ST 74V2G32 User Manual

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74V2G32

DUAL 2-INPUT OR GATE

■ HIGH SPEED:t

■ LOW POWER DISSIPATION:

I

=1µA(MAX.) at TA=25°C

CC

■ HIGH NOISE IM MUNITY:

V

NIH=VNIL

■ POWER DOWN PROTECTION ON INPUTS

= 28% VCC(MIN.)

= 3.0ns (TYP.) at VCC=5V

PD

AND OUTPUTS

■ SYMMETRICAL OUTPUT IMPEDANCE:

|I

|=IOL=8mA(MIN)atVCC=4.5V

OH

II

|=IOL=4mA(MIN)atVCC=3.0V

OH

■ BALANCED PROPAGATION DELAYS:

t

≅ t

PLH

PHL

■ OPERATING VOLTAGE RANGE:

V

(OPR) = 2V to 5.5V

CC

■ IMPROVED LATCH-UP IMMUNITY

DESCRIPTION

The 74V2G32 is an advanced high-speed CMOS DUAL 2-INPUT OR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C

2

MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output.

SOT23-8L

ORDER CODES

PACKAGE T & R

SOT23-8L 74V2G32STR

Power down protection is provided on all inputs and outpu ts and 0 t o 7V can be accepted on inputs with no regard to the supply voltage. This device c an be used to interface 5V to 3V systems and it is ideal for portable applications like pers onal digital assistant, cam corder and all battery-powered equipment. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD immunity and transient e xcess voltage.

PIN CO NNE CTION AND IEC LOGIC SYMBOLS

1/8March 2004

74V2G32

INPUT EQUIVALENT CIRCUIT PIN DES CRIPTION

PIN N° SYMBOL NAME QND FUNCTION

1, 5 1A, 2A Data Input 2, 6 1B, 2B Data Input 7, 3 1Y, 2Y Data Output

4 GND Ground (0V) 8

TRUTH TABLE

nA nB nY

LLL

LHH HLH HHH

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CC

V V V

I

IK

I

OK

I

or I

CC

T

stg

T

Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied.

1) VCC=0V

2) Highor Low State

Supply Voltage DC Input Voltage

I

DC Output Voltage (see note 1)

O

DC Output Voltage (see note 2) -0.5 to VCC+0.5

O

DC Input Diode Current DC Output Diode Current DC Output Current

O

DC VCCor Ground Current

GND

Storage Temperature Lead Temperature (10 sec)

L

V

CC

Positive Supply Voltage

-0.5 to +7.0 V

− 20 mA

− 20 mA ± 25 mA ± 50 mA

-65 to +150 °C 260 °C

V

RECOMMENDED OPERATING CONDITIONS

Symbol Parameter Value Unit

V

CC

V V V T

dt/dv

1) VCC=0V

2) Highor Low State from30% to 70% ofV

3) V

IN

2/8

Supply Voltage Input Voltage

I

Output Voltage (see note 1) 0 to 5.5

O

Output Voltage (see note 2) 0 to V

O

Operating Temperature

op

Input Rise and Fall Time (note 3) (V

CC

(V

=5.0± 0.5V)

CC

=3.3± 0.3V)

2to5.5 V 0to5.5 V

CC

-55 to 125 °C 0 to 100

0to20

V V

ns/V ns/V

DC SPECIFICATIONS

Symbol Parameter

V

I

High Level Input

IH

Voltage

V

Low Level Input

IL

Voltage

High Level Output

OH

Voltage

Low Level Output

OL

Voltage

I

Input Leakage

I

Current

I

Quiescent Supply

CC

Current Power downOutput

OPD

Leakage Current

Test Condition Value

V

(V)

CC

= 25°C

A

Min. Typ. Max. Min. Max. Min. Max.

-40 to 85°C -55 to 125°C

T

2.0 1.5 1.5 1.5

3.0to

5.5

0.7V

CC

0.7V

CC

0.7V

CC

2.0 0.5 0.5 0.5

3.0to

5.5

2.0

3.0

4.5

3.0

4.5

2.0

3.0

4.5

3.0

4.5

0to

5.5

0

IO=-50 µA

=-50 µA

I

O

I

=-50 µA

O

=-4 mA

I

O

=-8 mA

I

O

IO=50 µA I

=50 µA

O

=50 µA

I

O

=4 mA

I

O

=8 mA

I

O

VI=5.5VorGND

V

O

or GND

=5.5

V

I=VCC

1.9 2.0 1.9 1.9

2.9 3.0 2.9 2.9

4.4 4.5 4.4 4.4

2.58 2.48 2.4

3.94 3.8 3.7

0.3V

CC

0.3V

CC

0.0 0.1 0.1 0.1

0.36 0.44 0.55

± 0.1 ± 1 ± 1 µA

11020µA

0.5 5 10 µA

74V2G32

Unit

0.3V

CC

V

AC ELECTRICAL CHARACTERISTICS (Input t

Test Condition Value

Symbol Parameter

t

PLHtPHL

(*) Voltage range is 3.3V± 0.3V (**) Voltage range is 5.0V ± 0.5V

Propagation Delay Time

V

3.3

5.0

C

CC

(V)

L

(pF)

(*)

15 3.7 7.0 1.0 8.0 1.0 9.0

(*)

50 5.3 8.0 1.0 9.5 1.0 10.5

(**)

15 3.0 5.0 1.0 6.0 1.0 7.0

(**)

50 4.1 6.5 1.0 7.5 1.0 8.5

=3ns)

r=tf

= 25°C

T

A

-40 to 85°C -55 to 125°C

Min. Typ. Max. Min. Max. Min. Max.

Unit

ns

3/8