=VNIL

■ POWER DOWN PROTECTION ON INPUT

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=8mA(MIN)atVCC=4.5V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

■ OPERATING VOLTAGE RANG E:

V

(OPR) = 2V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

= 10% VCC(MIN.)

PHL

= 3.5ns (TYP.) at VCC=5V

PD

DESCRIPTION

The 74V2GU04 is an advanced high-speed
CMOS TRIPLE INVERTER (SINGLE STAGE)
fabricated with sub-micron silicon gate and
double-layer metal wiring C

2

MOS technology.
The internal circuit is composed of a single stages
inverter, then an unbuffered output.

SOT323-8LSOT23-8LSOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2GU04STR

It can be used in analog application such a crystal
oscillator.
Power down protection is provided on input and 0
to 7V can be accepted on input with no rega rd to
the supply voltage. This device can be used to
interface5Vto3V.

PIN CONNECTION AND IEC LOGIC SYMBOLS

1/7June 2003

74V2GU04

INPUT EQUIVALENT CIRCUIT PIN DESCRIPTION

PIN No SYMBOL NAME QND FUNCTION

1, 3, 6 1A, 2A, 3A Data Inputs
7, 5, 2 1Y, 2Y, 3Y Data Outputs

4 GND Ground (0V)
8

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

V

V

I

I

OK

I

I

or I

CC

T

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is
not implied.

Supply Voltage

CC

DC Input Voltage

I

DC Output Voltage -0.5 to VCC+ 0.5

O

DC Input Diode Current

IK

DC Output Diode Current
DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature

stg

Lead Temperature (10 sec)

L

V

CC

Positive Supply Voltage

AY

LH

HL

-0.5 to +7.0 V

-0.5 to +7.0 V
V

-20 mA

± 20 mA
± 25 mA
± 50 mA

-65 to +150 °C

260 °C

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

V
V
T

2/7

Supply Voltage

CC

Input Voltage

I

Output Voltage 0 to V

O

Operating Temperature

op

2 to 5.5 V
0 to 5.5 V

CC

-55 to 125 °C

V

DC SPECIFICATIONS

Symbol Parameter

V

V

V

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

Input Leakage

I

I

Current

I

Quiescent Supply

CC

Current

74V2GU04

Test Condition Value

= 25°C

T

V

CC

(V)

A

Min. Typ. Max. Min. Max. Min. Max.

2.0 1.7 1.7 1.7

3.0to

5.5

0.8V

CC

2.0 0.3 0.3 0.3

3.0to

5.5

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

0to

5.5

5.5

IO=-50 µA

=-50 µA

I

O

=-50 µA

I

O

=-4 mA

I

O

=-8 mA

I

O

IO=50 µA

=50 µA

I

O

=50 µA

I

O

=4 mA

I

O

=8 mA

I

O

= 5.5V or GND

V

I

V

I=VCC

or GND

1.8 2.0 1.8 1.8

2.7 3.0 2.7 2.7

4.0 4.5 4.0 4.0

2.58 2.48 2.4

3.94 3.8 3.7

0.2V

0.0 0.2 0.2 0.2

0.0 0.3 0.3 0.3

0.0 0.5 0.5 0.5

-40 to 85°C -55 to 125°C

CC

0.8V

CC

0.2V

CC

0.8V

CC

0.36 0.44 0.55

0.36 0.44 0.55

± 0.1 ± 1 ± 1 µA

11020µA

0.2V

CC

Unit

V

V

V

V

AC ELECTRICAL CHARACTERISTICS (Input t

r=tf

=3ns)

Test Condition Value

Symbol Parameter

t

PLHtPHL

(*) Voltage range is3.3V ± 0.3V
(**) Voltage range is 5.0V ± 0.5V

Propagation Delay
Time

V

3.3

3.3

5.0

5.0

T

C

CC

(V)

L

(pF)

(*)

15 4.4 6.5 1.0 8.0 1.0 9.0

(*)

50 4.8 7.0 1.0 9.0 1.0 10.0

(**)

15 3.5 5.5 1.0 6.0 1.0 7.5

(**)

50 4.1 6.0 1.0 7.0 1.0 8.0

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

Unit

ns

= 25°C

CAPACITIVE CHARACTERISTICS

Test Condition Value

= 25°C

Symbol Parameter

T

A

Min. Typ. Max. Min. Max. Min. Max.

C

C

Input Capacitance

IN

Power Dissipation

PD

Capacitance

510 10 10pF

10 pF

(note 1)

1) CPDis defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without
load. (Refer to Test Circuit). Average operating current can be obtained by the following equation. I

-40 to 85°C -55 to 125°C

CC(opr)=CPDxVCCxfIN+ICC

Unit

3/7